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Building a Rotary system for Atomic Layer Deposition (ALD)
2023My project is to construct a rotary reaction chamber for doing rotary atomic layer deposition (ALD). ALD is a technique that excels at creating uniform thin films and is typically used to deposit thin films on flat surfaces. However, the goal of this project is to deposit thin films on powdered materials. A rotary system would help the deposition.
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Pt-Ru Deposition Using ALD(Atomic Layer Deposition) for Methanol Oxidation Catalyst
ECS Meeting Abstracts, 2010Abstract not Available.
Seungbum Ha, Sanghoon Ji, Suk Won Cha
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Molybdenum diselenide formation using electrochemical atomic layer deposition (E-ALD)
Journal of Electroanalytical Chemistry, 2017Abstract Cyclic voltammetry (CV) of Au in MoO3 and SeO2 solutions was studied under both basic and acidic conditions, as a precursor to development of E-ALD cycle chemistry for the electrodeposition of MoSe2. Those results indicated that acidic H M o O 4 - and SeO2 precursor solutions would be a better choice for the formation of ...
Chu F. Tsang +2 more
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Atomic Layer Deposition (ALD) Processes for ULSI Manufacturing
2009Atomic layer deposition (ALD) is a technique where precursors are introduced alternatively, and a monolayer (or fraction thereof) is deposited on the surface at a time [1–4]. The sequential introduction of all precursors, separated by purge steps, completes an ALD cycle. Figure 14.1 illustrates the steps that comprise an ALD cycle.
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Atomic layer deposition (ALD): from precursors to thin film structures
Thin Solid Films, 2002The principles of the atomic layer deposition (ALD) method are presented emphasizing the importance of precursor and surface chemistry. With a proper adjustment of the experimental conditions, i.e. temperatures and pulsing times, the growth proceeds via saturative steps.
Markku Leskelä, Mikko Ritala
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Electrical properties of V2O5 thin films obtained by atomic layer deposition (ALD)
Journal of Materials Chemistry, 2004Dielectric and conductivity spectra of a V2O5 thin film were recorded in a broad frequency range 40–1.1 × 108 Hz at temperatures varying between 205 and 297 K. The V2O5 thin film (thickness 260 nm) was deposited on titanium substrate by atomic layer deposition (ALD). An annealing process at 500 °C in air was required to obtain crystallized V2O5.
Badot, Jean-Claude +4 more
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Electrodeposition of CuInSe2(CIS) via Electrochemical Atomic Layer Deposition (E-ALD)
Langmuir, 2012The growth of stoichiometric CuInSe(2) (CIS) on Au substrates using electrochemical atomic layer deposition (E-ALD) is reported here. Parameters for a ternary E-ALD cycle were investigated and included potentials, step sequence, solution compositions and timing.
Dhego, Banga +7 more
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Control System of an Atomic Layer Deposition (ALD) Machine
2013Atomic Layer Deposition is one of the most efficient deposition processes for obtaining ultrathin films. The deposition by this process happens one atomic layer at a time. ALD is known for its precision and ability to develop quality films with great thickness control.
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PV Absorber Layered Materials Formation Using Potential Pulse Atomic Layer Deposition (PP-ALD),
ECS Meeting Abstracts, 2017Thin film photovoltaic solar cells are a promising avenue for solar technology. However, they currently are not as cost effective as fossil fuels. Several absorber layer materials have been formed using various methods in the past. CuIn(1-x)GaxSe2(CIGS) is a promising material due to its tunable direct bandgap, allowing thin films to be used in ...
Peter W Sisk +2 more
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