Results 161 to 170 of about 33,863 (260)

Acid Site Design for Low Hydration Proton Exchange Membranes

open access: yesAdvanced Functional Materials, EarlyView.
α‐CF2 substitution adjacent to sulfonic acid increases acid strength and enables efficient proton transport under low hydration conditions. This molecular design reduces the dependence of hydrocarbon proton exchange membranes on excessive water uptake, addressing a key limitation of conventional hydrocarbon PEMs while maintaining favorable conductivity
Ajay Kumar   +10 more
wiley   +1 more source

Increasing Inter‐Micellar Connectivity Toughens and Imparts Cooling‐Induced Shape Memory in Micellar Hydrogels

open access: yesAdvanced Functional Materials, EarlyView.
Oligomerizing Pluronic triblock copolymers provides a processing strategy for tuning the mechanical properties and stimuli‐responsive behaviors of micellar hydrogels. Varying oligomer fraction produces hydrogels spanning brittle to highly extensible responses; maintaining micellar architectures enables cooling‐induced reverse thermal shape memory and ...
Gourav Kumbhojkar   +8 more
wiley   +1 more source

Atom Probe Tomography as an Emerging Tool for Understanding Defect‑Driven Mechanisms in HfO2‑Based Ferroelectrics

open access: yesAdvanced Functional Materials, EarlyView.
This Perspective highlights atom probe tomography as a powerful tool for understanding the atomic‐scale defect chemistry in HfO2‐based ferroelectrics. 3D mapping of dopants, point defects, and interface chemistry can provide new insight into defect‐driven mechanisms underpinning the ferroelectricity in the system and guide the design of more reliable ...
Kasper Hunnestad   +3 more
wiley   +1 more source

Two Coexisting Pathways to Volatility in Valence‐Change Memory Devices

open access: yesAdvanced Functional Materials, EarlyView.
Volatile VCM‐type memristive devices exhibit current relaxation after resistive switching, but their microscopic origin remains debated. Using pulsed measurements and a new Tunnel‐DLTS approach on Pt/SrTiO3/Nb:SrTiO3 devices, we show that post‐SET volatility is predominantly ionic, while electronic contributions—arising from quasi‐Fermi‐level ...
Johannes Hellwig   +3 more
wiley   +1 more source

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