Results 221 to 230 of about 623,593 (284)

Atomic-scale quantification of individual oxygen vacancies and structural evolution in valence change memristors. [PDF]

open access: yesNat Commun
Wang Z   +12 more
europepmc   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

open access: yesAdvanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa   +19 more
wiley   +1 more source

Sustainable Catalyst‐Free PLG Networks: Recyclability, Biodegradability, and Functional Performance

open access: yesAdvanced Functional Materials, EarlyView.
A catalyst‐additive free covalent adaptable network is developed from star‐shaped poly(lactide‐co‐glycolide) cross‐linked with pyromellitic dianhydride, enabling internal carboxylic acid‐driven transesterification. The resulting biodegradable network exhibits mechanical robustness (Young's modulus ≈1.6 GPa), complete recyclability, rapid biodegradation
Lars Schwarzer   +2 more
wiley   +1 more source

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

open access: yesAdvanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee   +16 more
wiley   +1 more source

A New Threshold Switching Device With Tunable Negative Differential Resistance Based on ErMnO3 Polymorphs

open access: yesAdvanced Functional Materials, EarlyView.
Polymorph engineering in ErMnO3 enables low‐voltage, forming‐free threshold switching with tunable negative differential resistance. Conducting orthorhombic regions embedded in an insulating hexagonal matrix provide controlled Joule‐heating‐enhanced Poole–Frenkel transport. The hexagonal phase prevents excessive heating and breakdown.
Rong Wu   +8 more
wiley   +1 more source

Home - About - Disclaimer - Privacy