Results 71 to 80 of about 9,648 (308)

Selective Charge Injection via Topological van der Waals Contacts for Barrier‐Free p‐Type TMD Transistors

open access: yesAdvanced Functional Materials, EarlyView.
 Topological van der Waals contacts represent a new class of electrodes for 2D semiconductors, enabling precise control of the Schottky barrier height (SBH) and contact resistance (RC) through interlayer distance and orbital hybridization engineering. In Se‐based transition metal dichalcogenides, these contacts achieve an ultralow SBH of 7 meV, RC of 0.
Soheil Ghods   +15 more
wiley   +1 more source

Photodissociation dynamics of the NH molecule under intense VUV pulses

open access: yesPhysical Review Research, 2020
Photodissociation dynamics of the NH molecule excited from the triplet ground X^{3}Σ^{−} to 2^{3}Π state by resonant intense VUV pulses have been comprehensively investigated by the recently proposed theoretical treatment involving the electron-rotation ...
Yan Rong Liu   +5 more
doaj   +1 more source

Mesoporous Carbon Thin Films with Large Mesopores as Model Material for Electrochemical Applications

open access: yesAdvanced Functional Materials, EarlyView.
Mesoporous carbon thin films possessing 70 nm mesopores are prepared on titanium substrates by soft templating of resol resins with a self‐synthesized poly(ethylene oxide)‐block‐poly(hexyl acrylate) block copolymer. A strategy to avoid corrosion of the metal substrate is presented, and the films are extensively characterized in terms of morphology ...
Lysander Q. Wagner   +9 more
wiley   +1 more source

Chirality-induced orbital Edelstein effect in an analytically solvable model

open access: yesPhysical Review Research
Chirality-induced spin selectivity (CISS), a phenomenon wherein chiral structures selectively determine the spin polarization of electron currents flowing through the material, has garnered significant attention due to its potential applications in areas
Börge Göbel   +2 more
doaj   +1 more source

Aharonov–Bohm-type effect in the background of a distortion of a vertical line into a vertical spiral

open access: yesEuropean Physical Journal C: Particles and Fields, 2019
It is analysed Aharonov–Bohm-type effects when a spinless quantum particle is in an elastic medium with the distortion of a vertical line into a vertical spiral.
W. C. F. da Silva, K. Bakke
doaj   +1 more source

Coexisting Rashba/Dresselhaus Spin Splitting in Solution‐Processed Bournonite Films Using Circular Photogalvanic Effect

open access: yesAdvanced Functional Materials, EarlyView.
Circular photogalvanic effect measurements and first‐principles calculations reveal spin‐splitting states in solution‐processed bournonite films (CuPbSbS3) due to structural and bulk inversion asymmetry. The results provide experimental confirmation of coexisting Rashba and Dresselhaus spin‐splitting states in this non‐centrosymmetric chalcogenide ...
Aeron McConnell   +5 more
wiley   +1 more source

Effect of Rotation on Double-Diffusive Convection in a Magnetized Ferrofluid with Internal Angular Momentum

open access: yesJournal of Applied Fluid Mechanics, 2011
This paper deals with the theoretical investigation of the effect of rotation in a magnetized ferrofluid with internal angular momentum, heated and soluted from below subjected to a transverse uniform magnetic field.
Sunil Kumar   +3 more
doaj  

Electron–Matter Interactions During Electron Beam Nanopatterning

open access: yesAdvanced Functional Materials, EarlyView.
This article reviews the electron–matter interactions important to nanopatterning with electron beam lithography (EBL). Electron–matter interactions, including secondary electron generation routes, polymer radiolysis, and electron beam induced charging, are discussed.
Camila Faccini de Lima   +2 more
wiley   +1 more source

In Materia Shaping of Randomness with a Standard Complementary Metal‐Oxide‐Semiconductor Transistor for Task‐Adaptive Entropy Generation

open access: yesAdvanced Functional Materials, EarlyView.
This study establishes a materials‐driven framework for entropy generation within standard CMOS technology. By electrically rebalancing gate‐oxide traps and Si‐channel defects in foundry‐fabricated FDSOI transistors, the work realizes in‐materia control of temporal correlation – achieving task adaptive entropy optimization for reinforcement learning ...
Been Kwak   +14 more
wiley   +1 more source

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