Results 41 to 50 of about 5,212,798 (338)

H-diamond MOS interface properties and FET characteristics with high-temperature ALD-grown HfO2 dielectric

open access: yesAIP Advances, 2021
The performance of hydrogen-terminated diamond MOSFETs with a large gate–drain interspace (LGD) was analyzed on a polycrystalline diamond sample. A 300 °C atomic layer deposition grown (ALD-grown) HfO2 dielectric (28 nm) was used the gate dielectric and ...
Zeyang Ren   +10 more
doaj   +1 more source

Direct band-gap crossover in epitaxial monolayer boron nitride

open access: yesNature Communications, 2019
Hexagonal boron nitride is a large band-gap insulating material which complements the electronic and optical properties of graphene and the transition metal dichalcogenides.
C. Elias   +11 more
semanticscholar   +1 more source

Germanium Negative Capacitance Field Effect Transistors: Impacts of Zr Composition in Hf1−x Zr x O2

open access: yesNanoscale Research Letters, 2019
Germanium (Ge) negative capacitance field-effect transistors (NCFETs) with various Zr compositions in Hf1−x Zr x O2 (x = 0.33, 0.48, and 0.67) are fabricated and characterized. For each Zr composition, the NCFET exhibits the sudden drop in some points of
Yue Peng   +4 more
doaj   +1 more source

Finite element method analysis of band gap and transmission of two-dimensional metallic photonic crystals at terahertz frequencies [PDF]

open access: yes, 2013
Photonic band gap and transmission characteristics of 2D metallic photonic crystals at THz frequencies have been investigated using finite element method (FEM).
Degirmenci, Elif, Landais, Pascal
core   +1 more source

Effects of Post Annealing on Electrical Performance of Polycrystalline Ga2O3 Photodetector on Sapphire

open access: yesNanoscale Research Letters, 2020
Effects of post annealing on the physical and electrical properties of solar-blind polycrystalline gallium oxide (Ga2O3) ultraviolet photodetectors on the sapphire substrate are investigated.
Haodong Hu   +9 more
doaj   +1 more source

Dual-band wearable textile antenna on an EBG substrate [PDF]

open access: yes, 2009
Performance of a dual-band coplanar patch antenna integrated with an electromagnetic band gap substrate is described. The antenna structure is made from common clothing fabrics and operates at the 2.45 and 5 GHz wireless bands. The design of the coplanar
Langley, R., Zhu, S.Z.
core   +1 more source

Photonic band gaps [PDF]

open access: yesPhysics World, 1992
Many major discoveries in physics this century originate from the study of waves in periodic structures. Examples include X-ray and electron diffraction by crystals, electronic band structure and holography. Analogies between disciplines have also led to fruitful new avenues of research.
openaire   +3 more sources

Ab-initio calculations of the Optical band-gap of TiO2 thin films

open access: yes, 2004
Titanium dioxide has been extensively studied in recent decades for its important photocatalytic application in environmental purification. The search for a method to narrow the optical band-gap of TiO2 plays a key role for enhancing its photocatalytic ...
ASUKA TERAI   +11 more
core   +1 more source

Comprehensive Study and Optimization of Implementing p-NiO in β-Ga2O3 Based Diodes via TCAD Simulation

open access: yesCrystals, 2021
In this paper, we carried out a comprehensive study and optimization of implementing p-NiO in the β-Ga2O3 based diodes, including Schottky barrier diode (SBD) with p-NiO guard ring (GR), p-NiO/β-Ga2O3 heterojunction (HJ) barrier Schottky (HJBS) diode ...
Hong Zhou   +7 more
doaj   +1 more source

Vacancy induced energy band gap changes of semiconducting zigzag single walled carbon nanotubes

open access: yes, 2017
In this work, we have examined how the multi-vacancy defects induced in the horizontal direction change the energetics and the electronic structure of semiconducting Single-Walled Carbon Nanotubes (SWCNTs).
Dereli, G.   +2 more
core   +2 more sources

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