Results 161 to 170 of about 31,061 (257)
Hybrid deep learning and optimized variational mode decomposition for point-interval runoff prediction. [PDF]
Ma H +3 more
europepmc +1 more source
Ising machines are emerging as specialized hardware solvers for computationally hard optimization problems. This review examines five major platforms—digital CMOS, analog CMOS, emerging devices, coherent optics, and quantum systems—highlighting physics‐rooted advantages and shared bottlenecks in scalability and connectivity.
Hyunjun Lee, Joon Pyo Kim, Sanghyeon Kim
wiley +1 more source
Ultrafast Random Number Generation Using Broadband Polarization Chaos in QD Spin-VCSELs. [PDF]
Tselios C +3 more
europepmc +1 more source
Implications of Transient Negative Capacitance Effect in Ferroelectric Polarization Dynamics
Transient voltage artifacts observed during ferroelectric switching are shown to originate from measurement circuitry rather than intrinsic negative capacitance. By correlating switching current, time scale, and series resistance, this work establishes practical design rules for reliable pulse‐switching experiments and circuit integration of ...
Marin Alexe
wiley +1 more source
Ghost-peak-based estimation of modulation amplitude in optical correlation-domain reflectometry. [PDF]
Motoda K, Mizuno Y.
europepmc +1 more source
Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference
This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho +6 more
wiley +1 more source
In this work, low‐resolution infrared imaging is combined with a 28 nm FeFET IMC architecture to enable compact, energy‐efficient edge inference. MLC FeFET devices are experimentally characterized, and controlled multi‐level current accumulation is validated at crossbar array level.
Alptekin Vardar +9 more
wiley +1 more source
Anisotropic Magnetoresistive Sensors: Dynamic Modeling and Characterization for Blade Tip-Timing Measurements. [PDF]
Busti D +4 more
europepmc +1 more source
Silicon Nitride Resistive Memories
Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis +7 more
wiley +1 more source

