Results 1 to 10 of about 89,887 (235)
NanomaterialsFeedback field-effect transistors (FBFETs) have been studied to obtain near-zero subthreshold swings at 300 K with a high on/off current ratio ~1010. However, their structural complexity, such as an epitaxy process after an etch process for a Si channel ...
Seung-Mo Kim +8 more
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Nature Communications, 2020 Negative capacitance (NC) effects that could allow steep subthreshold swing (SS) in field-effect transistors (FETs) are still controversially discussed.
Xiuyan Li, Akira Toriumi
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IEEE Journal of the Electron Devices Society, 2015 The corresponding energy landscape and surface potential are deduced from the experimental ferroelectricity of HfZrO2 (HZO) for low-power steep-slope transistor applications.
Min Hung Lee +11 more
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Gate engineering solutions to mitigate short channel effects in a 20 nm MOSFET
e-Prime: Advances in Electrical Engineering, Electronics and EnergyThis work presents a promising approach to addressing scaling challenges in advanced MOSFET technology. It proposes a novel MOSFET structure designed to enhance electrical performance by introducing asymmetry in the gate dielectric thickness.
Ahmed S. Al-Jawadi +2 more
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High performance MoS2 TFT using graphene contact first process
AIP Advances, 2017 An ohmic contact of graphene/MoS2 heterostructure is determined by using ultraviolet photoelectron spectroscopy (UPS). Since graphene shows a great potential to replace metal contact, a direct comparison of Cr/Au contact and graphene contact on the MoS2 ...
Chih-Shiang Chang Chien +5 more
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Analysis of Subthreshold Swing for Oxide Thickness and Doping Distribution in DGMOSFET [PDF]
The Journal of the Korean Institute of Information and Communication Engineering, 2011 In this paper, the relationship of potential and charge distribution in channel for double gate(DG) MOSFET has been derived from Poisson's equation using Gaussian function. The relationship of subthreshold swing and oxide thickness has been investigated according to variables of doping distribution using Gaussian function, i.e.
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IEEE Journal of the Electron Devices Society, 2018 Ferroelectric-Hf1-xZrxO2 FETs on silicon on insulator (SOI) are modeled and demonstrated with improvement on subthreshold swing (SS) and hysteresis (VT-shift), which is based on the capacitance matching concept.
Kuan-Ting Chen +14 more
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A new line tunneling SiGe/Si iTFET with control gate for leakage suppression and subthreshold swing improvement. [PDF]
Discov Nano, 2023 Lin JT, Weng SC.
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A two-dimensional analytical model for short channel junctionless double-gate MOSFETs
AIP Advances, 2015 A physics-based analytical model of electrostatic potential for short-channel junctionless double-gate MOSFETs (JLDGMTs) operated in the subthreshold regime is proposed, in which the full two-dimensional (2-D) Poisson’s equation is solved in channel ...
Chunsheng Jiang +3 more
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Steep Subthreshold Swing and Enhanced Illumination Stability InGaZnO Thin-Film Transistor by Plasma Oxidation on Silicon Nitride Gate Dielectric. [PDF]
Membranes (Basel), 2021 Liu Y +6 more
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