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Wide Band Gap Chalcogenide Semiconductors [PDF]
Chemical Reviews, 2020 Wide band gap semiconductors are essential for today's electronic devices and energy applications due to their high optical transparency, as well as controllable carrier concentration and electrical conductivity. There are many categories of materials that can be defined as wide band gap semiconductors. The most intensively investigated are transparent
Rachel Woods-Robinson +6 more
semanticscholar +9 more sources
Lithographic band gap tuning in photonic band gap crystals [PDF]
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 1996 We describe the lithographic control over the spectral response of three-dimensional photonic crystals. By precise microfabrication of the geometry using a reproducible and reliable procedure consisting of electron beam lithography followed by dry etching, we have shifted the conduction band of crystals within the near-infrared.
Cheng, C. C. +3 more
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Low Band Gap Conjugated Semiconducting Polymers
Advanced Materials & Technologies, 2021 Important parameters of an organic semiconductor material are the electronic band gap (Eg) and the position of highest occupied and lowest unoccupied bands versus vacuum.
M. Scharber, N. S. Sariçiftçi
semanticscholar +1 more source
AIP Advances, 2021 This work presents the temperature-dependent characteristics of the thin-barrier Al0.45Ga0.55N/GaN high electron mobility transistor (HEMT), p-type CuO gate HEMT, and high-k HfO2 metal–insulator–semiconductor HEMT (MIS-HEMT).
Yaopeng Zhao +7 more
doaj +1 more source
Energy band-gap engineering of graphene nanoribbons. [PDF]
Physical Review Letters, 2007 We investigate electronic transport in lithographically patterned graphene ribbon structures where the lateral confinement of charge carriers creates an energy gap near the charge neutrality point.
Melinda Y. Han +3 more
semanticscholar +1 more source
Nano-Micro Letters, 2020 Recent developments in the synthesis of graphene-based structures focus on continuous improvement of porous nanostructures, doping of thin films, and mechanisms for the construction of three-dimensional architectures.
Jing Ning +6 more
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Nanomaterials, 2021 Transition metal dichalcogenides (TMDs) have attracted widespread attention due to their excellent electrochemical and catalytic properties. In this work, a tungsten (W)-modulated molybdenum selenide (MoSe2)/graphene heterostructure was investigated for ...
Qixian Liu +8 more
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Silicon Nanowire Band Gap Modification [PDF]
Nano Letters, 2006 Band gap modification for small-diameter (1 nm) silicon nanowires resulting from the use of different species for surface termination is investigated by density functional theory calculations. Because of quantum confinement, small-diameter wires exhibit a direct band gap that increases as the wire diameter narrows, irrespective of surface termination ...
Nolan, Michael +4 more
openaire +3 more sources
High temperature stability of H-diamond high frequency MOSFET with 300°C grown Al2O3 dielectric
Functional Diamond, 2023 The high frequency H-diamond metal-oxide-semiconductor field effect transistors (MOSFETs) were fabricated on single diamond substrate using 300°C ALD grown Al2O3 as gate dielectric and passivation layer.
Ma Yuanchen +8 more
doaj +1 more source
Ge N-Channel MOSFETs with ZrO2 Dielectric Achieving Improved Mobility
Nanoscale Research Letters, 2021 High-mobility Ge nMOSFETs with ZrO2 gate dielectric are demonstrated and compared against transistors with different interfacial properties of ozone (O3) treatment, O3 post-treatment and without O3 treatment.
Lulu Chou +7 more
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