Results 11 to 20 of about 61,860 (310)
Commutativity of the GaAs/AlAs (100) band offset [PDF]
Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, 1988 X-ray photoelectron spectroscopy is used to measure the valence-band offset in situ for GaAs/AlAs (100) heterojunctions grown by molecular beam epitaxy. Ga 3d and Al 2p core level to valence-band edge binding energy differences are measured in GaAs (100) and AlAs (100) samples, respectively, and the Al 2p to Ga 3d core level binding energy difference ...
Yu, E. T., Chow, D. H., McGill, T. C.
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Band alignment of β-(AlxGa1−x)2O3 alloys via atomic solid-state energy scale approach
AIP Advances, 2020 We presented a simple estimation method for band alignment of semiconductor alloys based on the atomic solid-state energy (SSE) scale. Our method has the advantage that natural band alignment can be determined using the SSE and energy gap of materials ...
Yuichi Ota
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Optimized Sample Adaptive Offset Filter in HEVC
Advances in Multimedia, 2022 The high-efficiency video coding (HEVC) standard incorporates sample adaptive offset (SAO) as an in-loop filtering technique to reduce distortion. The fundamental tenet of SAO is to classify every reconstructed pixel and then simply add the offset to ...
N. Archana +4 more
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Band offset in (Ga, In)As/Ga(As, Sb) heterostructures [PDF]
Journal of Applied Physics, 2016 A series of (Ga, In)As/GaAs/Ga(As, Sb) multi-quantum well heterostructures is analyzed using temperature- and power-dependent photoluminescence (PL) spectroscopy. Pronounced PL variations with sample temperature are observed and analyzed using microscopic many-body theory and band structure calculations based on the k⋅p method.
S. Gies +7 more
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Determination of band offsets at the Al:ZnO/Cu2SnS3 interface using X-ray photoelectron spectroscopy
AIP Advances, 2015 The Al:ZnO/Cu2SnS3 semiconductor heterojunction was fabricated. The structural and optical properties of the semiconductor materials were studied. The band offset at the Al:ZnO/Cu2SnS3 heterojunction was studied using X-ray photoelectron spectroscopy ...
Sandra Dias, S. B. Krupanidhi
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Nanoscale Research Letters, 2018 The energy band alignment of ZnO/β-Ga2O3 ( 2¯01 $$ \overline{2}01 $$) heterojunction was characterized by X-ray photoelectron spectroscopy (XPS). The ZnO films were grown by using atomic layer deposition at various temperatures.
Shun-Ming Sun +6 more
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Band alignment of type I at (100)ZnTe/PbSe interface
AIP Advances, 2016 A junction of lattice-matched cubic semiconductors ZnTe and PbSe results in a band alignment of type I so that the narrow band gap of PbSe is completely within the wider band gap of ZnTe. The valence band offset of 0.27 eV was found, representing a minor
Igor Konovalov +2 more
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Investigation of the Energy Band at the Molybdenum Disulfide and ZrO2 Heterojunctions
Nanoscale Research Letters, 2018 The energy band alignment at the multilayer-MoS2/ZrO2 interface and the effects of CHF3 plasma treatment on the band offset were explored using x-ray photoelectron spectroscopy. The valence band offset (VBO) and conduction band offset (CBO) for the MoS2 /
Xinke Liu +11 more
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Predicting band offset of lattice matched ZnO and BeCdO heterojunction from first principles
Materials Research Letters, 2019 Using first-principles approach, we calculated the band gaps of wurtzite $ {\rm Be}_{1-x} $ Cd $ _x{\rm O} $ ternary alloy and the band offset of the lattice matched $ {\rm ZnO}/{\rm Be}_{0.44}{\rm Cd}_{0.56}{\rm O}[1\,1\,\overline {2}\,0 ...
Xiaojie Liu +7 more
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Band Structure Extraction at Hybrid Narrow‐Gap Semiconductor–Metal Interfaces
Advanced Science, 2021 The design of epitaxial semiconductor–superconductor and semiconductor–metal quantum devices requires a detailed understanding of the interfacial electronic band structure.
Sergej Schuwalow +13 more
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