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COMPUTER SIMULATION OF METAL-SEMICONDUCTOR AND SEMICONDUCTOR-SEMICONDUCTOR INTERFACES

open access: yesLe Journal de Physique Colloques, 1990
A Si-Ge interatomic potential was used to calculate the energy difference between strained and unstrained Ge layers on Si(001) substrates as a function of the number of layers . From this we estimate the critical thickness for dislocation nucleation to be less than 12 layers .
Matthai, C., Ashu, P.
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Defect Reactions at Metal-Semiconductor and Semiconductor-Semiconductor Interfaces [PDF]

open access: yesMRS Proceedings, 1989
ABSTRACTA recently proposed, new approach to the problem of native defect formation in compound semiconductors is presented. The approach is based on the concept of amphoteric native defects. It is shown that the defect formation energy as well as structure and properties of simple native defects depend on the location of the Fermi level with respect ...
openaire   +2 more sources

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