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Intrinsic energy band alignment of functional oxides

Physica Status Solidi - Rapid Research Letters, 2014
The energy band alignment at interfaces between different materials is a key factor, which determines the function of electronic devices. While the energy band alignment of conventional semiconductors is quite well understood, systematic experimental ...
Shunyi Li, Feng Chen, R Schafranek
exaly   +2 more sources

Band Alignment Engineering at Cu2O/ZnO Heterointerfaces

ACS Applied Materials & Interfaces, 2016
Energy band alignments at heterointerfaces play a crucial role in defining the functionality of semiconductor devices, yet the search for material combinations with suitable band alignments remains a challenge for numerous applications.
Sebastian Siol, S David Tilley, Michael Grätzel   +2 more
exaly   +2 more sources

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Collective bands and yrast band alignments in 78Kr

Nuclear Physics A, 1996
The structure of the collective bands in 78Kr is studied within the framework of our deformed configuration mixing shell model based on Hartree-Fock states. The configuration space consists of the spherical single particle orbits 1p32, 0f52, 1p12 and 0g92 with 56Ni as the core.
K.C. Tripathy, R. Sahu
openaire   +1 more source

Band bowing and band alignment in InGaN alloys

Applied Physics Letters, 2010
We use density functional theory calculations with the HSE06 hybrid exchange-correlation functional to investigate InGaN alloys and accurately determine band gaps and band alignments. We find a strong band-gap bowing at low In content. Band positions on an absolute energy scale are determined from surface calculations.
Poul Georg Moses, Chris G. Van de Walle
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Band-edge alignment in heterostructures

Applied Physics Letters, 1989
Conduction-band and valence-band energies are presented for ternary III-V compounds in a novel way. These data are used to evaluate new material combinations for heterostructure devices.
Fritz L. Schuermeyer, Paul Cook, Edgar Martinez, John Tantillo   +3 more
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Alignments and band termination in99,100Ru

Zeitschrift f�r Physik A Hadrons and Nuclei, 1993
h11/2 neutron and g9/2 proton alignments in 99,100Ru deduced from comparisons of experimental Routhians and aligned angular momenta to cranking model calculations. There is indication of band termination in100Ru.
Gizon, J., Jerrestam, D., Gizon, A., Jozsa, M., Bark, R., Fogelberg, B., Ideguchi, E., Klamra, W., Lindblad, T., Mitarai, S., Nyberg, J., Piiparinen, M., Sletten, G.   +12 more
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Band alignment at band‐insulator/Mott‐insulator interfaces

physica status solidi (RRL) – Rapid Research Letters, 2014
Abstractmagnified imageRecent experiments have demonstrated the formation of a two‐dimensional electron gas (2DEG) with a high density of 3 × 1014 cm–2 at the interface of a band insulator (SrTiO3) and a Mott insulator (GdTiO3), with potential application in electronic devices.
A. Janotti, L. Bjaalie, B. Himmetoglu, C. G. Van de Walle   +3 more
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Band alignment at the La2Hf2O7∕(001)Si interface

Applied Physics Letters, 2006
In the perspective of exploring alternative gate dielectrics for the future generation of microelectronic devices, we investigated experimentally and theoretically the interface energy barriers induced on (001) silicon by La2Hf2O7, whose growth has been recently attained by molecular-beam epitaxy.
Seguini, G, Spiga, S, BONERA, EMILIANO, FANCIULLI, MARCO, Huamantinco, AR, Forst, CJ, Ashman, CR, Blochl, PE, Dimoulas, A, Mavrou, G.   +9 more
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Valence band structure and band alignment at the ZrO2/Si interface

Applied Physics Letters, 2004
X-ray photoelectron spectroscopy combined with first-principles simulations are used to determine the band alignments of ZrO2 thin films on silicon. Theoretical band offsets were calculated by simulating the ZrO2/Si interface by means of plane-wave pseudopotential calculations.
Ragesh Puthenkovilakam, Jane P. Chang
openaire   +1 more source

Band Alignment in WSe₂–Graphene Heterostructures

ACS Nano, 2015
Using different types of WSe2 and graphene-based heterostructures, we experimentally determine the offset between the graphene neutrality point and the WSe2 conduction and valence band edges, as well as the WSe2 dielectric constant along the c-axis. In a first heterostructure, consisting of WSe2-on-graphene, we use the WSe2 layer as the top dielectric ...
Kyounghwan, Kim, Stefano, Larentis, Babak, Fallahazad, Kayoung, Lee, Jiamin, Xue, David C, Dillen, Chris M, Corbet, Emanuel, Tutuc   +7 more
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