Visualizing band offsets and edge states in bilayer–monolayer transition metal dichalcogenides lateral heterojunction [PDF]
Heterojunctions of two-dimensional materials are used to design electronic and optoelectronic devices. Here, the authors show that zigzag terraces between monolayers and bilayers form atomically sharp type-I heterojunctions, resulting in a wire-like ...
Chendong Zhang +7 more
doaj +4 more sources
Composition dependent band offsets of ZnO and its ternary alloys. [PDF]
We report the calculated fundamental band gaps of wurtzite ternary alloys Zn1−xMxO (M = Mg, Cd) and the band offsets of the ZnO/Zn1−xMxO heterojunctions, these II-VI materials are important for electronics and optoelectronics. Our calculation is based on
Yin H, Chen J, Wang Y, Wang J, Guo H.
europepmc +3 more sources
Determination of band offsets, hybridization, and exciton binding in 2D semiconductor heterostructures. [PDF]
Photoemission measurements on exfoliated 2D heterostructures reveal detailed electronic structure and hybridization effects. Combining monolayers of different two-dimensional semiconductors into heterostructures creates new phenomena and device ...
Wilson NR +11 more
europepmc +2 more sources
Computing with DFT Band Offsets at Semiconductor Interfaces: A Comparison of Two Methods [PDF]
Two DFT-based methods using hybrid functionals and plane-averaged profiles of the Hartree potential (individual slabs versus vacuum and alternating slabs of both materials), which are frequently used to predict or estimate the offset between bands at ...
José C. Conesa
doaj +2 more sources
Band-offsets scaling of low-index Ge/native-oxide heterostructures [PDF]
We investigate, through XPS and AFM, the pseudo layer-by-layer growth of Ge native oxide across Ge(001), (110) and (111) surfaces in ambient environment. More significantly, our study reveals a universal set of valence and conduction band offset (VBO and
Bin Leong Ong, Eng Soon Tok
doaj +2 more sources
Due to a strong inversion layer at the a-Si:H/c-Si interface, there are errors in the determination of the band offsets by usual capacitance–voltage (C–V) measurements.
G.Z. Nie, C.L. Zhong, L.E. Luo, Y. Xu
doaj +3 more sources
Band offsets in ITO/Ga2O3 heterostructures [PDF]
Abstract The valence band offsets in rf-sputtered Indium Tin Oxide (ITO)/single crystal β-Ga2O3 (ITO/Ga2O3) heterostructures were measured with X-Ray Photoelectron Spectroscopy using the Kraut method. The bandgaps of the component materials in the heterostructure were determined by Reflection Electron Energy Loss Spectroscopy as 4.6 eV for Ga2O3 and ...
Department of Chemical Engineering, University of Florida, Gainesville FL 32611 USA, USA ( host institution ) +7 more
semanticscholar +4 more sources
Band Offsets from Angle‐Resolved Valence Band Photoemission Spectroscopy
The conduction band offset ϕ0 at semiconductor surfaces and interfaces is a crucial parameter for quantum devices exploiting proximity‐induced collective states such as superconductivity and magnetism.
Procopios Constantinou +11 more
doaj +4 more sources
Band-offsets of GaInAsBi–InP heterojunctions
Abstract The alignment of band edges in bismide-based Ga 0.47 In 0.53 As 1−x Bi x –( Ga 0.47 In 0.53 As )–InP heterostructures is examined experimentally by THz emission spectroscopy technique. The determined band offsets of Ga 0.47 In 0.53 As 1 -
V Pačebutas +2 more
exaly +2 more sources
Efficient and improved prediction of the band offsets at semiconductor heterojunctions from meta-GGA density functionals: A benchmark study. [PDF]
Accurate theoretical prediction of the band offsets at interfaces of semiconductor heterostructures can often be quite challenging. Although density functional theory has been reasonably successful to carry out such calculations, efficient, accurate ...
A. Ghosh +8 more
semanticscholar +1 more source

