Results 181 to 190 of about 166,743 (295)

Light‐Programmable Interfaces: From Molecular Photoswitching to Adaptive Membrane Separations

open access: yesAdvanced Materials Interfaces, EarlyView.
This review advances an interface‐centered framework for light‐responsive membranes, linking molecular photoswitches (azobenzene (AZO), spiropyran (SP), diarylethene (DAE), donor–acceptor Stenhouse adducts (DASA), photoacid) to integration strategies in polymeric, porous, self‐assembled, and mixed‐matrix systems.
Liangliang Zhang   +6 more
wiley   +1 more source

Microwave Absorption for Detection of Dirac Fermions in SnTe Films

open access: yesAdvanced Materials Interfaces, EarlyView.
Microwave absorption can detect Dirac fermions in samples exposed to the atmosphere. Results showed that although topological surface states are robust against environmental degradation, they are not detectable by electrical transport measurements. Hence, microwave absorption can detect Dirac fermions even in samples whose surfaces have deteriorated ...
Wellington P. do Prado   +8 more
wiley   +1 more source

Non‐Continuous Iridescent Variable Structural Color Based on Metallic Surface Periodic Structures

open access: yesAdvanced Materials Interfaces, EarlyView.
This study presents an ink‐free laser nanofabrication technique that generates periodic arched microstructures on titanium surfaces, achieving non‐continuous iridescent dual‐color switching. The ridge and side flanks of these structures possess distinct oxide film thicknesses, enabling angle‐dependent selective reflection of specific wavelengths.
XiangWei Liu   +3 more
wiley   +1 more source

Extreme optical nonlinearities unveiled by ultrafast laser filamentation in semiconductors. [PDF]

open access: yesNat Commun
Chambonneau M   +5 more
europepmc   +1 more source

Mechanical Stress Evolution in Polycrystalline Ge Thin Films Under MeV Ion Irradiation

open access: yesAdvanced Materials Interfaces, EarlyView.
Irradiation of polycrystalline Ge thin films with 1.8 MeV Au ions alters residual stress through defect generation and lattice expansion. Increasing fluence drives progressive lattice disorder and eventual amorphization. Polycrystalline Ge resists amorphization longer than crystalline Ge, as grain boundaries facilitate defect diffusion, significantly ...
Karla J. Paz Corrales   +10 more
wiley   +1 more source

Quantum state revival via coherent energy redistribution. [PDF]

open access: yesSci Adv
Crockett B   +8 more
europepmc   +1 more source

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