Results 1 to 10 of about 11,266 (164)
Computing with DFT Band Offsets at Semiconductor Interfaces: A Comparison of Two Methods [PDF]
Nanomaterials, 2021 Two DFT-based methods using hybrid functionals and plane-averaged profiles of the Hartree potential (individual slabs versus vacuum and alternating slabs of both materials), which are frequently used to predict or estimate the offset between bands at ...
José C. Conesa
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Band-offsets scaling of low-index Ge/native-oxide heterostructures [PDF]
Scientific ReportsWe investigate, through XPS and AFM, the pseudo layer-by-layer growth of Ge native oxide across Ge(001), (110) and (111) surfaces in ambient environment. More significantly, our study reveals a universal set of valence and conduction band offset (VBO and
Bin Leong Ong, Eng Soon Tok
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Results in Physics, 2015 Due to a strong inversion layer at the a-Si:H/c-Si interface, there are errors in the determination of the band offsets by usual capacitance–voltage (C–V) measurements.
G.Z. Nie, C.L. Zhong, L.E. Luo, Y. Xu
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Visualizing band offsets and edge states in bilayer–monolayer transition metal dichalcogenides lateral heterojunction [PDF]
Nature Communications, 2016 Heterojunctions of two-dimensional materials are used to design electronic and optoelectronic devices. Here, the authors show that zigzag terraces between monolayers and bilayers form atomically sharp type-I heterojunctions, resulting in a wire-like ...
Chendong Zhang +7 more
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Band Offsets from Angle‐Resolved Valence Band Photoemission Spectroscopy
Advanced Materials InterfacesThe conduction band offset ϕ0 at semiconductor surfaces and interfaces is a crucial parameter for quantum devices exploiting proximity‐induced collective states such as superconductivity and magnetism.
Procopios Constantinou +11 more
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First–Principles Calculations of Band Offsets in GaAs/AlAs System [PDF]
Progress in Physics of Applied Materials, 2022 The lattice-matched system (GaAs)n/(AlAs)n superlattice is calculated for two different values of n=3 and 6 within ab initio pseudopotential density-functional theory using Quantum Espresso package of program exploiting the ultra-soft atomic ...
Seiyed Hamid Reza Shojaei +1 more
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Calculation of Band Offsets of Mg(OH)2-Based Heterostructures
Electronic Materials, 2021 The band alignment of Mg(OH)2-based heterostructures is investigated based on first-principles calculation. (111)-MgO/(0001)-Mg(OH)2 and (0001)-wurtzite ZnO/(0001)-Mg(OH)2 heterostructures are considered. The O 2s level energy is obtained for each O atom
Masaya Ichimura
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Band Offsets, Optical Conduction, Photoelectric and Dielectric Dispersion in InSe/Sb2Te3 Heterojunctions [PDF]
Materials Research, 2021 InSe based heterojunction devices gain importance in optoelectronic applications in NIR range as multipurpose sensors. For this reason, InSe/Sb2Te3 heterojunctions are constructed as NIR sensors by the thermal evaporation technique.
Latifah Hamad Khalid Alfhaid +2 more
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Terahertz Pulse Emission from Semiconductor Heterostructures Caused by Ballistic Photocurrents
Sensors, 2021 Terahertz radiation pulses emitted after exciting semiconductor heterostructures by femtosecond optical pulses were used to determine the electron energy band offsets between different constituent materials.
Vitaly Leonidovich Malevich +5 more
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Cumhuriyet Science Journal, 2021 In this study, ground state binding energy of heavy hole magneto exciton in GaAs/In0.47Ga 0.53As cylindrical quantum well wires (CQWWs) were calculated using variational technique depending on wire size and external parameters.
Pınar Başer
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