Results 81 to 90 of about 788,298 (276)

Fast‐Responding O2 Gas Sensor Based on Luminescent Europium Metal‐Organic Frameworks (MOF‐76)

open access: yesAdvanced Functional Materials, EarlyView.
Luminescent MOF‐76 materials based on Eu(III) and mixed Eu(III)/Y(III) show rapid and reversible changes in emission intensity in response to O2 with very short response times. The effect is based on triplet quenching of the linker ligands that act as photosensitizers. Average emission lifetimes of a few milliseconds turn out to be mostly unaffected by
Zhenyu Zhao   +5 more
wiley   +1 more source

Spin Hall effect transistor

open access: yes, 2010
Spin transistors and spin Hall effects have been two separate leading directions of research in semiconductor spintronics which seeks new paradigms for information processing technologies.
A. C. Irvine   +21 more
core   +1 more source

On the Theory of Two-Photon Intersubband Absorption and Linear-Circular Dichroism in Semiconductors of the A3B5 Type

open access: yesEast European Journal of Physics
The frequency-temperature dependences of the probability of two-photon absorption (2PA), caused by transitions from the branch of light holes to the subband of spin-orbit splitting and linear-circular dichroism (LCD) associated with 2PA, as well as the ...
Rustam Y. Rasulov   +5 more
doaj   +1 more source

Photoswitching Conduction in Framework Materials

open access: yesAdvanced Functional Materials, EarlyView.
This mini‐review summarizes recent advances in state‐of‐the‐art proton and electron conduction in framework materials that can be remotely and reversibly switched on and off by light. It discusses the various photoswitching conduction mechanisms and the strategies employed to enhance photoswitched conductivity.
Helmy Pacheco Hernandez   +4 more
wiley   +1 more source

Radiation hardening of metal-oxide semi-conductor (MOS) devices by boron [PDF]

open access: yes, 1974
Technique using boron effectively protects metal-oxide semiconductor devices from ionizing radiation without using shielding materials.
Danchenko, V.
core   +1 more source

MOFs and COFs in Electronics: Bridging the Gap between Intrinsic Properties and Measured Performance

open access: yesAdvanced Functional Materials, EarlyView.
Metal‐organic frameworks (MOFs) and covalent organic frameworks (COFs) hold promise for advanced electronics. However, discrepancies in reported electrical conductivities highlight the importance of measurement methodologies. This review explores intrinsic charge transport mechanisms and extrinsic factors influencing performance, and critically ...
Jonas F. Pöhls, R. Thomas Weitz
wiley   +1 more source

Modeling of graphene wrapped indium antimonide nanowire as thermo-optical waveguide

open access: yesMaterials Research Express
In this research work, the fiber modes supported by the graphene-wrapped indium antimonide nanowire have been examined theoretically. The indium antimonide (InSb) is a semiconductor material, which has temperature-sensitive optoelectronic properties.
Muhammad Sajid   +5 more
doaj   +1 more source

All-Inorganic Perovskite CsPb2Br5 Microsheets for Photodetector Application

open access: yesFrontiers in Physics, 2018
Lead-halide perovskites have emerged as one kind of important optoelectronic materials with excellent performance in photovoltaic and light-emitting diode applications.
Xiaosheng Tang   +8 more
doaj   +1 more source

The Effect of Purcell Cavities on the Lifetime of Thermally Activated Delayed Fluorescent Emitters

open access: yesAdvanced Functional Materials, EarlyView.
A pressing challenge to OLED displays and lighting is to balance high efficiency and long operational lifetime in the deep blue spectrum. The Purcell effect can reduce the triplet density and hence the probability for destructive energy‐driven triplet annihilation events that limit the OLED lifetime. Here we study of the Purcell effect on two different
Sritoma Paul   +4 more
wiley   +1 more source

Electron Spin Injection at a Schottky Contact

open access: yes, 2002
We investigate theoretically electrical spin injection at a Schottky contact between a spin-polarized electrode and a non-magnetic semiconductor.
A.F. Isakovic   +13 more
core   +1 more source

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