Results 1 to 10 of about 5,612 (167)
Valence band offset of InN/BaTiO3 heterojunction measured by X-ray photoelectron spectroscopy [PDF]
Nanoscale Research Letters, 2011 Zhanguo Wang +2 more
exaly +2 more sources
Electric fields and valence-band offsets at strained [111] heterojunctions [PDF]
Physical Review B, 1997 [111] ordered common atom strained layer superlattices (in particular the common anion GaSb/InSb system and the common cation InAs/InSb system) are investigated using the ab initio full potential linearized augmented plane wave (FLAPW) method.
Picozzi S +2 more
openaire +3 more sources
Band alignment of β-(AlxGa1−x)2O3 alloys via atomic solid-state energy scale approach
AIP Advances, 2020 We presented a simple estimation method for band alignment of semiconductor alloys based on the atomic solid-state energy (SSE) scale. Our method has the advantage that natural band alignment can be determined using the SSE and energy gap of materials ...
Yuichi Ota
doaj +1 more source
PbTe Quantum Dots and Engineering of the Energy Band Alignment in Photovoltaic Applications
Süleyman Demirel Üniversitesi Fen-Edebiyat Fakültesi Fen Dergisi, 2021 Lead telluride (PbTe) quantum dots, despite being considered as one of the most promising candidates for future photovoltaics owing to their higher multiple exciton generation yields, have received limited attention in solar cell designs due their less ...
Tuğba Hacıefendioğlu, Demet Asil
doaj +1 more source
Nanoscale Research Letters, 2018 The energy band alignment of ZnO/β-Ga2O3 ( 2¯01 $$ \overline{2}01 $$) heterojunction was characterized by X-ray photoelectron spectroscopy (XPS). The ZnO films were grown by using atomic layer deposition at various temperatures.
Shun-Ming Sun +6 more
doaj +1 more source
AIP Advances, 2020 An ab initio based scheme for the determination of the valence band offset between different III–V semiconductor systems is presented on the example of GaAs and Ga(AsSb) pseudomorphically strained to GaAs for Sb concentrations up to 37.5%.
Maria J. Weseloh +2 more
doaj +1 more source
Determination of band offsets at the Al:ZnO/Cu2SnS3 interface using X-ray photoelectron spectroscopy
AIP Advances, 2015 The Al:ZnO/Cu2SnS3 semiconductor heterojunction was fabricated. The structural and optical properties of the semiconductor materials were studied. The band offset at the Al:ZnO/Cu2SnS3 heterojunction was studied using X-ray photoelectron spectroscopy ...
Sandra Dias, S. B. Krupanidhi
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Investigation of the Energy Band at the Molybdenum Disulfide and ZrO2 Heterojunctions
Nanoscale Research Letters, 2018 The energy band alignment at the multilayer-MoS2/ZrO2 interface and the effects of CHF3 plasma treatment on the band offset were explored using x-ray photoelectron spectroscopy. The valence band offset (VBO) and conduction band offset (CBO) for the MoS2 /
Xinke Liu +11 more
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High-Quality SiO2/O-Terminated Diamond Interface: Band-Gap, Band-Offset and Interfacial Chemistry
Nanomaterials, 2022 Silicon oxide atomic layer deposition synthesis development over the last few years has open the route to its use as a dielectric within diamond electronics.
Jesús Cañas +6 more
doaj +1 more source
Band alignment of type I at (100)ZnTe/PbSe interface
AIP Advances, 2016 A junction of lattice-matched cubic semiconductors ZnTe and PbSe results in a band alignment of type I so that the narrow band gap of PbSe is completely within the wider band gap of ZnTe. The valence band offset of 0.27 eV was found, representing a minor
Igor Konovalov +2 more
doaj +1 more source