Results 41 to 50 of about 5,282 (241)

Oxygen‐Tunnel Indium Tin Oxide Vertical Channel Transistors with Enhanced Current Density and Reliability for Monolithic 3D Compute‐In‐Memory Systems

Advanced Functional Materials, EarlyView.
Oxygen‐tunnel (OT) indium tin oxide (ITO) vertical channel transistors (VCTs) enable reliable, high‐density gain‐cell memory for monolithic 3D integration. A sandwiched SiN/SiO2/SiN OT stack selectively regulates oxygen transport, suppressing parasitic electrode oxidation while stabilizing channel oxygen vacancies, thereby suppressing carrier injection
Hyeonho Gu, Haksoon Jung, Yongwoo Lee, Hoichang Jeong, Yanfeng Zhao, Heesoo Yang, Minho Park, Hyeonjin Lee, Seunghun Baek, Minju Song, Junghwan Kim, Youngmin Jo, Hyunjin Park, Munhyeon Kim, Jae‐Joon Kim, Kyuho Jason Lee, Byungjo Kim, Jimin Kwon   +17 more
wiley   +1 more source

High drain field impact ionization transistors as ideal switches

Nature Communications
Impact ionization effect has been demonstrated in transistors to enable sub-60 mV dec−1 subthreshold swing. However, traditionally, impact ionization in silicon devices requires a high operation voltage due to limited electrical field near the device ...
Baowei Yuan, Zhibo Chen, Yingxin Chen, Chengjie Tang, Weiao Chen, Zengguang Cheng, Chunsong Zhao, Zhaozhao Hou, Qiang Zhang, Weizhuo Gan, Jiacheng Gao, Jiale Wang, Jeffrey Xu, Guangxi Hu, Zhenhua Wu, Kun Luo, Mingyan Luo, Yuanbo Zhang, Zengxing Zhang, Shisheng Xiong, Chunxiao Cong, Wenzhong Bao, Shunli Ma, Jing Wan, Peng Zhou, Ye Lu   +25 more
doaj   +1 more source

Investigation on Tunneling-based Ternary CMOS with Ferroelectric-Gate Field Effect Transistor Using TCAD Simulation

Applied Sciences, 2020
Ternary complementary metal-oxide-semiconductor technology has been spotlighted as a promising system to replace conventional binary complementary metal-oxide-semiconductor (CMOS) with supply voltage (VDD) and power scaling limitations.
Kitae Lee, Sihyun Kim, Daewoong Kwon, Byung-Gook Park   +3 more
doaj   +1 more source

Solution‐Processed Two‐Dimensional Indium Oxide on Sodium‐Embedded Alumina for Reconfigurable Optoelectronic Synaptic Transistors

Advanced Functional Materials, EarlyView.
Wafer‐scale two‐dimensioanl In2Se3 oxidized into InOx on sodium‐embedded beta‐alumina enables multifunctional reconfigurable electronics. Sodium ions accumulate within distinct spatial distribution under drain‐controlle and gate‐controlled operation. Drain‐control operation gives controllability of ultraviolet‐driven optoelectronic synaptic conductance
Jinhong Min, Yonghyun Albert Kwon, Hyunbin Kim, Jihyun Kim, Myeongjin Jung, Jaewon Heo, Gwang Ya Kim, Vlastimil Mazanek, Zdeněk Sofer, In Soo Kim, Jeong Ho Cho, Hyesung Park, Sang Min Won, Joohoon Kang   +13 more
wiley   +1 more source

Ferroelectric Quantum Dots for Retinomorphic In‐Sensor Computing

Advanced Materials, EarlyView.
This work has provided a protocol for fabricating retinomorphic phototransistors by integrating ferroelectric ligands with quantum dots. The resulting device combines ferroelectricity, optical responsiveness, and low‐power operation to enable adaptive signal amplification and high recognition accuracy under low‐light conditions, while supporting ...
Tingyu Long, Huanyu Zhou, Jaewan Ko, Hongwei Tan, Jaemin Lim, Yanfei Zhao, Daehan Kang, Eojin Yoon, Gyeong‐Tak Go, Somin Kim, Seung‐Woo Lee, Chan‐Yul Park, Hyojun Choi, Hyeran Kim, Hyung Joong Yun, Sung Hyuk Park, Kwan Sik Park, Jeong Woo Park, Mungeun Kim, Yong Soo Cho, Ho Won Jang, Wenqiang Yang, Min Hyuk Park, Wan Ki Bae, Sebastiaan van Dijken, Joona Bang, Tae‐Woo Lee   +26 more
wiley   +1 more source

First Demonstration of Ultra-Thin SiGe-Channel Junctionless Accumulation-Mode (JAM) Bulk FinFETs on Si Substrate with PN Junction-Isolation Scheme

IEEE Journal of the Electron Devices Society, 2014
A SiGe-channel junctionless-accumulation-mode (JAM) PMOS bulk FinFETs were successfully demonstrated on Si substrate with PN junction-isolation scheme for the first time.
Dong-Hyun Kim, Tae Kyun Kim, Young Gwang Yoon, Byeong-Woon Hwang, Yang-Kyu Choi, Byung Jin Cho, Seok-Hee Lee   +6 more
doaj   +1 more source

A 3-D analytical physically based model for the subthreshold swing in undoped trigate FinFETs

, 2007
An analytical physically based analysis for undoped FinFET devices in the subthreshold and near-threshold regimes has been developed by solving the 3-D Poisson equation, in which the mobile-charge term was included.
Guitart, Jaume Roig, El Hamid, Hamdy Abd, Flandre, Denis, Iniguez, Benjamin, Kilchytska, Valeria   +4 more
core   +1 more source

Physics-Based and Closed-Form Model for Cryo-CMOS Subthreshold Swing

, 2023
Cryogenic semiconductor device models are essential in designing control systems for quantum devices and in benchmarking the benefits of cryogenic cooling for high-performance computing.
Hiblot, Gaspard, Bardon, Marie Garcia, Govoreanu, Bogdan, Michl, Jakob, Garcia Bardon, Marie, Hellings, Geert, Beckers, Arnout, De Greve, Kristiaan, Parvais, Bertrand, Kaczer, Ben, Grill, Alexander   +10 more
core   +1 more source

Neuromorphic Electronics for Intelligence Everywhere: Emerging Devices, Flexible Platforms, and Scalable System Architectures

Advanced Materials, EarlyView.
The perspective presents an integrated view of neuromorphic technologies, from device physics to real‐time applicability, while highlighting the necessity of full‐stack co‐optimization. By outlining practical hardware‐level strategies to exploit device behavior and mitigate non‐idealities, it shows pathways for building efficient, scalable, and ...
Kapil Bhardwaj, Roshni Satheesh Babu, Yuxin Xia, Eva Bestelink, Radu Sporea, Nikos Hastas, Ioannis Zeimpekis, Dimitra G. Georgiadou, Sayani Majumdar   +8 more
wiley   +1 more source

Nonvolatile ferroelectric field-effect transistors

Nature Communications, 2020
There is growing interest in non-traditional materials for logic applications. Here, the authors demonstrate a domain device architecture based on ferroelectric LiNbO3 crystals with gate voltage controlled transistor without subthreshold swing and source
Xiaojie Chai, Jun Jiang, Qinghua Zhang, Xu Hou, Fanqi Meng, Jie Wang, Lin Gu, David Wei Zhang, An Quan Jiang   +8 more
doaj   +1 more source