Results 41 to 50 of about 128,968 (268)

Effect of tin on bandgap narrowing and optical properties of ZnO–Zn2SnO4 electrospun nanofibre composite

Journal of Taibah University for Science, 2020
The quest for improved visible light absorption in ZnO-based photocatalysts and photodetectors is a prevailing research problem. One method of solving this problem is by narrowing the band gap of this material well into the range of visible light energy.
Hakeem Sanya Bolarinwa, Michael Ugwu Onuu, Lukman Olalekan Animashaun, Samson Oluwagbemiga Alayande, Adeniyi Yisau Fasasi   +4 more
doaj   +1 more source

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

Advanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee, Sofía Cruces, Xiaohua Liu, Yang Chen, Vasilis A. Maroufidis, Janghyun Jo, Lukas Völkel, Dennis Braun, Michael Möller, Leon Brackmann, Holger Kalisch, Michael Heuken, Andrei Vescan, Rafal E. Dunin‐Borkowski, Joachim Mayer, Stefan Wiefels, Max C. Lemme   +16 more
wiley   +1 more source

Oxide Ceramics Large‐Scale Integration Devices to Mitigate Global Extreme Weather Due to Computers in the AI Era

International Journal of Ceramic Engineering & Science
One of the causes of global boiling, which has been inducing abnormal weather around the world, is the enormous power consumption of data centers, especially in arithmetic logic unit (ALU) operations and memory data transfers.
Shunpei Yamazaki, Tatsuya Onuki, Satoru Saito, Kazuki Tsuda, Hiromichi Godo, Takanori Matsuzaki, Koji Kusunoki, Yuto Yakubo, Hidekazu Miyairi, Ryota Hodo, Yasuhiro Jinbo, Fumito Isaka, Yuji Egi, Yoshinori Ando, Motomu Kurata, Tsutomu Murakawa, Takashi Shingu, Ryosuke Motoyoshi, Yosuke Tsukamoto, Yukinori Shima, Masami Jincho, Yasutaka Nakazawa, Masahiro Watanabe, Kayo Kumakura, Masataka Nakada, Ami Sato, Nobuharu Ohsawa, Kenichi Okazaki   +27 more
doaj   +1 more source

Optical 3-D Profilometry for Measuring Semiconductor Wafer Surfaces with Extremely Variant Reflectivities

Applied Sciences, 2019
A new surface profilometry technique is proposed for profiling a wafer surface with both diffuse and specular reflective properties. Most moiré projection scanning techniques using triangulation principle work effectively on diffuse reflective ...
Liang-Chia Chen, Duc-Hieu Duong, Chin-Sheng Chen   +2 more
doaj   +1 more source

Hydrothermal Preparation, Crystal Structure, Photoluminescence and UV-Visible Diffuse Reflectance Spectroscopic Properties of a Novel Mononuclear Zinc Complex

Acta Chimica Slovenica, 2020
A novel mononuclear zinc complex [ZnL(Phen)(H2O)]·H2O containing the mixed ligands of Phen (Phen = 1,10-phenanthroline) and 3-hydroxy-2-methylquinoline-4-carboxylic acid (HL) was prepared by hydrothermal synthesis and its crystal structure was ...
Xiu-Guang Yi, Xiao-Niu Fang, Jin Guo, Jia Li, Zhen-Ping Xie   +4 more
doaj   +1 more source

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

Advanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner, Dhananjeya Kumaar, Giacomo Torti, Killian Keller, Till Zellweger, Florian M. Schenk, Christoph Weilenmann, Daniel Chelladurai, Vara Prasad Jonnalagadda, Ghazi Sarwat Syed, Vanessa Wood, Jürg Leuthold, Alexandros Emboras, Maksym Yarema, Mathieu Luisier   +14 more
wiley   +1 more source

Metrology Challenges in 3D NAND Flash Technical Development and Manufacturing

Journal of Microelectronic Manufacturing, 2020
3D NAND technical development and manufacturing face many challenges to scale down their devices, and metrology stands out as much more difficult at each turn. Unlike planar NAND, 3D NAND has a three-dimensional vertical structure with high-aspect ratio.
Wei Zhang, Jun Xu, Sicong Wang, Yi Zhou, Jian Mi   +4 more
doaj   +1 more source

Oxygen‐Tunnel Indium Tin Oxide Vertical Channel Transistors with Enhanced Current Density and Reliability for Monolithic 3D Compute‐In‐Memory Systems

Advanced Functional Materials, EarlyView.
Oxygen‐tunnel (OT) indium tin oxide (ITO) vertical channel transistors (VCTs) enable reliable, high‐density gain‐cell memory for monolithic 3D integration. A sandwiched SiN/SiO2/SiN OT stack selectively regulates oxygen transport, suppressing parasitic electrode oxidation while stabilizing channel oxygen vacancies, thereby suppressing carrier injection
Hyeonho Gu, Haksoon Jung, Yongwoo Lee, Hoichang Jeong, Yanfeng Zhao, Heesoo Yang, Minho Park, Hyeonjin Lee, Seunghun Baek, Minju Song, Junghwan Kim, Youngmin Jo, Hyunjin Park, Munhyeon Kim, Jae‐Joon Kim, Kyuho Jason Lee, Byungjo Kim, Jimin Kwon   +17 more
wiley   +1 more source

Spin Injection Of Exciton–Polaritons With Halide Perovskites At Room Temperature

Advanced Functional Materials, EarlyView.
A monolithic Tamm‐plasmon microcavity embedding a two‐dimensional halide perovskite enables room‐temperature spin injection of exciton‐polaritons under quasi‐resonant optical excitation. Polarization‐resolved spectroscopy reveals partial preservation of the injected spin in the lower polariton branch, while bare excitons remain fully depolarized.
Elena Sendarrubias Arias‐Camisón, Maksim Lednev, Jorge Cuadra, Raúl Gago, Luis Viña, Francisco José García Vidal, Johannes Feist, Ferry Prins, Carlos Antón Solanas   +8 more
wiley   +1 more source

Fully Additive Vertical Organic Electrochemical Transistors on Renewable and Compostable Substrates Enable Ultrasensitive Bioelectronics

Advanced Functional Materials, EarlyView.
Fully additive vertical organic electrochemical transistors (vOECTs) with channel‐length of 226 nm on a 50 µm compostable substrate achieve >106 current modulation and ∼36 mS transconductance. Ion‐selective integration enables 1.1 mA dec−1 sensitivity and 36 µm detection limit, highlighting a scalable platform for sustainable electronics and ...
Giulia Frusconi, Samuele Lavelli, Zsolt M. Kovács‐Vajna, Fabrizio Torricelli   +3 more
wiley   +1 more source