Results 181 to 190 of about 6,879 (260)
Al─N Co‐Doped LLZO Solid Electrolytes via One‐Step Sintering: Toward High Ionic Conductivity
Advanced Science, EarlyView.Al–N co‐doped LLZO solid electrolytes were prepared via a one‐step sintering process, which not only simplifies fabrication process, but also diminishes Li loss during high‐temperature sintering in conventional fabrication process. The Al–N co‐doped LLZO achieves a high ionic conductivity of 2.19 × 10−3 S cm−1 because the co‐doping reduces the energy ...
Hao Zhang +9 more
wiley +1 more source
Advanced Science, EarlyView.The electrolyte engineering of introducing tetrakis(4‐N, N‐dimethylaminophenyl)porphyrin (TDMAP) is designed to modulate Li+ solvation structure and solid electrolyte interphase, where the interaction with PF₆− anions is altered (Li+–NMe2–PF₆−). Consequently, the cells with optimal additive concentration achieve high Coulombic efficiency (∼99%), and ...
Pooria Afzali +5 more
wiley +1 more source
Advanced Electronic Materials, EarlyView.A lead‐free perovskite memristive solar cell structure that call emulate both synaptic and neuronal functions controlled by light and electric fields depending on top electrode type. ABSTRACT Memristive devices based on halide perovskites hold strong promise to provide energy‐efficient systems for the Internet of Things (IoT); however, lead (Pb ...
Michalis Loizos +4 more
wiley +1 more source
PRODUKSI GAS HIDROGEN DENGAN METODE LOGAM DIREAKSIKAN DENGAN ASAM ARRHENIUS [PDF]
, 2020 Elsima Nainggolan +3 more
openalex
Aging and Electrical Stability of DNTT Honey‐Gated OFETs
Advanced Electronic Materials, EarlyView.DNTT honey‐gated organic transistors were fabricated and evaluated to assess short‐ and long‐term stability under electrical stress and aging. Short‐term transfer measurements (five days, 40 sweeps/day) showed minimal parameter shift, while extended measurements revealed gradual degradation over weeks.
Douglas H. Vieira +8 more
wiley +1 more source
Silicon Nitride Resistive Memories
Advanced Electronic Materials, EarlyView.Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis +7 more
wiley +1 more source
Discovery of an Ideal HgO12 Icosahedron and Magnetodielectric Coupling in HgCu3Ti4O12
Advanced Electronic Materials, EarlyView.HgCu3Ti4O12, an A‐site‐ordered quadruple perovskite with a perfectly regular HgO12 coordination, has been synthesized for the first time using high‐pressure methods. The material shows antiferromagnetic ordering at 31 K together with an intrinsic dielectric anomaly, implying possible magnetodielectric coupling.
Haoyu Zheng +19 more
wiley +1 more source
Advancing Energy Materials by In Situ Atomic Scale Methods
Advanced Energy Materials, Volume 15, Issue 11, March 18, 2025.Progress in in situ atomic scale methods leads to an improved understanding of new and advanced energy materials, where a local understanding of complex, inhomogeneous systems or interfaces down to the atomic scale and quantum level is required. Topics from photovoltaics, dissipation losses, phase transitions, and chemical energy conversion are ...
Christian Jooss +21 more
wiley +1 more source