On the band offsets of AlGaAs/GaAs and beyond
Microelectronics Reliability, 1987openaire +1 more source
High-Quality SiO2/O-Terminated Diamond Interface: Band-Gap, Band-Offset and Interfacial Chemistry. [PDF]
Silicon oxide atomic layer deposition synthesis development over the last few years has open the route to its use as a dielectric within diamond electronics.
Cañas J +6 more
europepmc +5 more sources
Open‐circuit voltage, fill factor, and heterojunction band offset in semiconductor diode solar cells [PDF]
Semiconductor photovoltaics have been investigated for many years, and various materials and device architectures have been developed aiming for low cost and high efficiency.
Jizheng Wang
openalex +2 more sources
First-Principles Study on Influences of Crystal Structure and Orientation on Band Offsets at the CdS/Cu2ZnSnS4Interface [PDF]
Cu2ZnSnS4 (CZTS) has attracted much attention recently as an absorber layer material in a heterojunction solar cell. Using the first-principles method, we calculate the band offsets for the CdS/CZTS heterojunction.
Wujisiguleng Bao, M. Ichimura
openalex +2 more sources
Design of Lattice-Matched InAs1-xSbx/Al1-yInySb Type-I Quantum Wells with Tunable Near-To Mid-Infrared Emission (2-5 μm): A Strain-Optimized Approach for Optoelectronic Applications. [PDF]
We propose a strain-optimized design strategy for lattice-matched InAs1−xSbx/Al1−yInySb Type-I quantum wells (QWs) that emit across the near-to mid-infrared spectrum (2–5 µm). By combining elastic strain energy minimization with band offset calculations,
Villa-Martínez G, Mendoza-Álvarez JG.
europepmc +2 more sources
Conduction Band Edge Energy Profile Probed by Hall Offset Voltage in InGaZnO Thin Films [PDF]
We measured and analyzed the Hall offset voltages in InGaZnO thin-film transistors. The Hall offset voltages were found to decrease monotonously as the electron densities increased. We attributed the magnitude of the offset voltage to the misalignment in
Hyo‐Jun Joo +3 more
openalex +3 more sources
Band Offsets from Angle‐Resolved Valence Band Photoemission Spectroscopy
Abstract The conduction band offset ϕ 0 at semiconductor surfaces and interfaces is a crucial parameter for quantum devices exploiting proximity‐induced collective states such as superconductivity and magnetism. Recently, a method combining angle‐resolved conduction band and
Procopios Constantinou +11 more
openaire +4 more sources
High-sensitivity and fast-response solar-blind photodetectors via band offset engineering for motion tracking. [PDF]
Wang H +8 more
europepmc +3 more sources
Terahertz Pulse Emission from Semiconductor Heterostructures Caused by Ballistic Photocurrents
Terahertz radiation pulses emitted after exciting semiconductor heterostructures by femtosecond optical pulses were used to determine the electron energy band offsets between different constituent materials.
Vitaly Leonidovich Malevich +5 more
doaj +1 more source
Band Offsets, Optical Conduction, Photoelectric and Dielectric Dispersion in InSe/Sb2Te3 Heterojunctions [PDF]
InSe based heterojunction devices gain importance in optoelectronic applications in NIR range as multipurpose sensors. For this reason, InSe/Sb2Te3 heterojunctions are constructed as NIR sensors by the thermal evaporation technique.
Latifah Hamad Khalid Alfhaid +2 more
doaj +1 more source

