Results 81 to 90 of about 443,823 (306)

Defect Reactions at Metal-Semiconductor and Semiconductor-Semiconductor Interfaces [PDF]

MRS Proceedings, 1989
ABSTRACTA recently proposed, new approach to the problem of native defect formation in compound semiconductors is presented. The approach is based on the concept of amphoteric native defects. It is shown that the defect formation energy as well as structure and properties of simple native defects depend on the location of the Fermi level with respect ...
openaire   +2 more sources

Achieving High ON State Current through Ferroelectric Polarization‐Dependent Interfacial Resistance Switching in Undoped Orthorhombic HfO2 Films

Advanced Functional Materials, EarlyView.
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand, Nuno Estrócio, Ji S. Kim, Babak Bakhit, Marian C. Istrate, Corneliu Ghica, Tiago Rebelo, Nives Strkalj, Abin Varghese, Bernardo Almeida, Luís S. Marques, Bipin Rajendran, Judith L. MacManus‐Driscoll, José P. B. Silva   +13 more
wiley   +1 more source

Industrial application of atom probe tomography to semiconductor devices

, 2018
Advanced semiconductor devices offer a metrology challenge due to their small feature size, diverse composition and intricate structure. Atom probe tomography (APT) is an emerging technique that provides 3D compositional analysis at the atomic-scale; as ...
Giddings, A.D., Yeoh, W.K., Shimizu, Yasuo, Alexander Devin Giddings, Yasuo Shimizu, Shimizu, Y., Wilfried Vandervorst, Estivill, R., Yeoh, Wai Kong, Sebastian Koelling, Vandervorst, W., Inoue, K., Giddings, AD Devin, Koji Inoue, Kölling, S Sebastian, Estivill, Robert, Vandervorst, Wilfried, Robert Estivill, Wai Kong Yeoh, Inoue, Koji, Koelling, S.   +20 more
core   +1 more source

Electrode and Microstructure Dependence of Oxygen Diffusion in Ferroelectric Hafnium Zirconium Oxide Thin Films

Advanced Functional Materials, EarlyView.
Significant nanoscale oxygen diffusion coefficient variations are measured in ferroelectric hafnium zirconium oxide films with grain boundaries and electrode interfaces exhibiting values 104 times larger than the grain cores. Overall coefficients are 10X larger for films prepared with metal nitride electrodes compared to refractory metals. New insights
Liron Shvilberg, Thomas W. Pfeifer, Chuanzhen Zhou, Yong Kyu Choi, Duk‐Hyun Choe, Patrick E. Hopkins, Jon F. Ihlefeld   +6 more
wiley   +1 more source

Synthesis, structure, semiconductive and photoluminescent properties of [{Eu(NC5H4COOH)3(H2O)2}(1.5ZnCl4)•(2H2O)]n [PDF]

Journal of the Serbian Chemical Society, 2009
A novel bimetallic 4f–3d metal-isonicotinic acid inorganic–organic hybrid complex [{Eu(NC5H4COOH)3(H2O)2}(1.5ZnCl4)•(2H2O)]n (1) was synthesized via a hydrothermal reaction and structurally characterized by single-crystal X-ray diffraction.
YA-PING XU, U-YAN LUO, XIAO-NIU FANG, WEN-TONG CHEN   +3 more
doaj  

Advances in Sustainable and Wearable Textile Based Soft Robotics

Advanced Functional Materials, EarlyView.
This Review examines advances in wearable textile‐based soft robotics, focusing on sustainable materials, integrated sensing, and scalable actuation. It discusses manufacturing and system integration across healthcare, assistive robotics, prosthetics, and human–machine interfaces, and highlights key challenges in circular design, including life‐cycle ...
Zahir Abbas, Marzia Dulal, Sophia K. Novoselov, Victoria K. Novoselov, Kostya S. Novoselov, Shaila Afroj, Nazmul Karim   +6 more
wiley   +1 more source

Semicondutores heteroestruturados: uma abordagem sobre os principais desafios para a obtenção e aplicação em processos fotoquímicos ambientais e energéticos

Química Nova
Heterostructured semiconductors are materials with unique features formed by combination of two or more semiconductors with suitable interface between them.
Romero T. Bueno, Osmando F. Lopes, Kele T. G. Carvalho, Caue Ribeiro, Henrique A. J. L. Mourão   +4 more
doaj   +1 more source

Tunable supercurrent through semiconductor nanowires

, 2005
Nanoscale superconductor/semiconductor hybrid devices are assembled from indium arsenide semiconductor nanowires individually contacted by aluminum-based superconductor electrodes.
Dam, Van, J.A., Bakkers, EPAM Erik, Roest, A.L., Franceschi, S De, Kouwenhoven, L.P., Franceschi, De, S., Doh, Y-J, Dam, JA Van, Bakkers, E.P.A.M., Doh, Y.-J., Bakkers, E.P.A.M.; id_orcid, Roest, AL, Kouwenhoven, Leo P   +12 more
core   +1 more source

Optical Signature of Moiré Superlattices Formed by Twisted SrTiO3 Membranes

Advanced Functional Materials, EarlyView.
We discover optical signatures from bonded interfaces in twisted SrTiO3 moiré superlattices, including low‐frequency Raman vibrational modes and strong second‐harmonic generation, consistent with strong interlayer coupling inferred from cross‐sectional electron microscopy and ab initio calculations. ABSTRACT Moiré superlattices formed at the interfaces
T. A. M. Ragib Shahriar, Fumikazu Murakami, Xing He, Konnor Koons, Xinyan Li, Bumseop Kim, Shihan Qin, Varun Harbola, Jochen Mannhart, Yimo Han, Ruijuan Xu, Shengxi Huang, Andrew M. Rappe, Hanyu Zhu   +13 more
wiley   +1 more source

The Effect of Fin Structure in 5 nm FinFET Technology

Journal of Microelectronic Manufacturing, 2019
In 5 nm technology node, FinFET device performance is sensitive to the dimension of the device structure such as the fin profile. In this work, we simulate the influence of fin height and fin width to an n-type FinFET. We have found that an optimized fin
Enming Shang, Yu Ding, Wenqiao Chen, Shaojian Hu, Shoumian Chen   +4 more
doaj   +1 more source