Results 101 to 110 of about 2,940,124 (309)

1978-1979b 54 [PDF]

open access: yes, 1978
1 scrapbook: 96 pagesScrapbook compiled by the Delaware Art Museum for June 1978 through June ...
Delaware Art Museum
core  

All‐in‐One Analog AI Hardware: On‐Chip Training and Inference with Conductive‐Metal‐Oxide/HfOx ReRAM Devices

open access: yesAdvanced Functional Materials, EarlyView.
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone   +11 more
wiley   +1 more source

1978-1979b 56 [PDF]

open access: yes, 1978
1 scrapbook: 96 pagesScrapbook compiled by the Delaware Art Museum for June 1978 through June ...
Delaware Art Museum
core  

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

open access: yesAdvanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner   +14 more
wiley   +1 more source

1978-1979b 62 [PDF]

open access: yes, 1978
1 scrapbook: 96 pagesScrapbook compiled by the Delaware Art Museum for June 1978 through June ...
Delaware Art Museum
core  

Work-life balance

open access: yesNew Zealand Medical Student Journal
doesn’t it? It sounds like a simple problem of maths: if there are 𝑥 hours in a day and Doctor A spends 𝑥 hours at work, how many hours are left over for Doctor A to live their life?
Art Nahill
doaj   +1 more source

Oxygen‐Tunnel Indium Tin Oxide Vertical Channel Transistors with Enhanced Current Density and Reliability for Monolithic 3D Compute‐In‐Memory Systems

open access: yesAdvanced Functional Materials, EarlyView.
Oxygen‐tunnel (OT) indium tin oxide (ITO) vertical channel transistors (VCTs) enable reliable, high‐density gain‐cell memory for monolithic 3D integration. A sandwiched SiN/SiO2/SiN OT stack selectively regulates oxygen transport, suppressing parasitic electrode oxidation while stabilizing channel oxygen vacancies, thereby suppressing carrier injection
Hyeonho Gu   +17 more
wiley   +1 more source

1978-1979b 67 [PDF]

open access: yes, 1978
1 scrapbook: 96 pagesScrapbook compiled by the Delaware Art Museum for June 1978 through June ...
Delaware Art Museum
core  

Irradiation‐Induced Spin Bath Evolution and as‐Grown Hydrogen Defects in CVD Diamond Revealed by NV‐Based DEER Spectroscopy

open access: yesAdvanced Functional Materials, EarlyView.
Here, we provide the reader with the current state of the art in the fabrication of high‐T2‐coherence diamond, optimized through the use of double electron–electron resonance (DEER) spectroscopy. We reveal the main as well as yet unidentified spin defects, the reduction of which is essential for reducing the spin bath and fabricating materials for ...
Olga Rubinas   +6 more
wiley   +1 more source

1978-1979b 69 [PDF]

open access: yes, 1978
1 scrapbook: 96 pagesScrapbook compiled by the Delaware Art Museum for June 1978 through June ...
Delaware Art Museum
core  

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