Results 31 to 40 of about 284,732 (318)
Effect of thermoelastic damping on silicon, GaAs, diamond and SiC micromechanical resonators
AIP Advances, 2017 The effect of thermoelastic damping as a main dissipation mechanism in single crystalline silicon, GaAs, diamond, SiC and SiO2 micromechanical resonators are studied.
Garuma Abdisa Denu +4 more
doaj +1 more source
Creating Band Gaps in Periodic Media [PDF]
Multiscale Modeling & Simulation, 2017 We identify explicit conditions on geometry and material contrast for creating band gaps in 2-d photonic and 3-d acoustic crystals. This approach is novel and makes use of the electro-static and quasi-periodic source free resonances of the crystal.
Robert Lipton 0001, Robert Viator Jr.
openaire +2 more sources
Analytical Model for the Channel Maximum Temperature in Ga2O3 MOSFETs
Nanoscale Research Letters, 2021 In this work, we proposed an accurate analytical model for the estimation of the channel maximum temperature of Ga2O3 MOSFETs with native or high-thermal-conductivity substrates.
Xiaole Jia +4 more
doaj +1 more source
Comparative Study of Negative Capacitance Field-Effect Transistors with Different MOS Capacitances
Nanoscale Research Letters, 2019 We demonstrate the negative capacitance (NC) effect of HfZrOx-based field-effect transistors (FETs) in the experiments. Improved I DS, SS, and G m of NCFET have been achieved in comparison with control metal oxide semiconductor (MOS) FET.
Jing Li +4 more
doaj +1 more source
AIP Advances, 2021 The performance of hydrogen-terminated diamond MOSFETs with a large gate–drain interspace (LGD) was analyzed on a polycrystalline diamond sample. A 300 °C atomic layer deposition grown (ALD-grown) HfO2 dielectric (28 nm) was used the gate dielectric and ...
Zeyang Ren +10 more
doaj +1 more source
Understanding of sub-band gap absorption of femtosecond-laser sulfur hyperdoped silicon using synchrotron-based techniques [PDF]
, 2015 The correlation between sub-band gap absorption and the chemical states and electronic and atomic structures of S-hyperdoped Si have been extensively studied, using synchrotron-based x-ray photoelectron spectroscopy (XPS), x-ray absorption near-edge ...
J. W. Chiou +16 more
core +1 more source
Germanium Negative Capacitance Field Effect Transistors: Impacts of Zr Composition in Hf1−x Zr x O2
Nanoscale Research Letters, 2019 Germanium (Ge) negative capacitance field-effect transistors (NCFETs) with various Zr compositions in Hf1−x Zr x O2 (x = 0.33, 0.48, and 0.67) are fabricated and characterized. For each Zr composition, the NCFET exhibits the sudden drop in some points of
Yue Peng +4 more
doaj +1 more source
Band-gap energies and strain effects in CuIn1-xGaxS2 based solar cells
, 2007 The optical properties of CuIn1 amp; 8209;xGaxS2 CIGS polycrystalline films and solar cells were optically characterized by room and low 20 K temperature Photo PR and Electroreflectance ER spectroscopy for two different compositions of the CIGS ...
Manolakos, D.E. +11 more
core +1 more source
Nanoscale Research Letters, 2020 Effects of post annealing on the physical and electrical properties of solar-blind polycrystalline gallium oxide (Ga2O3) ultraviolet photodetectors on the sapphire substrate are investigated.
Haodong Hu +9 more
doaj +1 more source
Doping cuprous oxide with fluorine and its band gap narrowing
, 2017 Phase-pure cuprous oxide (Cu2O) thin films doped with Fluorine (F) have been prepared under thermal diffusion at diffusion temperatures of 1123 K and 1223 K and it is found that higher diffusion temperature leads to larger grain size.
Roy, V.A.L. +23 more
core +1 more source