Engineering asymmetric solvation structures for synergistically boosted quasi-solid thermocells. [PDF]
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Design Guidelines for Anode Modifications to Eliminate Soft Short Circuits in Anode-Free Na Batteries Under High Current Density With Large-Capacity Plating, Demonstrated via Initiated Chemical Vapor Deposition (iCVD). [PDF]
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Low-Temperature Melting-Crystallization Transition in Perovskites With Self-Trapped Excitons for Photovoltaic Downconversion. [PDF]
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Soret Effect-Based Ionic Thermoelectric Converters: Principles, Device Physics, and Applications. [PDF]
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Short-Circuit Capability Prediction and Failure Mode of Asymmetric and Double Trench SiC MOSFETs
IEEE Transactions on Power Electronics, 2021In this article, short-circuit capability prediction and failure mode of 1200-V-class SiC MOSFET s with a double and asymmetric trench structure are proposed under single-pulse short-circuit stress. A short-circuit prediction model is established to evaluate short-circuit withstand time and corresponding critical energy of devices under various dc bus
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AbstractA trade‐off between open‐circuit voltage (V OC) and high short‐circuit (J SC) becomes one of the most vital problems limiting further improvement in polymer solar cells' (PSCs) efficiency. In this work, two asymmetric polymer donors PBDT‐F‐2TC and PBDT‐SF‐2TC are designed and synthesized. When blended with a state‐of‐the‐art acceptor IT‐4F with
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Three-phase three-leg inverter is one of the most popular topologies for inverters. When short-circuit fault occurs, the inverter is generally switched to the current-controlled mode from voltage-controlled mode to limit the fault currents. In this situation, the inverter becomes equivalent to a symmetric, three-phase, positive sequence current source.
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Finite element analyses of short circuit forces in power transformers with asymmetric conditions
2008 IEEE International Symposium on Industrial Electronics, 2008Short circuit forces may be destructive in a power transformer. Therefore, accurate evaluation of such forces is essential during the design and manufacturing phase. Otherwise, overestimated values may result in oversized, and in general, non-optimal design. The analytical methods are usually fast and easy to apply.
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Single Pulse Short-Circuit Failure Mechanism of 1200V Asymmetric Trench SiC MOSFETs
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