Results 101 to 110 of about 1,421 (148)
Electronic structure of antistructure defects in FeAl
Journal of Physics: Condensed Matter, 1992 With the aid of the defect-specified supercells used within the framework of the linear-muffin-tin-orbital (LMTO) method, the familiar difficulties in calculating the anti-structure (AS) defects in FeAl can be overcome. The calculations are based on the spin-dependent version of the Hohenberg-Kohn-Sham scheme.
Y. M. Gu, L. Fritsche
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Deviations from the one-defect approximation: antistructure in III-V compounds
Journal of Physics C: Solid State Physics, 1984 In III-V semiconductors a common mode of vacancy migration is by nearest-neighbour hopping. In the presence of Zn diffusion this mode is greatly enhanced. A consequence is the production of antisite defects, which usually become antistructure pairs as the vacancy returns to its original sublattice.
J. A. Van Vechten
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Musical expectancy in atonal contexts: Musicians’ perception of “antistructure”
Psychology of Music, 2012 Two exploratory studies examine how 12-tone rows are processed cognitively. Tone-rows use each pitch-class once, and were devised by the composer Arnold Schoenberg as a way of structuring music in the absence of tonality, an approach subsequently known as “serialism”.
Adam Ockelford, Desmond Sergeant
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Antistructure: Counterpoints to Pedagogy of the Burro
, 2012 Following their ritual performance of protest, another transition was about to take place as las madres quieted their voices and returned to their daily routines. The school community shifted uneasily to a less stable state, neither “here” nor “there,” as the mothers introduced their new “selves” to administrators, staff, and the families. Prior to the
Nathalia E. Jaramillo
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Structure/Antistructure and Agency under Oppression
Journal of Philosophy, 1990 Maria C. Lugones
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Enthalpy of formation of antisite defects and antistructure pairs in III-V compound semiconductors
Journal of Applied Physics, 1989 A formulation for estimating the enthalpy of formation of neutral, isolated antisite defects in III-V compound semiconductors is presented, in which it is assumed that the formation enthalpy is comprised of disorder and electronic contributions. The disorder contribution was previously calculated by Van Vechten [J. Electrochem. Soc.
T. W. Dobson, John F. Wager
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Bashō as Bat: Wayfaring and Antistructure in the Journals of Matsuo Bashō
The Journal of Asian Studies, 1990 The japanese writer Matsuo Bashō (1644–94) is known in the West primarily as a haiku poet. But he was also a master of Japanese prose, bothhaibun(short pieces of poetic prose) andkikō(travel literature). It is in his prose, particularly his travel journals, that Bashō portrays a vision and a way of life that is profoundly religious.
David Landis Barnhill
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Evidence for the existence of antistructure defects in bismuth telluride by density measurements
Journal of Physics and Chemistry of Solids, 1965 Gerald R. Miller, Che‐Yu Li
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Theoretical Study of Antistructure Defects in GaAs
Materials Science Forum, 1997 Anderson Janotti +3 more
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