Results 31 to 40 of about 128,968 (268)

Fabrication of Er3+/Yb3+ Co-Doped Bi5O7I Microsphere With Upconversion Luminescence and Enhanced Photocatalytic Activity for Bisphenol A Degradation

Frontiers in Chemistry, 2020
Er3+/Yb3+ co-doped Bi5O7I uniform porous microsphere photocatalysts were synthesized by a two-step chemical method, which possesses excellent photocatalytic performance and upconversion luminescence property.
Baowei Cao, Siwen Gong, Siyaka Mj Zubairu, Lingna Liu, Yunhua Xu, Lei Guo, Rui Dang, Gangqiang Zhu, Gangqiang Zhu   +8 more
doaj   +1 more source

Pressure Sensing of Symmetric Defect Photonic Crystals Composed of Superconductor and Semiconductor in Low-Temperature Environment

Crystals, 2023
We theoretically investigate the defect mode transmittance of light waves in superconductor–semiconductor photonic crystals and its pressure-sensing dependence.
Haiyang Hu, Xiaoling Chen, Miaomiao Zhao, Liyan Wang, Ming Fang, Dong Zhao   +5 more
doaj   +1 more source

Printed Integrated Logic Circuits Based on Chitosan‐Gated Organic Transistors for Future Edible Systems

Advanced Functional Materials, EarlyView.
Edible electronics needs integrated logic circuits for computation and control. This work presents a potentially edible printed chitosan‐gated transistor with a design optimized for integration in circuits. Its implementation in integrated logic gates and circuits operating at low voltage (0.7 V) is demonstrated, as well as the compatibility with an ...
Giulia Coco, Valerio Francesco Annese, Valerio Galli, Ilaria Penna, Debora Russo, Marina Veronesi, Rita Scarpelli, Stefania Sabella, Mario Caironi   +8 more
wiley   +1 more source

Uncertainty Assessment Framework for IGBT Lifetime Models. A Case Study of Solder-Free Modules

International Journal of Prognostics and Health Management
Insulated gate bipolar transistors (IGBTs) are ubiquitous semiconductor devices used in diverse electronic power applications. The reliability and lifetime assessment of IGBTs is intricate and influenced by different ageing processes.
Ander Zubizarreta, Markel Penalba, David Garrido, Unai Markina, Xabier Ibarrola, Jose Aizpurua   +5 more
doaj   +1 more source

Temperature Sensing Based on Defect Mode of One-Dimensional Superconductor-Semiconductor Photonic Crystals

Crystals, 2023
Based on the transfer-matrix method, we theoretically explore the transmission and reflection properties of light waves in a one-dimensional defective photonic crystal composed of superconductor (HgBa2Ca2Cu3O8+δ) and semiconductor (GaAs) layers.
Huisheng Wei, Xiaoling Chen, Dong Zhao, Miaomiao Zhao, Yang Wang, Pu Zhang   +5 more
doaj   +1 more source

Control of Polarization and Polar Helicity in BiFeO3 by Epitaxial Strain and Interfacial Chemistry

Advanced Functional Materials, EarlyView.
In BiFeO3 thin films, the interplay of interfacial chemistry, electrostatics, and epitaxial strain is engineered to stabilize homohelicity in polarization textures at the domain scale. The synergistic use of a Bi2O2‐terminated Aurivillius buffer layer and a highly anisotropic compressive epitaxial strain offers new routes to control the polar‐texture ...
Elzbieta Gradauskaite, Lilia Huynh, Natascha Gray, Quintin N. Meier, Marta D. Rossell, Morgan Trassin   +5 more
wiley   +1 more source

Electronic Properties of Atomic Layer Deposited HfO₂ Thin Films on InGaAs Compared to HfO₂/GaAs Semiconductors

Crystals
This paper demonstrates how the treatment of III-V semiconductor surface affects the number of defects and ensures the conformal growth of the high-k dielectric thin film.
Irving K. Cashwell, Donovan A. Thomas, Jonathan R. Skuza, Aswini K. Pradhan   +3 more
doaj   +1 more source

Structural Aspects of Porphyrins for Functional Materials Applications

Crystals, 2017
Porphyrinic compounds comprise a diverse group of materials which have in common the presence of one or more cyclic tetrapyrroles known as porphyrins in their molecular structures.
Lawrence P. Cook, Greg Brewer, Winnie Wong-Ng   +2 more
doaj   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Advanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme   +19 more
wiley   +1 more source

Ring and Linear Structures of CdTe Clusters

Quantum Reports
We report the results of an ab initio study of the linear and ring structures of cadmium telluride clusters [CdTe]n (CdnTen) n ≤ 10 within the generalized gradient approximation (GGA) and Purdue–Burke–Ernzerhof (PBE) parameterization with Hubbard ...
Andrii Kashuba, Ihor Semkiv, Myron Rudysh, Hryhorii Ilchuk, Pavlo Shchepanskyi   +4 more
doaj   +1 more source