Results 1 to 10 of about 169,473 (163)
Nanoscale mapping of quasiparticle band alignment [PDF]
Nature Communications, 2019 Sharp atomic interfaces between materials dictate the interface’s electronic properties. The authors use angle-resolved photoemission spectroscopy with a spatial resolution of ~500 nm to investigate the nanoscale electronic band structure and band ...
Søren Ulstrup +12 more
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Ferroelectric-tuned van der Waals heterojunction with band alignment evolution [PDF]
Nature Communications, 2021 Band alignment engineering is important to realize high performance and multifunctionality in a specific van der Waals heterojunction. Here, the authors observe band alignment transition of the heterojunction in a ferroelectric-tuned van der Waals ...
Yan Chen +14 more
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Electric-field tunable Type-I to Type-II band alignment transition in MoSe2/WS2 heterobilayers [PDF]
Nature CommunicationsSemiconductor heterojunctions are ubiquitous components of modern electronics. Their properties depend crucially on the band alignment at the interface, which may exhibit straddling gap (type-I), staggered gap (type-II) or broken gap (type-III).
Jed Kistner-Morris +9 more
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Dynamic Control of Band Alignment and Built‐In Potential in High Performance Self‐Powered InSe/SnS2 Van der Waals Photodetectors via Gas Molecular Physisorption [PDF]
Small ScienceMolecular physisorption provides a versatile strategy to dynamically tailor the optoelectronic properties of van der Waals (vdW) heterostructures, enabling extended carrier lifetimes, broadened spectral response, and erasable memory effects in self ...
Ze Cao +6 more
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Investigation of Nitridation on the Band Alignment at MoS2/HfO2 Interfaces [PDF]
Nanoscale Research Letters, 2019 The effect of nitridation treatment on the band alignment between few-layer MoS2 and HfO2 has been investigated by X-ray photoelectron spectroscopy. The valence (conduction) band offsets of MoS2/HfO2 with and without nitridation treatment were determined
Ya-Wei Huan +6 more
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Bias dependent band alignment in Ga2O3 ferroelectric interface by operando HAXPES [PDF]
Scientific ReportsWe present a fundamental study of the band alignment at the interface of HfZrO4 (HZO) with Ge-doped Ga2O3. Ge is an alternative n-type dopant for the wide band gap Ga2O3 due to its shallow donor level and favorable MBE growth conditions.
Anthony Boucly +10 more
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Band alignment of Sb2O3 and Sb2Se3 [PDF]
Journal of Applied Physics, 2021 Antimony selenide (Sb2Se3) possesses great potential in the field of photovoltaics (PV) due to its suitable properties for use as a solar absorber and good prospects for scalability. Previous studies have reported the growth of a native antimony oxide (Sb2O3) layer at the surface of Sb2Se3 thin films during deposition and exposure to air, which can ...
Shiel, H +12 more
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Emerging 2D materials for tunneling field effect transistors
Tecnología en Marcha, 2023 This work focuses on understanding the electronic properties of materials to enhance the performance of Tunnel Field Effect Transistor (TFET) through Density Functional Theory (DFT) simulations. Material selection prefers a p-type material with in-plane
Nupur Navlakha +2 more
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Results in Materials, 2021 Photocatalysis is an attractive widely used environmental remediation technique. Ternary (α-Fe2O3/Fe2TiO5/TiO2) and binary (Fe2TiO5/TiO2) nanocomposites were successfully synthesized by using natural ilmenite sand as the raw material.
Thambiliyagodage Charitha +5 more
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Natural band alignment of MgO1−xSx alloys
AIP Advances, 2023 We have calculated formation enthalpies, bandgaps, and natural band alignment for MgO1−xSx alloys by first-principles calculation based on density functional theory.
Yuichi Ota +3 more
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