Results 111 to 120 of about 9,507,269 (226)

Learning Gain and User Experience of AI Avatar-Based and Human-Presented Explainer Videos: Prospective Randomized Crossover Feasibility Study. [PDF]

JMIR Form Res
Reichert M, Jungmann T, von Jan U, Albrecht UV.   +3 more
europepmc   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Advanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme   +19 more
wiley   +1 more source

AI-related measures and self-reported lesson-aim attainment: an explainable machine-learning analysis of TALIS 2024. [PDF]

Front Public Health
Mao Z.
europepmc   +1 more source

Artificial Regressions [PDF]

Associated with every popular nonlinear estimation method is at least one "artificial" linear regression. We define an artificial regression in terms of three conditions that it must satisfy.
Russell Davidson, James G. MacKinnon
core  

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

Advanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee, Sofía Cruces, Xiaohua Liu, Yang Chen, Vasilis A. Maroufidis, Janghyun Jo, Lukas Völkel, Dennis Braun, Michael Möller, Leon Brackmann, Holger Kalisch, Michael Heuken, Andrei Vescan, Rafal E. Dunin‐Borkowski, Joachim Mayer, Stefan Wiefels, Max C. Lemme   +16 more
wiley   +1 more source

Scaffolded AI-Supported Problem-Based Learning for Medical Interns: Exploratory Retrospectively Registered Randomized Controlled Evaluation With a Voluntary Feasibility Follow-Up. [PDF]

JMIR Med Educ
Zhao Z, Wu B, Tian S, Hu H, Hao P.
europepmc   +1 more source

Demonstration; Drawbar Test; Waterloo Boy

, 1956
Demonstration at the Tractor Test Lab. This Waterloo Boy's manufacturer was bought later by John Deere. "Waterloo Boy by John Deere on kerosene was the first tractor tested at the University of Nebraska in 1920." The Waterloo Boy tractor is shown on the ...
Nebraska Tractor Test Laboratory
core  

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

Advanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner, Dhananjeya Kumaar, Giacomo Torti, Killian Keller, Till Zellweger, Florian M. Schenk, Christoph Weilenmann, Daniel Chelladurai, Vara Prasad Jonnalagadda, Ghazi Sarwat Syed, Vanessa Wood, Jürg Leuthold, Alexandros Emboras, Maksym Yarema, Mathieu Luisier   +14 more
wiley   +1 more source

Short-term factual recall, presence, and visio-vestibular discomfort in a 360° augmented-virtuality classroom environment: A feasibility study. [PDF]

PLoS One
Carrasco KD, Escarzaga AM, Gonzalez M, Rosenfelder A, Beltran N, Ford C, Miguel K, Scott LCA, Carrasco A.   +8 more
europepmc   +1 more source

Achieving High ON State Current through Ferroelectric Polarization‐Dependent Interfacial Resistance Switching in Undoped Orthorhombic HfO2 Films

Advanced Functional Materials, EarlyView.
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand, Nuno Estrócio, Ji S. Kim, Babak Bakhit, Marian C. Istrate, Corneliu Ghica, Tiago Rebelo, Nives Strkalj, Abin Varghese, Bernardo Almeida, Luís S. Marques, Bipin Rajendran, Judith L. MacManus‐Driscoll, José P. B. Silva   +13 more
wiley   +1 more source