Results 161 to 170 of about 76,792 (271)
5 nm HfO2 memristors exhibit a fully reversible, voltage‐controlled transition between filamentary and interfacial switching within the same device. At high voltages, a filament forms and dominates the conduction, whereas at lower voltages the device reversibly returns to interfacial mode without defect accumulation, implying a new reversible ...
Cuo Wu +8 more
wiley +1 more source
Versatile optoelectronic memristor based on wide-bandgap Ga<sub>2</sub>O<sub>3</sub> for artificial synapses and neuromorphic computing. [PDF]
Cui D +12 more
europepmc +1 more source
WO3${\rm WO}_3$ based resistive switching device was precisely controlled and shows the reconfigurable, non‐volatile switching which can be programmable to multi‐resistance states for memory applications. The memory device can also be utilised for low energy neuromorphic application.
Keval Hadiyal +2 more
wiley +1 more source
Selective UV Sensing for Energy-Efficient UV-A Artificial Synapses Using a ZnO/ZnGa<sub>2</sub>O<sub>4</sub> Heterojunction Diode. [PDF]
Khan T +5 more
europepmc +1 more source
A lead‐free perovskite memristive solar cell structure that call emulate both synaptic and neuronal functions controlled by light and electric fields depending on top electrode type. ABSTRACT Memristive devices based on halide perovskites hold strong promise to provide energy‐efficient systems for the Internet of Things (IoT); however, lead (Pb ...
Michalis Loizos +4 more
wiley +1 more source
Triboelectric nanogenerators are vital for sustainable energy in future technologies such as wearables, implants, AI, ML, sensors and medical systems. This review highlights improved TENG neuromorphic devices with higher energy output, better stability, reduced power demands, scalable designs and lower costs.
Ruthran Rameshkumar +2 more
wiley +1 more source
Highly Promising 2D/1D BP-C/CNT Bionic Opto-Olfactory Co-Sensory Artificial Synapses for Multisensory Integration. [PDF]
Dong L +9 more
europepmc +1 more source
Designing Memristive Materials for Artificial Dynamic Intelligence
Key characteristics required of memristors for realizing next‐generation computing, along with modeling approaches employed to analyze their underlying mechanisms. These modeling techniques span from the atomic scale to the array scale and cover temporal scales ranging from picoseconds to microseconds. Hardware architectures inspired by neural networks
Youngmin Kim, Ho Won Jang
wiley +1 more source
Domain wall magnetic tunnel junction-based artificial synapses and neurons for all-spin neuromorphic hardware. [PDF]
Liu L +16 more
europepmc +1 more source
Flexible Memory: Progress, Challenges, and Opportunities
Flexible memory technology is crucial for flexible electronics integration. This review covers its historical evolution, evaluates rigid systems, proposes a flexible memory framework based on multiple mechanisms, stresses material design's role, presents a coupling model for performance optimization, and points out future directions.
Ruizhi Yuan +5 more
wiley +1 more source

