Results 1 to 10 of about 61,860 (310)
Some of the next articles are maybe not open access.

On the band offsets of AlGaAs/GaAs and beyond

Microelectronics Reliability, 1987
openaire   +1 more source

High-Quality SiO2/O-Terminated Diamond Interface: Band-Gap, Band-Offset and Interfacial Chemistry. [PDF]

open access: goldNanomaterials (Basel), 2022
Silicon oxide atomic layer deposition synthesis development over the last few years has open the route to its use as a dielectric within diamond electronics.
Cañas J   +6 more
europepmc   +5 more sources

Open‐circuit voltage, fill factor, and heterojunction band offset in semiconductor diode solar cells [PDF]

open access: goldEcoMat, 2022
Semiconductor photovoltaics have been investigated for many years, and various materials and device architectures have been developed aiming for low cost and high efficiency.
Jizheng Wang
openalex   +2 more sources

First-Principles Study on Influences of Crystal Structure and Orientation on Band Offsets at the CdS/Cu2ZnSnS4Interface [PDF]

open access: goldInternational Journal of Photoenergy, 2012
Cu2ZnSnS4 (CZTS) has attracted much attention recently as an absorber layer material in a heterojunction solar cell. Using the first-principles method, we calculate the band offsets for the CdS/CZTS heterojunction.
Wujisiguleng Bao, M. Ichimura
openalex   +2 more sources

Design of Lattice-Matched InAs1-xSbx/Al1-yInySb Type-I Quantum Wells with Tunable Near-To Mid-Infrared Emission (2-5 μm): A Strain-Optimized Approach for Optoelectronic Applications. [PDF]

open access: yesNanomaterials (Basel)
We propose a strain-optimized design strategy for lattice-matched InAs1−xSbx/Al1−yInySb Type-I quantum wells (QWs) that emit across the near-to mid-infrared spectrum (2–5 µm). By combining elastic strain energy minimization with band offset calculations,
Villa-Martínez G, Mendoza-Álvarez JG.
europepmc   +2 more sources

Conduction Band Edge Energy Profile Probed by Hall Offset Voltage in InGaZnO Thin Films [PDF]

open access: goldMicromachines, 2020
We measured and analyzed the Hall offset voltages in InGaZnO thin-film transistors. The Hall offset voltages were found to decrease monotonously as the electron densities increased. We attributed the magnitude of the offset voltage to the misalignment in
Hyo‐Jun Joo   +3 more
openalex   +3 more sources

Band Offsets from Angle‐Resolved Valence Band Photoemission Spectroscopy

open access: yesAdvanced Materials Interfaces
Abstract The conduction band offset ϕ 0 at semiconductor surfaces and interfaces is a crucial parameter for quantum devices exploiting proximity‐induced collective states such as superconductivity and magnetism. Recently, a method combining angle‐resolved conduction band and
Procopios Constantinou   +11 more
openaire   +4 more sources

Terahertz Pulse Emission from Semiconductor Heterostructures Caused by Ballistic Photocurrents

open access: yesSensors, 2021
Terahertz radiation pulses emitted after exciting semiconductor heterostructures by femtosecond optical pulses were used to determine the electron energy band offsets between different constituent materials.
Vitaly Leonidovich Malevich   +5 more
doaj   +1 more source

Band Offsets, Optical Conduction, Photoelectric and Dielectric Dispersion in InSe/Sb2Te3 Heterojunctions [PDF]

open access: yesMaterials Research, 2021
InSe based heterojunction devices gain importance in optoelectronic applications in NIR range as multipurpose sensors. For this reason, InSe/Sb2Te3 heterojunctions are constructed as NIR sensors by the thermal evaporation technique.
Latifah Hamad Khalid Alfhaid   +2 more
doaj   +1 more source

Home - About - Disclaimer - Privacy