Results 171 to 180 of about 7,248 (265)

Defect Engineering in Atomic-Layer-Deposited Cerium Oxide. [PDF]

ACS Appl Mater Interfaces
Tschammer R, Schmickler M, Kosto Y, Henkel K, Kaur P, Devi A, Morales C, Flege JI.   +7 more
europepmc   +1 more source

Thin Fluoride Insulators for Improved 2D Transistors: From Deposition Methods to Recent Applications

physica status solidi (RRL) – Rapid Research Letters, EarlyView.
2D materials hold significant promise for next‐generation electronic and optoelectronic devices, but suitable gate dielectrics are still a challenge. Fluoride insulators, offering inert, dangling‐bond‐free surfaces, have recently emerged as strong candidates. This review covers recent publications on high‐quality fluoride thin‐film deposition and their
Behzad Dadashnia, Saeed Rasouli, Walter M. Weber, Daniele Nazzari   +3 more
wiley   +1 more source

Control of Microstructure, Trap Levels, and Trap Distribution in HfO₂ Films Grown by Atomic Layer Deposition. [PDF]

Nanomaterials (Basel)
Sharafi SM, Flores M, Appuhami H, Selim FA.   +3 more
europepmc   +1 more source

ALD(Atomic Layer Deposition) Process Technology in the Semiconductor Industry

Physics and High Technology, 2012
openaire   +1 more source

Strategy for One‐Step Optimization of Metal Oxide Passivating Contact Materials for Si Heterojunction Solar Cells through Growth Angle Variation

Small, EarlyView.
A one‐step oblique angle reactive sputtering approach enables simultaneous tuning of bulk and interfacial stoichiometry in a metal oxide/ silicon heterojunction. In case of vanadium oxides, growth angle variation controls the formation of stoichiometric SiO2, ternary SiOx(V) interlayer, and phase purity of vanadium oxide, considerably simplifying the ...
Aparajita Mandal, Alexis Franquet, Hans Hofsäss, Tapobrata Som   +3 more
wiley   +1 more source

Impact of variations in ALD procedure on nanomorphology, protecting properties and chemical stability of thin TiO₂ films. [PDF]

RSC Adv
Krýsová H, Imrich T, Tarábková H, Janda P, Krýsa J.   +4 more
europepmc   +1 more source

Low Temperature Site‐Specific Pulsed Laser Annealing of MoS2

Small, EarlyView.
The application of laser pulses, of extremely short duration, is investigated as a potential new method to modify the atomic structure of ultrathin 2D materials for use in the creation of future electrical devices. The process is efficient, offering a site‐specific functionality, where regions of an electronic device that only requires annealing is ...
Nazar Farid, Aashi Gupta, Pavlina Metaxa, A Arifutzzaman, Hariprasad Kuduvan, Rahil Haria, Michele Conroy, Ian Campbell, Ageeth A Bol, James Connolly, Jun Lin, Ian Povey, Ray Duffy, Gerard M O'Connor   +13 more
wiley   +1 more source

Reductive Transformation of ALD TeO₂ into Continuous and Impurity-Free Tellurium Films. [PDF]

Small
Ryu SH, Kim S, Kim T, Jeon J, Park GM, Yoo H, Kim SC, Won SO, Kim JY, Kim SK.   +9 more
europepmc   +1 more source

Introducing Chemical Vapor Etching (CVE): A Material‐Selective Approach for Surgically Precise Tarnish Removal

Small, EarlyView.
ABSTRACT The controlled removal of corrosion products is a persistent challenge in fields ranging from industrial alloy protection to cultural heritage conservation. Achieving high precision and selectivity in subtractive treatments remains difficult because of chemical complexity and structural heterogeneity of the corrosion layers.
Yumei Chai, Aranzazu Sierra‐Fernández, Yuxing Qin, Raydel Pérez Menéndez, Jianfeng Zhu, Mato Knez   +5 more
wiley   +1 more source

Coupled Roles of Surface Chemistry and Hydrogen-Assisted Cycling in Ruthenium Atomic Layer Deposition on Silicon Oxides. [PDF]

ACS Omega
Ha S, Oh H, Lee WI, Chowdhury MI, Tong X, Liu M, Nam CY.   +6 more
europepmc   +1 more source