Results 281 to 290 of about 3,159,636 (329)

Composition Modulation‐Mediated Band Alignment Engineering from Type I to Type III in 2D vdW Heterostructures

Advances in Materials
Band alignment engineering is crucial for facilitating charge separation and transfer in optoelectronic devices, which ultimately dictates the behavior of Van der Waals heterostructures (vdWH)‐based photodetectors and light emitting diode (LEDs). However,
Dingli Guo, Qiang Fu, Guitao Zhang, Yueying Cui, Kaiyang Liu, Xinlei Zhang, Yali Yu, Weiwei Zhao, Ting Zheng, Haoran Long, Peiyu Zeng, Xu Han, Jun Zhou, Kaiyao Xin, Tiancheng Gu, Wenhui Wang, Qi Zhang, Zhenliang Hu, Jialin Zhang, Qian Chen, Zhongming Wei, Bei Zhao, Junpeng Lu, Zhenhua Ni   +23 more
semanticscholar   +1 more source

Novel infrared band-aligned superlattice laser

Applied Physics Letters, 1987
A novel infrared laser is proposed which uses the intersubband optical transition in a band-aligned superlattice. In this band-aligned superlattice laser, the miniband discontinuity within the conduction of valence band functions as a band offset in the heterojunction structure, and the population inversion is achieved by current injection as in the ...
Perng-fei Yuh, K. L. Wang
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Band alignment at electrode-organic interfaces

SPIE Proceedings, 2009
The band alignment at metal-organic interfaces has been extensively studied; however the electrodes in real devices often consist of metals modified with dielectric buffer layers. We demonstrate that interface dipole theory, originally developed to describe Schottky contacts at metal-semiconductor interfaces, can also accurately describe the ...
M. G. Helander, Z. B. Wang, M. T. Greiner, J. Qiu, Z. H. Lu   +4 more
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Band alignment of ZnSe/Zn0.75Mg15Be10Se heterostructures

Journal of Applied Physics, 2002
The optical properties and band alignment of ZnSe/ZnMgBeSe heterostructures are investigated. Two sets of ZnSe/ZnMgBeSe multi-quantum-well structures that consist of five or three wells with different well thicknesses and 100-nm-thick ZnMgBeSe barrier layers are grown on GaAs (100) substrates by molecular beam epitaxy. Low-temperature photoluminescence
K. Godo, H. Makino, M. W. Cho, J. H. Chang, S. K. Hong, T. Yao, M. Y. Shen, T. Goto   +7 more
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Band alignment in ZrSiO4/ZnO heterojunctions

Vacuum, 2016
Abstract We have measured the band offsets of sputtered ZrSiO 4 on bulk ZnO wafers using X-Ray Photoelectron Spectroscopy and obtained the bandgaps of these two materials using reflection electron energy loss spectroscopy. The valence band offset was determined to be −0.60 eV ± 0.04 eV for ZrSiO 4 on ZnO, while the respective bandgaps were 3.22 eV ...
David C. Hays, B.P. Gila, S.J. Pearton, Byung-Jae Kim, F. Ren   +4 more
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Band Alignment in Organic Materials

2008
Band alignment at metal/organic (MO) and organic/organic (OO) interfaces is discussed within a unified Induced Density of Interface States (IDIS) model, which incorporates most of the effects that can be expected to operate at weakly interacting organic interfaces: compression of the metal electron tails due to Pauli repulsion, orientation of molecular
F. Flores, J. Ortega, H. Vázquez
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Band Alignment at Oxide Semiconductor Interfaces

MRS Proceedings, 2003
AbstractTransparent conductive oxides (TCOs) are important contact materials in thin film solar cells. It is thus important to understand their basic interface properties as the band alignment. We present results on the determination of interfacial properties of TCOs using photoelectron spectroscopy.
F. Säuberlich, A. Klein
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Band alignment at CdS/CuInS2 heterojunction

Applied Physics Letters, 1995
Band offsets at CdS/CuInS2 heterojunctions are studied by x-ray photoemission spectroscopy. At the CdS/cyanide-treated CuInS2 junction, the conduction band offset is as small as −0.05±0.15 eV, while the valence band offset is 1.18±0.10 eV. The CdS/Cu-rich CuInS2 heterojunction without the treatment, however, possesses a conduction band offset of ∼−0.7 ...
Yoshio Hashimoto, Kazuhiro Takeuchi, Kentaro Ito   +2 more
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Band alignment at SrCu2O2/ZnO heterointerface

Journal of Applied Physics, 2009
SrCu 2 O 2 / ZnO interface is interesting for application in blue and UV light emission devices. Measurements of the valence band offset at SrCu2O2/ZnO interface using photoelectron spectroscopy result in an offset of 2.0 eV (cliff), meaning that the interface band gap is reduced to 1.4 eV. Blue and UV light emission observed previously can be attained
I. Konovalov, R. Hesse
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Towards high efficiency Cd-Free Sb2Se3 solar cells by the band alignment optimization

, 2020
In this paper, we investigated the effect of Zn1-yMgyO/ZnO1-xSx double buffer layers on the antimony selenide (Sb2Se3) solar cells performance. Our results show that the magnesium and sulfur concentrations in proposed double buffer layers have a ...
Iman Gharibshahian, A. Orouji, S. Sharbati   +2 more
semanticscholar   +1 more source