Results 61 to 70 of about 366,688 (312)
A novel mononuclear zinc complex [ZnL(Phen)(H2O)]·H2O containing the mixed ligands of Phen (Phen = 1,10-phenanthroline) and 3-hydroxy-2-methylquinoline-4-carboxylic acid (HL) was prepared by hydrothermal synthesis and its crystal structure was ...
Xiu-Guang Yi +4 more
doaj +1 more source
Edible electronics needs integrated logic circuits for computation and control. This work presents a potentially edible printed chitosan‐gated transistor with a design optimized for integration in circuits. Its implementation in integrated logic gates and circuits operating at low voltage (0.7 V) is demonstrated, as well as the compatibility with an ...
Giulia Coco +8 more
wiley +1 more source
Metrology Challenges in 3D NAND Flash Technical Development and Manufacturing
3D NAND technical development and manufacturing face many challenges to scale down their devices, and metrology stands out as much more difficult at each turn. Unlike planar NAND, 3D NAND has a three-dimensional vertical structure with high-aspect ratio.
Wei Zhang +4 more
doaj +1 more source
Control of Polarization and Polar Helicity in BiFeO3 by Epitaxial Strain and Interfacial Chemistry
In BiFeO3 thin films, the interplay of interfacial chemistry, electrostatics, and epitaxial strain is engineered to stabilize homohelicity in polarization textures at the domain scale. The synergistic use of a Bi2O2‐terminated Aurivillius buffer layer and a highly anisotropic compressive epitaxial strain offers new routes to control the polar‐texture ...
Elzbieta Gradauskaite +5 more
wiley +1 more source
Role of Intrinsic Electron Trapping in Negative Charging of Amorphous Alumina
Intrinsic electron trapping in amorphous Al2O3 is examined using hybrid‐DFT models spanning a wide density range. Both spontaneous and thermally activated trapping are identified, with pronounced spontaneous localization in dense, partly crystallized structures.
Jack W. Strand +5 more
wiley +1 more source
This paper characterizes the gain and the carrier density responses of a semiconductor optical amplifier (SOA). In order to achieve the switching functions in SOA-based optical switches, such as Symmetric Mach-Zehnder (SMZ), the effect of the input ...
Ghassemlooy, Zabih +11 more
core +1 more source
Impact of signal wavelength on the semiconductor opticalamplifier gain uniformity for high speed optical routers employing the segmentation model [PDF]
This paper investigates the impact of a train of input Gaussian pulses wavelength on semiconductor optical amplifier (SOA) gain uniformity for high speed applications. In high speed applications, the linear output gain of the input pulses is necessary in
Ghassemlooy, Zabih +11 more
core +1 more source
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa +19 more
wiley +1 more source
The frequency-temperature dependences of the probability of two-photon absorption (2PA), caused by transitions from the branch of light holes to the subband of spin-orbit splitting and linear-circular dichroism (LCD) associated with 2PA, as well as the ...
Rustam Y. Rasulov +5 more
doaj +1 more source
Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee +16 more
wiley +1 more source

