Results 61 to 70 of about 788,298 (276)
Structural Aspects of Porphyrins for Functional Materials Applications
Porphyrinic compounds comprise a diverse group of materials which have in common the presence of one or more cyclic tetrapyrroles known as porphyrins in their molecular structures.
Lawrence P. Cook +2 more
doaj +1 more source
Based on the transfer-matrix method, we theoretically explore the transmission and reflection properties of light waves in a one-dimensional defective photonic crystal composed of superconductor (HgBa2Ca2Cu3O8+δ) and semiconductor (GaAs) layers.
Huisheng Wei +5 more
doaj +1 more source
Isotopically Controlled Semiconductors [PDF]
The following article is an edited transcript based on the David Turnbull Lecture given by Eugene E. Haller (University of California, Berkeley) at the 2005 Materials Research Society Fall Meeting in Boston on November 29, 2005. The David Turnbull Lectureship is awarded to recognize the career of a scientist who has made outstanding contributions to ...
openaire +5 more sources
A pore tuning strategy to amplify the multi‐site MOF‐SO2 interactions is proposed to achieve an enhanced trace SO2 capture and chemiresistive sensing in highly stable isostructural DMOFs by annelating benzene rings. This work provides a facile strategy to achieve tailor‐made stable MOF materials for specific multifunctional applications.
Shanghua Xing +9 more
wiley +1 more source
Graphite based Schottky diodes formed on Si, GaAs and 4H-SiC substrates
We demonstrate the formation of semimetal graphite/semiconductor Schottky barriers where the semiconductor is either silicon (Si), gallium arsenide (GaAs) or 4H-silicon carbide (4H-SiC).
A. F. Hebard +4 more
core +1 more source
Long-lived modulation of plasmonic absorption by ballistic thermal injection
Energy and charge transfer across metal-semiconductor interfaces are the fundamental driving forces for a broad range of applications, such as computing, energy harvesting, and photodetection. However, the exact roles and physical separation of these two
Caldwell, Joshua D. +11 more
core +1 more source
Ring and Linear Structures of CdTe Clusters
We report the results of an ab initio study of the linear and ring structures of cadmium telluride clusters [CdTe]n (CdnTen) n ≤ 10 within the generalized gradient approximation (GGA) and Purdue–Burke–Ernzerhof (PBE) parameterization with Hubbard ...
Andrii Kashuba +4 more
doaj +1 more source
Defect Reactions at Metal-Semiconductor and Semiconductor-Semiconductor Interfaces [PDF]
ABSTRACTA recently proposed, new approach to the problem of native defect formation in compound semiconductors is presented. The approach is based on the concept of amphoteric native defects. It is shown that the defect formation energy as well as structure and properties of simple native defects depend on the location of the Fermi level with respect ...
openaire +2 more sources
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone +11 more
wiley +1 more source
1380 nm VCSELs using surface-activated bonding of GaAs-based DBRs on a Ge substrate
A wafer-bonded vertical-cavity surface-emitting laser (VCSEL) was demonstrated by surface-activated bonding (SAB) of a GaAs-based distributed Bragg reflector (DBR) on a Ge substrate.
Tomomasa Watanabe +8 more
doaj +1 more source

