High-Quality SiO2/O-Terminated Diamond Interface: Band-Gap, Band-Offset and Interfacial Chemistry [PDF]
Nanomaterials, 2022 Silicon oxide atomic layer deposition synthesis development over the last few years has open the route to its use as a dielectric within diamond electronics.
Jesús Cañas +6 more
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Commutativity of the GaAs/AlAs (100) band offset [PDF]
Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, 1988 X-ray photoelectron spectroscopy is used to measure the valence-band offset in situ for GaAs/AlAs (100) heterojunctions grown by molecular beam epitaxy. Ga 3d and Al 2p core level to valence-band edge binding energy differences are measured in GaAs (100) and AlAs (100) samples, respectively, and the Al 2p to Ga 3d core level binding energy difference ...
Yu, E. T., Chow, D. H., McGill, T. C.
openaire +5 more sources
Design of Lattice-Matched InAs1−xSbx/Al1−yInySb Type-I Quantum Wells with Tunable Near-To Mid-Infrared Emission (2–5 μm): A Strain-Optimized Approach for Optoelectronic Applications [PDF]
NanomaterialsWe propose a strain-optimized design strategy for lattice-matched InAs1−xSbx/Al1−yInySb Type-I quantum wells (QWs) that emit across the near-to mid-infrared spectrum (2–5 µm). By combining elastic strain energy minimization with band offset calculations,
Gerardo Villa-Martínez +1 more
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Band Offsets from Angle‐Resolved Valence Band Photoemission Spectroscopy
Advanced Materials InterfacesThe conduction band offset ϕ0 at semiconductor surfaces and interfaces is a crucial parameter for quantum devices exploiting proximity‐induced collective states such as superconductivity and magnetism.
Procopios Constantinou +11 more
doaj +5 more sources
Terahertz Pulse Emission from Semiconductor Heterostructures Caused by Ballistic Photocurrents
Sensors, 2021 Terahertz radiation pulses emitted after exciting semiconductor heterostructures by femtosecond optical pulses were used to determine the electron energy band offsets between different constituent materials.
Vitaly Leonidovich Malevich +5 more
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Band Offsets, Optical Conduction, Photoelectric and Dielectric Dispersion in InSe/Sb2Te3 Heterojunctions [PDF]
Materials Research, 2021 InSe based heterojunction devices gain importance in optoelectronic applications in NIR range as multipurpose sensors. For this reason, InSe/Sb2Te3 heterojunctions are constructed as NIR sensors by the thermal evaporation technique.
Latifah Hamad Khalid Alfhaid +2 more
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Band alignment of β-(AlxGa1−x)2O3 alloys via atomic solid-state energy scale approach
AIP Advances, 2020 We presented a simple estimation method for band alignment of semiconductor alloys based on the atomic solid-state energy (SSE) scale. Our method has the advantage that natural band alignment can be determined using the SSE and energy gap of materials ...
Yuichi Ota
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Optimized Sample Adaptive Offset Filter in HEVC
Advances in Multimedia, 2022 The high-efficiency video coding (HEVC) standard incorporates sample adaptive offset (SAO) as an in-loop filtering technique to reduce distortion. The fundamental tenet of SAO is to classify every reconstructed pixel and then simply add the offset to ...
N. Archana +4 more
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Determination of band offsets at the Al:ZnO/Cu2SnS3 interface using X-ray photoelectron spectroscopy
AIP Advances, 2015 The Al:ZnO/Cu2SnS3 semiconductor heterojunction was fabricated. The structural and optical properties of the semiconductor materials were studied. The band offset at the Al:ZnO/Cu2SnS3 heterojunction was studied using X-ray photoelectron spectroscopy ...
Sandra Dias, S. B. Krupanidhi
doaj +1 more source
Nanoscale Research Letters, 2018 The energy band alignment of ZnO/β-Ga2O3 ( 2¯01 $$ \overline{2}01 $$) heterojunction was characterized by X-ray photoelectron spectroscopy (XPS). The ZnO films were grown by using atomic layer deposition at various temperatures.
Shun-Ming Sun +6 more
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