COMPUTER SIMULATION OF METAL-SEMICONDUCTOR AND SEMICONDUCTOR-SEMICONDUCTOR INTERFACES
A Si-Ge interatomic potential was used to calculate the energy difference between strained and unstrained Ge layers on Si(001) substrates as a function of the number of layers . From this we estimate the critical thickness for dislocation nucleation to be less than 12 layers .
Matthai, C., Ashu, P.
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Defect Reactions at Metal-Semiconductor and Semiconductor-Semiconductor Interfaces [PDF]
ABSTRACTA recently proposed, new approach to the problem of native defect formation in compound semiconductors is presented. The approach is based on the concept of amphoteric native defects. It is shown that the defect formation energy as well as structure and properties of simple native defects depend on the location of the Fermi level with respect ...
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Photo-thermoelastic diffusive waves with microconcentration in quantum-modified semiconductors. [PDF]
Mohammed AM +4 more
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Photoelectrochemical Immuno-Sensing via Plasmon-Induced Resonance Energy Transfer Mechanism. [PDF]
Bright J +5 more
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Application of Machine Learning in Predicting the Properties of Two-Dimensional Semiconductor Materials. [PDF]
Yang J, Tang L, Wang Y, Wen J, Chen W.
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Quantum-modified photo-thermoelastic wave propagation in semiconductors with temperature-dependent thermal conductivity. [PDF]
Alshalhoub S +5 more
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Effect of Exchange-Correlation Functionals on Schottky Barriers at Si/Metal Interfaces. [PDF]
Dovale-Farelo V, Choudhary K.
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Charge-transfer-activated SERS detection of methylene blue using an ultrastable, reliable, and highly sensitive semiconductor Fe<sub>3</sub>O<sub>4</sub>@C@TiO<sub>2</sub> nano-platform. [PDF]
Mai QD +8 more
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Hydrogel-Based Semiconductors: Principles, Types, and Emerging Applications. [PDF]
Bhuyan MM, Lee K, Jeong JH.
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Nitrogen-Vacancy Centers in Fluorescent Nanodiamonds: Emerging Applications from Healthcare Diagnostics to Semiconductor Metrology. [PDF]
Chang HC.
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