Results 1 to 10 of about 210,237 (219)

Temperature-dependent characteristics for the p-type CuO gate HEMT and high-k HfO2 MIS-HEMT on the Si substrates

open access: yesAIP Advances, 2021
This work presents the temperature-dependent characteristics of the thin-barrier Al0.45Ga0.55N/GaN high electron mobility transistor (HEMT), p-type CuO gate HEMT, and high-k HfO2 metal–insulator–semiconductor HEMT (MIS-HEMT).
Yaopeng Zhao   +7 more
doaj   +1 more source

Superior Pseudocapacitive Storage of a Novel Ni3Si2/NiOOH/Graphene Nanostructure for an All-Solid-State Supercapacitor

open access: yesNano-Micro Letters, 2020
Recent developments in the synthesis of graphene-based structures focus on continuous improvement of porous nanostructures, doping of thin films, and mechanisms for the construction of three-dimensional architectures.
Jing Ning   +6 more
doaj   +1 more source

High temperature stability of H-diamond high frequency MOSFET with 300°C grown Al2O3 dielectric

open access: yesFunctional Diamond, 2023
The high frequency H-diamond metal-oxide-semiconductor field effect transistors (MOSFETs) were fabricated on single diamond substrate using 300°C ALD grown Al2O3 as gate dielectric and passivation layer.
Ma Yuanchen   +8 more
doaj   +1 more source

Tungsten-Modulated Molybdenum Selenide/Graphene Heterostructure as an Advanced Electrode for All-Solid-State Supercapacitors

open access: yesNanomaterials, 2021
Transition metal dichalcogenides (TMDs) have attracted widespread attention due to their excellent electrochemical and catalytic properties. In this work, a tungsten (W)-modulated molybdenum selenide (MoSe2)/graphene heterostructure was investigated for ...
Qixian Liu   +8 more
doaj   +1 more source

Ge N-Channel MOSFETs with ZrO2 Dielectric Achieving Improved Mobility

open access: yesNanoscale Research Letters, 2021
High-mobility Ge nMOSFETs with ZrO2 gate dielectric are demonstrated and compared against transistors with different interfacial properties of ozone (O3) treatment, O3 post-treatment and without O3 treatment.
Lulu Chou   +7 more
doaj   +1 more source

All‐in‐One Compression and Encryption Engine Based on Flexible Polyimide Memristor

open access: yesSmall Science, 2023
It is anticipated that the rapid development of the Internet of Things (IoT) will improve the quality of human life. Nonetheless, large amounts of data need to be replicated, stored, processed, and shared, posing formidable challenges to communication ...
Rui Wang   +11 more
doaj   +1 more source

Flexible Nanocomposite Conductors for Electromagnetic Interference Shielding

open access: yesNano-Micro Letters, 2023
Highlights Convincing candidates of flexible (stretchable/compressible) electromagnetic interference shielding nanocomposites are discussed in detail from the views of fabrication, mechanical elasticity and shielding performance.
Ze Nan   +4 more
doaj   +1 more source

Improved Performance of GaN-Based Ultraviolet LEDs with the Stair-like Si-Doping n-GaN Structure

open access: yesCrystals, 2021
A method to improve the performance of ultraviolet light-emitting diodes (UV-LEDs) with stair-like Si-doping GaN layer is investigated. The high-resolution X-ray diffraction shows that the UV-LED with stair-like Si-doping GaN layer possesses better ...
Xiaomeng Fan   +8 more
doaj   +1 more source

The Investigation of Hybrid PEDOT:PSS/β-Ga2O3 Deep Ultraviolet Schottky Barrier Photodetectors

open access: yesNanoscale Research Letters, 2020
In this paper, the hybrid β-Ga2O3 Schottky diodes were fabricated with PEDOT:PSS as the anode. The electrical characteristics were investigated when the temperature changes from 298 K to 423 K.
Tao Zhang   +16 more
doaj   +1 more source

ZrO x Negative Capacitance Field-Effect Transistor with Sub-60 Subthreshold Swing Behavior

open access: yesNanoscale Research Letters, 2021
Here we report the ZrO x -based negative capacitance (NC) FETs with 45.06 mV/decade subthreshold swing (SS) under ± 1 V V GS range, which can achieve new opportunities in future voltage-scalable NCFET applications.
Siqing Zhang   +5 more
doaj   +1 more source

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