Results 261 to 270 of about 177,978 (297)

Band Alignment at Oxide Semiconductor Interfaces

MRS Proceedings, 2003
AbstractTransparent conductive oxides (TCOs) are important contact materials in thin film solar cells. It is thus important to understand their basic interface properties as the band alignment. We present results on the determination of interfacial properties of TCOs using photoelectron spectroscopy.
F. Säuberlich, A. Klein
openaire   +1 more source

Energy Band Alignment between Anatase and Rutile TiO2

Journal of Physical Chemistry Letters, 2013
Using photoelectron spectroscopy, the interface formation of anatase and rutile TiO2 with RuO2 and tin-doped indium oxide (ITO) is studied. It is consistently found that the valence band maximum of rutile is 0.7 ± 0.1 eV above that of anatase.
Paul Erhart, Shunyi Li, Joachim Brötz   +2 more
exaly   +2 more sources

Aligned bands and gyromagnetic ratios in 162,164Tm

Nuclear Physics A, 1987
Abstract High-spin states in 162Tm and 164Tm have been studied by 152,154Sm(14N, 4n) reactions. Measurements of γ-rays, angular distributions and γγ-coincidences were performed using Ge detectors. In each isotope, two side bands are observed besides the yrast band, which are followed up to high-spin states.
Drissi, S., Dousse, J.C., Ionescu, V., Kern, J., Pinston, J.A., Barneoud, D.   +5 more
openaire   +2 more sources

Band alignment of ZnSe/Zn0.75Mg15Be10Se heterostructures

Journal of Applied Physics, 2002
The optical properties and band alignment of ZnSe/ZnMgBeSe heterostructures are investigated. Two sets of ZnSe/ZnMgBeSe multi-quantum-well structures that consist of five or three wells with different well thicknesses and 100-nm-thick ZnMgBeSe barrier layers are grown on GaAs (100) substrates by molecular beam epitaxy. Low-temperature photoluminescence
K. Godo, H. Makino, M. W. Cho, J. H. Chang, S. K. Hong, T. Yao, M. Y. Shen, T. Goto   +7 more
openaire   +1 more source

Band Alignment in Organic Materials

2008
Band alignment at metal/organic (MO) and organic/organic (OO) interfaces is discussed within a unified Induced Density of Interface States (IDIS) model, which incorporates most of the effects that can be expected to operate at weakly interacting organic interfaces: compression of the metal electron tails due to Pauli repulsion, orientation of molecular
F. Flores, J. Ortega, H. Vázquez
openaire   +1 more source

Band alignment at electrode-organic interfaces

SPIE Proceedings, 2009
The band alignment at metal-organic interfaces has been extensively studied; however the electrodes in real devices often consist of metals modified with dielectric buffer layers. We demonstrate that interface dipole theory, originally developed to describe Schottky contacts at metal-semiconductor interfaces, can also accurately describe the ...
M. G. Helander, Z. B. Wang, M. T. Greiner, J. Qiu, Z. H. Lu   +4 more
openaire   +1 more source

A Method of Band-Pass Amplifier Alignment

Proceedings of the IRE, 1953
A method of alignment of band-pass amplifiers is discussed based on the oscilloscopic display of second order harmonic distortion as a function of the carrier frequency departure from the pass-band center. This method of alignment is thought particularly effective for band-pass amplifiers requiring high degree of linearity of transfer phase versus ...
J. Hupert, A. Reslock
openaire   +1 more source

Theory and applications of band-aligned superlattices

IEEE Journal of Quantum Electronics, 1989
A general device concept based on the miniband junctions formed in superlattices is described. Just as heterojunctions play an important role in bulk semiconductor devices, the miniband junctions have potential applications for superlattice devices.
K.L. Wang, null Perng-Fei Yuh
openaire   +1 more source

Band alignment of ScAlN/GaN heterojunction

Applied Physics Letters, 2020
The natural band alignments of ScxAl1−xN/GaN heterojunctions, with Sc-contents ranging from 0% to 25%, are investigated by first-principles density functional theory with the local density approximation. Type-I ScxAl1−xN/GaN heterojunctions with large conduction band offsets (CBOs) and valence band offsets (VBOs) are found. The band alignment of nearly
Hanlin Fu, Justin C. Goodrich, Nelson Tansu   +2 more
openaire   +1 more source

Band alignment at CdS/CuInS2 heterojunction

Applied Physics Letters, 1995
Band offsets at CdS/CuInS2 heterojunctions are studied by x-ray photoemission spectroscopy. At the CdS/cyanide-treated CuInS2 junction, the conduction band offset is as small as −0.05±0.15 eV, while the valence band offset is 1.18±0.10 eV. The CdS/Cu-rich CuInS2 heterojunction without the treatment, however, possesses a conduction band offset of ∼−0.7 ...
Yoshio Hashimoto, Kazuhiro Takeuchi, Kentaro Ito   +2 more
openaire   +1 more source