Results 91 to 100 of about 99,359 (307)

Depth of maximum of air-shower profiles at the Pierre Auger Observatory: Measurements above $10^{17.2}$ eV and Composition Implications

, 2017
We present distributions of shower depth of maximum ($X_{\mathrm{max}}$) and their interpretation in terms of the cosmic ray mass composition. The measurements of $X_{\mathrm{max}}$ are based on data from the fluorescence telescopes of the Pierre Auger ...
J. Bellido
semanticscholar   +1 more source

Nanoconfined Cu─O─Mo Asymmetric Sites Enable Ambient Spontaneous O2‐to‐1O2 Conversion for Sustainable Water Purification

Advanced Materials, EarlyView.
An asymmetric Cu+─O─Mo6+ dual‐site in a nanoconfined membrane turns O2 into singlet oxygen at ambient conditions with ≈95% selectivity, bypassing superoxide. It concentrates reactants for rapid pollutant removal, operates stably in continuous flow with ultra‐low metal leaching and cost, efficiently purifying complex waters.
Jian Ye, Chenxiao Yu, Jiangdong Dai, Lili Li, Ruilong Zhang, Jianming Pan, Wenhua Xue, Yuehan Jiang, Jun Zhao   +8 more
wiley   +1 more source

Correlation of the Auger electrons direction of movement with the internal electron conversion direction of movement [PDF]

Ядерна фізика та енергетика, 2013
On installation of coincidences of -quanta with electrons and with law energy electrons about zero area the spatial correlation of the direction emitting Auger-electrons and electron of internal conversion was investigated at the 152Eu decay.
M. F. Mitrokhovich, V. T. Kupryashkin, L. P. Sidorenko   +2 more
doaj  

Sustainability-Oriented Multi-Criteria Analysis of Different Continuous Flight Auger Piles [PDF]

, 2021
Irene Josa, Nikola Tošić, Snežana Marinković, Albert de la Fuente, Antonio Aguado   +4 more
openalex   +1 more source

2D Indium Oxide at the Epitaxial Graphene/SIC Interface: Synthesis, Structure, Properties, and Devices

Advanced Materials, EarlyView.
A new monolayer insulator, InO2, is synthesized by intercalating indium beneath patterned epitaxial graphene on SiC, followed by high‐temperature oxidation. This selective confinement yields large‐area, uniform InO2 with a wide bandgap of 4.1 eV. Upon intercalation, the EG/n‐SiC junction transitions from ohmic to Schottky, exhibiting a rectification ...
Furkan Turker, Bohan Xu, Chengye Dong, Michael Labella III, Nadire Nayir, Natalya Sheremetyeva, Zachary J. Trdinich, Duanchen Zhang, Gokay Adabasi, Bita Pourbahari, Li‐Syuan Lu, Wesley E. Auker, Ke Wang, Mehmet Baykara, Vincent Meunier, Nabil Bassim, Adri C. T. van Duin, Vincent H. Crespi, Joshua A. Robinson   +18 more
wiley   +1 more source

Independence of optical absorption on Auger ionization in single-walled carbon nanotubes revealed by ultrafast e–h photodoping

New Journal of Physics, 2016
Auger-ionized free-carriers in a one-dimensional semiconductor are predicted to result in a strong band-gap renormalization. Isolated single-walled carbon nanotubes (SWCNT) under high-intensity laser irradiation exhibit strong nonlinear photoluminescence
Mitchell D Anderson, Meghan N Beattie, Jack A Alexander-Webber, Robin J Nicholas, James M Fraser   +4 more
doaj   +1 more source

Fabrication of GaN Nanowire Arrays via Electrodeless Photoelectrochemical Etching and its Application on UV Photodetectors

Advanced Materials Interfaces, EarlyView.
A local electric field‐enhanced electrodeless photoelectrochemical (ELPEC) etching method facilitates the anisotropic evolution of GaN nanostructures from nanocones to hollow nanocones and eventually to nanowire arrays. This rapid, mask‐free approach offers a practical and scalable route for fabricating ultraviolet photodetectors with improved ...
Chuhao Cai, Pengfei Yu, Yun Chen, Jiawei Xiao, Junjie Zhang, Li Ma, Maoxiang Hou, Xin Chen, Jian Gao, Ching‐Ping Wong, Meihong He, Wei Feng   +11 more
wiley   +1 more source

Temperature and carrier-density dependence of Auger and radiative recombination in nitride optoelectronic devices

New Journal of Physics, 2013
Nitride light-emitting diodes are a promising solution for efficient solid-state lighting, but their performance at high power is affected by the efficiency-droop problem.
Emmanouil Kioupakis, Qimin Yan, Daniel Steiauf, Chris G Van de Walle   +3 more
doaj   +1 more source

Comments on Auger Recombination in Semiconductors [PDF]

, 1968
Alan B. Grebene
openalex   +1 more source

Direct Ink Writing 3D Printing of Recyclable and Thermally Stable Vitrimers

Advanced Materials Technologies, EarlyView.
Vitrimers hold great promise in additive manufacturing as defect‐insensitive, repairable, and recyclable feedstocks. A thin‐film additively manufactured process is developed for a high‐performance vitrimer that is difficult to process traditionally.
Louis O. Vaught, Ronald Sellers, Andreas A. Polycarpou   +2 more
wiley   +1 more source