Results 31 to 40 of about 177,978 (297)

Receiver alignment dependence of a GA controlled optical wireless transmitter [PDF]

, 2009
A genetic algorithm controlled multispot transmitter is demonstrated to be capable of optimizing the received power distribution for single element receivers in fully diffuse mobile indoor optical wireless systems.
Leeson, Mark S., Higgins, Matthew D., Green, Roger   +2 more
core   +1 more source

Computing with DFT Band Offsets at Semiconductor Interfaces: A Comparison of Two Methods

Nanomaterials, 2021
Two DFT-based methods using hybrid functionals and plane-averaged profiles of the Hartree potential (individual slabs versus vacuum and alternating slabs of both materials), which are frequently used to predict or estimate the offset between bands at ...
José C. Conesa
doaj   +1 more source

Hardware Architecture of a Beam Alignment Module for D-band Fronthaul and Backhaul

, 2023
International audience5G and 6G open the door to millimeter-wave wireless communications, in particular for fronthauling and backhauling applications. Narrow-beam antennas are needed in this context, and a constant adjustment of their beam direction is ...
Laurent, Johan, Cassiau, Nicolas
core   +1 more source

Research on the Influence of the Interfacial Properties Between a Cu3BiS3 Film and an InxCd1−xS Buffer Layer for Photoelectrochemical Water Splitting

Advanced Science, 2022
The ternary compound photovoltaic semiconductor Cu3BiS3 thin film‐based photoelectrode demonstrates a quite promising potential for photoelectrochemical hydrogen evolution.
Xiaomin Wu, Weidong Zhao, Yucheng Hu, Guohong Xiao, Huanyang Ni, Shigeru Ikeda, Yunhau Ng, Feng Jiang   +7 more
doaj   +1 more source

Universal Band Alignment Rule for Perovskite/Organic Heterojunction Interfaces

, 2023
In contrast with the band alignment rule governing conventional semiconductor heterojunctions, the Fermi level position (i.e., work function, ϕpsk) of the perovskite and the differences in ionization energies of the organics are shown to dictate the ...
Deying Luo (4005944), Peng Chen (6514), Juntao Hu (6394781), Shunde Li (7140485), Dengke Wang (1489669), Rui Zhu (305217), Zheng-Hong Lu (1326294), Nan Chen (142925)   +7 more
core   +1 more source

Interaction Mechanisms of Insensitive Explosive FOX-7 and Graphene Oxides from Ab Initio Calculations

Nanomaterials, 2019
Energetic material−graphene oxide (EM−GO) composites exhibit excellent thermal stability and insensitivity to mechanical stimuli. The interfacial interactions play an important role in affecting the structural and electrical properties of EM&#
Yan Su, Yuanze Sun, Jijun Zhao
doaj   +1 more source

Properties of Thermally Evaporated Titanium Dioxide as an Electron-Selective Contact for Silicon Solar Cells

Energies, 2020
Recently, titanium oxide has been widely investigated as a carrier-selective contact material for silicon solar cells. Herein, titanium oxide films were fabricated via simple deposition methods involving thermal evaporation and oxidation.
Changhyun Lee, Soohyun Bae, HyunJung Park, Dongjin Choi, Hoyoung Song, Hyunju Lee, Yoshio Ohshita, Donghwan Kim, Yoonmook Kang, Hae-Seok Lee   +9 more
doaj   +1 more source

Tuning band alignment at a semiconductor-crystalline oxide heterojunction via electrostatic modulation of the interfacial dipole [PDF]

, 2021
We demonstrate that the interfacial dipole associated with bonding across the SrTi O₃/Si heterojunction can be tuned through space charge, thereby enabling the band alignment to be altered via doping.
Zhu, Z., LeBeau, J. M., Spurgeon, SR, Chambers, S. A., Ramasse, QM, Ramasse, Q. M., Gabel, J, Lee, T.-L., Chrysler, M, Gray, AX, Ngai, J. H., Paudel, JR, Penn, A. N., Zhu, Z, LeBeau, JM, Spurgeon, S. R., Sah, RK, Lee, T. -L., Gray, A. X., Sah, R. K., Gabel, J., Kepaptsoglou, D. M., Ngai, JH, Matthews, BE, Grassi, JD, Sushko, P. V., Chambers, SA, Kepaptsoglou, DM, Paudel, J. R., Chrysler, M., Lee, T-L, Grassi, J. D., Sushko, PV, Penn, AN, Matthews, B. E.   +34 more
core   +1 more source

Investigation of energy band at atomic layer deposited AZO/β-Ga2O3 ( 2¯01 $$ \overline{2}01 $$) heterojunctions

Nanoscale Research Letters, 2019
The Al-doped effects on the band offsets of ZnO/β-Ga2O3 interfaces are characterized by X-ray photoelectron spectroscopy and calculated by first-principle simulations. The conduction band offsets vary from 1.39 to 1.67 eV, the valence band offsets reduce
Shun-Ming Sun, Wen-Jun Liu, Dmitriy Anatolyevich Golosov, Chen-Jie Gu, Shi-Jin Ding   +4 more
doaj   +1 more source

Band Alignments of GeS and GeSe Materials

Crystals, 2022
Here we present new findings of a comprehensive study of the fundamental physicochemical properties for GeS and GeSe in bulk form. UV and X-ray photoelectron spectroscopies (UPS/XPS) were employed for the experiments, which were carried out on in situ cleaned (100) surfaces free from contamination.
Miłosz Grodzicki, Agata K. Tołłoczko, Dominika Majchrzak, Detlef Hommel, Robert Kudrawiec   +4 more
openaire   +2 more sources