Results 111 to 120 of about 2,689,763 (159)
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III-Nitride millimeter wave transistors
III-Nitride Electronic Devices, 2019This chapter reviews current status of GaN-based millimeter-wave power amplifier performance and discusses recent advancements in high-frequency III-nitride high electron mobility transistor (HEMT) device technologies for improved frequency performance ...
K. Shinohara
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Basel III: Are We Done Now?, 2018
On 7 December 2017, the Group of Central Bank Governors and Heads of Supervision (GHOS) concluded an intensive and difficult round of negotiations by endorsing the final Basel III package of reforms.
W. Coen
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On 7 December 2017, the Group of Central Bank Governors and Heads of Supervision (GHOS) concluded an intensive and difficult round of negotiations by endorsing the final Basel III package of reforms.
W. Coen
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Physics-based III-Nitride device modeling
III-Nitride Electronic Devices, 2019This chapter gives an overview of physical compact models that describe the terminal electro-thermal behavior of III-Nitride devices. Device models are important since they act as a link between device-design stage and circuit/system-level design stage ...
U. Radhakrishna
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Book Bait IV: Using Books to Lure Bright Students
Gifted Child Today Magazine, 1992Book Bait consists of a series of articles designed to help parents and teachers provide appropriate books for their young gifted readers. The books recommended here represent the wide variety of interests for today's youth. These articles will be published as a forthcoming GCT Inc. book.
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Epitaxial growth of III-nitride electronic devices
III-Nitride Electronic Devices, 2019In the chapter of epitaxial growth of III-nitride electronic devices, we discuss the growth methods for Ga-polar nitride epitaxy and perform a comparison study of epitaxy tools based on their advantages and disadvantages.
Yu Cao
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III-Nitride lateral transistor power switch
III-Nitride Electronic Devices, 2019In this chapter, we discuss III-nitride lateral transistors for power switching applications. GaN-based transistors have the capabilities of delivering high current, handling high voltage, and switching at high speed.
Sang-Woo Han, R. Chu
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Termites of a South African savanna
Oecologia, 1982Cellulose toilet roll baits were exposed in three different subhabitats at Nylsvley Reserve, northern Transvaal, and respective attacks by up to eight species of termites are described and illustrated. In broad-leaved savanna attack was principally by Microcerotermes, a slow feeder that attacked rolls throughout the year, finding about half the rolls ...
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Ecologic Studies of Japanese Encephalitis Virus in Japan
The American Journal of Tropical Medicine and Hygiene, 1959Summary At the Shinhama heronry and nearby Minamigyotoku village near Tokyo, Japan, in 1953, C. tritaeniorhynchus, the major vector of Japanese encephalitis virus in Japan, entered traps baited with Black-crowned Night Herons in numbers 3 to 15 times greater than traps containing egrets or chickens; Blue Magpies, Tree Sparrows, Dusky Thrushes, and Grey
W F, SCHERER +4 more
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Social and economic determinants of international migration: a study of Kuki migrants in Singapore
International journal of sociology and social policyThe purpose of this paper is to examine the social and economic determinants that influenced the Kuki migration from Manipur, India to Singapore. It analyses the economic, social and cultural dimensions that motivated and shaped the journey of the ...
Lhunjamang Baite, B. Panda
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Electronic properties of III-nitride materials and basics of III-nitride FETs
III-Nitride Electronic Devices, 2019The material characteristics of GaN, AlN and InN are first reviewed, with primary focus on parameters important for electronic device applications. The structure and performance characteristics of nitride-based heterostructure FETs are then summarized ...
P. Asbeck
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