Results 141 to 150 of about 2,129 (176)
Some of the next articles are maybe not open access.
Superconducting indium antimonide
Physics Letters, 1966Abstract The superconducting transition temperature in quenced metallic indium antimonide depends on the treating pressure and temperature. It increases from 1.6°K to 5.1°K with increasing pressure and decreasing temperature. It is associated with the density of states of electrons.
S. Minomura +3 more
openaire +1 more source
Solid-State Electronics, 1961
The design, fabrication, and electrical characteristics of an n-p-n indium antimonide transistor which operates at 77°K are discussed. An analysis of the expected high-frequency performance is presented and a comparison made to a p-n-p germanium transistor.
openaire +1 more source
The design, fabrication, and electrical characteristics of an n-p-n indium antimonide transistor which operates at 77°K are discussed. An analysis of the expected high-frequency performance is presented and a comparison made to a p-n-p germanium transistor.
openaire +1 more source
Acta Physica Academiae Scientiarum Hungaricae, 1981
Semiconductor AIII−BV ternary and quaternary antimonides are useful materials for optoelectronic and microelectronic applications. Only a few members of possible combinations were prepared, mostly as epitaxial layers grown onto a binary or ternary AIII−BV compound.
openaire +1 more source
Semiconductor AIII−BV ternary and quaternary antimonides are useful materials for optoelectronic and microelectronic applications. Only a few members of possible combinations were prepared, mostly as epitaxial layers grown onto a binary or ternary AIII−BV compound.
openaire +1 more source
Berry phase appearance in deformed indium antimonide and gallium antimonide whiskers
Computational Problems of Electrical Engineering, 2019The influence of deformation on magnetoresistance features in indium antimonide and gallium antimonide whiskers of n-type conductivity with different doping concentration in the vicinity to the metal-insulator transition (MIT) has been investigated in the temperature range 4.2 – 50 K and the magnetic field 0 – 14 T.
Anatoliy Druzhynin +3 more
openaire +1 more source
1999
Indium antimonide (InSb) has the smallest band gap of any of the III–V semiconductors (E o∼0.18 eV at 300 K, Ref. [1]). InSb is, thus, an interesting semiconductor for use in long-wavelength optoelectronic device applications. Its relatively high electron mobility (μn∼7×104 cm2/V-s at 300 K, Ref.
openaire +1 more source
Indium antimonide (InSb) has the smallest band gap of any of the III–V semiconductors (E o∼0.18 eV at 300 K, Ref. [1]). InSb is, thus, an interesting semiconductor for use in long-wavelength optoelectronic device applications. Its relatively high electron mobility (μn∼7×104 cm2/V-s at 300 K, Ref.
openaire +1 more source
Antimonide based avalanche photodiodes
Infrared Technology and Applications XLVII, 2021There is a lot of interest in developing low noise avalanche photodiodes (APDs) in the short wave infrared (1.5-3 microns) and mid-wave infrared (3-5 microns). State of the art APDs are are based on based on interband transitions in mercury cadmium telluride (MCT, HgCdTe) with large multiplication gains and low excess noise factors due to the favorable
openaire +1 more source
Superconductivity in Indium Antimonide
Physical Review, 1964Two samples of the metallic phase of indium antimonide were stabilized at atmospheric pressure by cooling semiconductor grade material from 100\ifmmode^\circ\else\textdegree\fi{}C to 77\ifmmode^\circ\else\textdegree\fi{}K at a pressure of 27 kbars, and then removing the pressure. Measurements of the magnetic moment of these samples down to 1.1\ifmmode^\
T. F. Stromberg, C. A. Swenson
openaire +1 more source
Rubidium Indium Antimonide, Rb2In2Sb3
Acta Crystallographica Section C Crystal Structure Communications, 1996The stricture of dirubidium diindium triantimonide, a layered material isotypic with A 2 In 2 Sb 3 (A = Na, K, Cs), is reported.
O. Gourdon +5 more
openaire +1 more source
1999
Gallium antimonide (GaSb) is a semiconductor of the group III–V compounds. Its lattice has the zinc-blende structure; the melting point of the compound is 985 K [1]. GaSb and its lattice-matched alloy systems AlGaAsSb and InGaAsSb have been employed in various optoelectronic and electron devices, such as lasers, photode-tectors, and heterojunction ...
openaire +1 more source
Gallium antimonide (GaSb) is a semiconductor of the group III–V compounds. Its lattice has the zinc-blende structure; the melting point of the compound is 985 K [1]. GaSb and its lattice-matched alloy systems AlGaAsSb and InGaAsSb have been employed in various optoelectronic and electron devices, such as lasers, photode-tectors, and heterojunction ...
openaire +1 more source
Superconductivity of Metallic Aluminum Antimonide
Science, 1967The high-pressure metallic phase of aluminum antimonide is superconducting [critical temperature T c (P ∼125 kilobars) = 2.8° ± 0.2°K]. This transition temperature is significantly lower than the transition temperature of metallic germanium under an equivalent high pressure.
openaire +2 more sources