Results 211 to 220 of about 134,760 (296)

High‐Power Terahertz Emission from Picosecond Nano‐Plasma Switching Driven by Secondary Electron Emission Avalanche

Advanced Science, EarlyView.
A nano‐plasma device enables watt‐level on‐chip THz generation through picosecond switching triggered by secondary electron emission avalanche. An ultra‐dense electron sheet initiates nano‐plasma formation within a ∼100 nm gap, driving rapid energy release into an integrated resonator.
Guangyu Sun, Mohammad Rezaei, Yuheng Hu, Guan‐Jun Zhang, Elison Matioli   +4 more
wiley   +1 more source

Comparison of scandium-based post-plasma chemical ionization approaches for elemental fluorine detection by nitrogen microwave-sustained inductively-coupled atmospheric-pressure plasma. [PDF]

Spectrochim Acta Part B At Spectrosc
Tanen JL, Jorabchi K.
europepmc   +1 more source

Rational Design of Broad‐Spectrum Anti‐Enteroviral Molecular Glues Targeting Enteroviral RNAi Suppressors

Advanced Science, EarlyView.
By leveraging this homodimerization mechanism, molecular glues were rationally designed to induce dysfunctional 3A dimerization, thereby restoring antiviral RNAi. The optimal molecular glue, VTP‐32, demonstrated potent and pan‐enterovirus (groups A, B, D) antiviral effects.
Yuan Fang, Xiong Xie, Huidi Fan, Botao Wu, An Wang, Wenhao Dai, Zezhong Liu, Jian Li, Huoyan Tong, Jianan Li, Yujie Ren, Jinlin Wang, Xi Zhou, Hong Liu   +13 more
wiley   +1 more source

Plasma Activate Nitrogen for Efficient Ammonia Synthesis: Plasma Ammonia Synthesis. [PDF]

Exploration (Beijing)
Zhang Y, Yu J, Wu H, Zhao Z, Xia H, Li Q, Wang Y, Li D, Wang Q.   +8 more
europepmc   +1 more source

Memristive Physical Reservoir Computing

Advanced Science, EarlyView.
Memristors’ nonlinear dynamics and input‐dependent memory effects make them ideal candidates for high‐performance physical reservoir computing (RC). Based on their conductance modulation, memristors can be classified as electronic or optoelectronic types.
Dian Jiao, Ziyuan Wang, Jingrui Wang, Li Zhang, Xianhua Wei, Lingxiang Hu, Zongxiao Li, Athanasios V. Vasilakos, Zhizhen Ye, Fei Zhuge   +9 more
wiley   +1 more source

Chemical Fingerprinting of Synthetic Polymers via Direct Insertion Probe Mass Spectrometry. [PDF]

Macromolecules
Nissinen VH, Heilala N, Grönlund K, Auvinen P, Suvanto M, Saarinen JJ, Jänis J.   +6 more
europepmc   +1 more source

Modeling and Verification of 1/f Noise Mechanisms in FAPbBr3 Single‐Crystal X‐Ray Detectors

Advanced Electronic Materials, EarlyView.
We demonstratethat surface‐trap‐induced carrier number fluctuations are the dominantmechanism in FAPbBr3 Schottky devices, a conclusion supported by thedistinct defect profiles revealed by Drive‐Level Capacitance Profiling (DLCP). Throughnoise contribution decomposition, it is found that the 1/f noise of thedetector is the key noise source affecting ...
Zhongyu Yang, Qingli Zhang, Yuting Liu, Binbin Liu, Zhiping Zheng, Guangda Niu, Ling Xu   +6 more
wiley   +1 more source

DFT study of atmospheric characteristics of CF₃SO₂F: the fungibility of the insulation gas of SF₆. [PDF]

RSC Adv
Liu W, Zheng Y, Cui Y, Li D, Yuan Q, Wang K, Cheng L.   +6 more
europepmc   +1 more source

High Mobility (>200 cm2 V−1 s−1) Transparent Top Gate IGZO TFTs with Oxidized Metal Gate Insulator for Enhanced Conductivity

Advanced Electronic Materials, EarlyView.
We demonstrate a top gate Nb capping TFT architecture that induces controlled oxygen out‐diffusion from the IGZO channel. This mechanism generates shallow donor states and enhances electron delocalization, enabling extended percolation pathways. The resulting thin‐film transistors exhibit high mobility, suppressed leakage currents, and strong optical ...
Hyeonjeong Sun, Yeoeun Yun, Kyubin Hwang, Jiyoung Bang, Seungmin Choi, Seungjae Lee, Taeyang Kim, Suhwon Choi, Eunsuk Choi, Jae Kyeong Jeong, Seung‐Beck Lee   +10 more
wiley   +1 more source

Observing elusive tetroxides in gas-phase radical reactions supports the Russell mechanism. [PDF]

Sci Adv
Nozière B, Patrick R.
europepmc   +1 more source