Results 21 to 30 of about 61,860 (310)

A Block Ramp Errors Correction Method of Planet Subpixel Offset: Application to the 2018 Mw 7.5 Palu Earthquake, Indonesia

open access: yesIEEE Access, 2019
Planet optical images have a short revisit period and high spatial resolution, so they have great potential in surface offset monitoring. However, few studies have focused on the error source analysis and accuracy improvement in the offset field of ...
Zhixiong Feng   +6 more
doaj   +1 more source

Relationship between band-offset, gate leakage current, and interface states density at SiO2/4H-SiC (000-1) interface

open access: yesAIP Advances, 2019
We investigated the relationship between the band-offset, the gate leakage current, and the interface states density on SiO2/4H-SiC (000-1) structures via hard x-ray photoelectron spectroscopy and electrical measurements.
Efi Dwi Indari   +5 more
doaj   +1 more source

Nanowired structure, optical properties and conduction band offset of RF magnetron-deposited n-Si\In2O3:Er films.

open access: yesMaterials Research Express, 2020
RF magnetron-deposited Si\In _2 O _3 :Er films have the structure of the single-crystalline bixbyite bcc In _2 O _3 nanowires bunched into the columns extended across the films. The obtained films have a typical In _2 O _3 optical band gap of 3.55 eV and
K V Feklistov   +14 more
doaj   +1 more source

The (Glg)ABCs of cyanobacteria: modelling of glycogen synthesis and functional divergence of glycogen synthases in Synechocystis sp. PCC 6803

open access: yesFEBS Letters, EarlyView.
We reconstituted Synechocystis glycogen synthesis in vitro from purified enzymes and showed that two GlgA isoenzymes produce glycogen with different architectures: GlgA1 yields denser, highly branched glycogen, whereas GlgA2 synthesizes longer, less‐branched chains.
Kenric Lee   +3 more
wiley   +1 more source

Band offsets for pseudomorphic InP/GaAs

open access: yesApplied Physics Letters, 1989
Recently determined band-edge hydrostatic deformation potentials are used to predict heterojunction band offsets for the pseudomorphic GaAs-InP system. The calculations include GaAs/InP, InP/GaAs, and strained-layer GaAs-InP superlattices for both [100] and [111] oriented epitaxial growth. The offsets are type II for the unstrained case.
openaire   +2 more sources

The SrTiO3/BiFeO3 (001) interface: commutativity of energy band discontinuities

open access: yesNew Journal of Physics, 2013
The interface formation between the perovskite oxides SrTiO _3 and BiFeO _3 was studied using in situ photoelectron spectroscopy by depositing BiFeO _3 on SrTiO _3 and vice versa via pulsed laser deposition.
R Schafranek   +4 more
doaj   +1 more source

Transferrin receptor 1‐mediated iron uptake supports thermogenic activation in human cervical‐derived adipocytes

open access: yesFEBS Letters, EarlyView.
In this study, we found that human cervical‐derived adipocytes maintain intracellular iron level by regulating the expression of iron transport‐related proteins during adrenergic stimulation. Melanotransferrin is predicted to interact with transferrin receptor 1 based on in silico analysis.
Rahaf Alrifai   +9 more
wiley   +1 more source

Band offsets in ITO/Ga2O3 heterostructures [PDF]

open access: yesApplied Surface Science, 2017
Abstract The valence band offsets in rf-sputtered Indium Tin Oxide (ITO)/single crystal β-Ga2O3 (ITO/Ga2O3) heterostructures were measured with X-Ray Photoelectron Spectroscopy using the Kraut method. The bandgaps of the component materials in the heterostructure were determined by Reflection Electron Energy Loss Spectroscopy as 4.6 eV for Ga2O3 and ...
Department of Chemical Engineering, University of Florida, Gainesville FL 32611 USA, USA ( host institution )   +7 more
openaire   +2 more sources

Critical review of band offset determination by X-ray photoelectron spectroscopy for the heterojunctions on diamond substrates

open access: yesFunctional Diamond
Valence band offsets (VBO) of heterojunctions can be determined by X-ray photoelectron spectroscopy (XPS) directly. XPS VBO determinations for heterojunctions on diamond substrates have been reported by many workers for the last decades. We have reviewed
Shozo Kono
doaj   +1 more source

Electronic band structure of InAs/InAsSb type-II superlattice for HOT LWIR detectors

open access: yesResults in Physics, 2018
The InAs/InAs1−xSbx type-II superlattices (T2SLs) grown on GaSb buffer layer and GaAs substrates have recently been applied for detectors for long wavelength infrared (LWIR) range and high operating temperature (HOT) conditions.
T. Manyk   +5 more
doaj   +1 more source

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