Nanoscale mapping of quasiparticle band alignment [PDF]
Sharp atomic interfaces between materials dictate the interface’s electronic properties. The authors use angle-resolved photoemission spectroscopy with a spatial resolution of ~500 nm to investigate the nanoscale electronic band structure and band ...
Søren Ulstrup +12 more
doaj +6 more sources
Band alignment of Sb2O3 and Sb2Se3 [PDF]
Antimony selenide (Sb2Se3) possesses great potential in the field of photovoltaics (PV) due to its suitable properties for use as a solar absorber and good prospects for scalability. Previous studies have reported the growth of a native antimony oxide (Sb2O3) layer at the surface of Sb2Se3 thin films during deposition and exposure to air, which can ...
Shiel, H +12 more
openaire +4 more sources
Energy band alignment at the nanoscale [PDF]
The energy band alignments at interfaces often determine the electrical functionality of a device. Along with the size reduction into the nanoscale, functional coatings become thinner than a nanometer. With the traditional analysis of the energy band alignment by in situ photoelectron spectroscopy, a critical film thickness is needed to determine the ...
Jonas Deuermeier +3 more
core +3 more sources
Theoretical band alignment in an intermediate band chalcopyrite based material [PDF]
Band alignment is key to enhance the performance of heterojunction for chalcopyrite thin film solar cells. In this paper we report ab initio calculations of the electronic structures of CuGaS2:Cr with various Cr compositions, CuAlSe2 and ZnSe and the band alignment between their interfaces.
Castellanos Águila, J.E. +4 more
openaire +3 more sources
Ferroelectric-tuned van der Waals heterojunction with band alignment evolution [PDF]
Band alignment engineering is important to realize high performance and multifunctionality in a specific van der Waals heterojunction. Here, the authors observe band alignment transition of the heterojunction in a ferroelectric-tuned van der Waals ...
Yan Chen +14 more
doaj +2 more sources
Electric-field tunable Type-I to Type-II band alignment transition in MoSe2/WS2 heterobilayers [PDF]
Semiconductor heterojunctions are ubiquitous components of modern electronics. Their properties depend crucially on the band alignment at the interface, which may exhibit straddling gap (type-I), staggered gap (type-II) or broken gap (type-III).
Jed Kistner-Morris +9 more
doaj +2 more sources
Investigation of Nitridation on the Band Alignment at MoS2/HfO2 Interfaces [PDF]
The effect of nitridation treatment on the band alignment between few-layer MoS2 and HfO2 has been investigated by X-ray photoelectron spectroscopy. The valence (conduction) band offsets of MoS2/HfO2 with and without nitridation treatment were determined
Ya-Wei Huan +6 more
doaj +2 more sources
BAND ALIGNMENT OF ULTRATHIN GIZO/SiO2/Si HETEROSTRUCTURE DETERMINED BY ELECTRON SPECTROSCOPY
Amorphous GaInZnO (GIZO) thin films are grown on SiO2/Si substrate by the RF magnetron sputtering method. By thecombination of measured band gaps from reflection energy loss spectroscopy (REELS) spectra and valence band fromX-ray photo-electron ...
Hee Jae Kang2 +2 more
doaj +1 more source
Dynamic Control of Band Alignment and Built‐In Potential in High Performance Self‐Powered InSe/SnS2 Van der Waals Photodetectors via Gas Molecular Physisorption [PDF]
Molecular physisorption provides a versatile strategy to dynamically tailor the optoelectronic properties of van der Waals (vdW) heterostructures, enabling extended carrier lifetimes, broadened spectral response, and erasable memory effects in self ...
Ze Cao +6 more
doaj +2 more sources
The energy band alignment between pulsed-laser-deposited TiO2 and FTO was firstly characterized using high-resolution X-ray photoelectron spectroscopy.
Haibo Fan +5 more
doaj +2 more sources

