Results 211 to 220 of about 18,620 (232)

Worst case analysis of low-voltage analog MOS integrated circuits

38th Midwest Symposium on Circuits and Systems. Proceedings, 2002
A methodology for worst case analysis of low voltage analog MOS integrated circuits is presented. It relates parameter to current mismatch in a transistor pair analytically and the current mismatch is regarded as a random variable. It is shown that the algorithm is efficient and is readily extended to the circuit level. The effect of the active area of
null Hing-Yan To, C. Michael, M. Ismail
openaire   +1 more source

Application of a statistical design methodology to low voltage analog MOS integrated circuits

2000 IEEE International Symposium on Circuits and Systems. Emerging Technologies for the 21st Century. Proceedings (IEEE Cat No.00CH36353), 2002
The statistical design of the four-MOSFET structure and the 10-bit current division network is presented in this paper. The quantitative measure of the effect of mismatch between the transistors in both circuits is provided. Optimization of transistor W and L values, and yield enhancement are demonstrated.
T.B. Tarim, M. Ismail
openaire   +1 more source

A method to predict harmonic distortion in small-geometry MOS analog integrated circuits

IEEE Journal of Solid-State Circuits, 1987
A method to predict the small-signal linear gain and level of harmonic distortion in analog MOS circuits is presented. This method, based on a generalized nonlinear transfer function approach, lends itself to implementation in the AC small-signal analysis routine of the circuit simulation program SPICE.
M.J. Thoma, W.T. Baumann, C.R. Westgate
openaire   +1 more source

SCMOS: a software tool for studying the behavior of analog MOS integrated circuits

31st Annual Frontiers in Education Conference. Impact on Engineering and Science Education. Conference Proceedings (Cat. No.01CH37193), 2002
The study of analog integrated circuits can be carried out at several levels, from the structure and operation of their basic building blocks to the design methodologies. At any of these levels there is a need for tools that allow the influence of design parameters in the behavior of the circuits to be clearly shown to the students. This paper presents
J. Farina, J.J. Rodriguez-Andina, L.G. Sanmartin   +2 more
openaire   +1 more source

MOS Devices for Linear Analog Integrated Circuits

1989
Most monolithic integrated circuits can be classified into three large groups: silicon bipolar circuits based on bipolar transistors [1], MOS (metal-oxide-semiconductor) circuits which use MOS field-effect transistors as the basic active elements [1–10] and GaAs (Gallium-Arsenide) circuits employing GaAs transistors [63, 64].*
Rolf Unbehauen, Andrzej Cichocki
openaire   +1 more source

Bipolar and MOS Analog Integrated Circuit Design

Electronics and Power, 1985
openaire   +2 more sources

An integrated approach to realistic worst-case design optimization of MOS analog circuits

[1992] Proceedings 29th ACM/IEEE Design Automation Conference, 2003
A. Dharchoudhury, S.M. Kang
openaire   +1 more source

Analog MOS Integrated Circuits, II

2009
Paul R. Gray, Bruce A. Wooley, Robert W. Brodersen   +2 more
openaire   +1 more source

An MOS transistor model for analog circuit design

IEEE Journal of Solid-State Circuits, 1998
Marcio Medeiros, Carlos Galup-Montoro
exaly  

A SUBTHRESHOLD ANALOG MOS CIRCUIT FOR LOTKA–VOLTERRA CHAOTIC OSCILLATOR

International Journal of Bifurcation and Chaos in Applied Sciences and Engineering, 2006
Tetsuya Hirose
exaly