Results 21 to 30 of about 2,685 (210)

ZnO/graphene ambipolar transistor with low sub-threshold swing

Materials Research Express, 2021
We reported on enhanced device performance of ambipolar thin-film transistors (TFTs) with hybrid channel of Zinc oxide (ZnO) and multi-layer graphene (MLG), especially in reduced sub-threshold swing characteristics and increased carrier mobilities for ...
Byeong-Hyeok Kim, Sang-Hyun Hong, Jang-Won Kang   +2 more
doaj   +1 more source

A Steep-Slope Transistor Combining Phase-Change and Band-to-Band-Tunneling to Achieve a sub-Unity Body Factor

Scientific Reports, 2017
Steep-slope transistors allow to scale down the supply voltage and the energy per computed bit of information as compared to conventional field-effect transistors (FETs), due to their sub-60 mV/decade subthreshold swing at room temperature.
Wolfgang A. Vitale, Emanuele A. Casu, Arnab Biswas, Teodor Rosca, Cem Alper, Anna Krammer, Gia V. Luong, Qing-T. Zhao, Siegfried Mantl, Andreas Schüler, A. M. Ionescu   +10 more
doaj   +1 more source

Ferroelectric gate tunnel field-effect transistors with low-power steep turn-on

AIP Advances, 2014
Using a ferroelectric PbZrTiO3 gate stack, the range of the steep subthreshold swing in tunnel field-effect transistors was extended by 3.5 orders of magnitude demonstrating an improvement in the swing (by approximately double the slope).
M. H. Lee, Y.-T. Wei, J.-C. Lin, C.-W. Chen, W.-H. Tu, M. Tang   +5 more
doaj   +1 more source

Novel Quantum Structure of an III-V Tunneling Field-Effect Transistor with Source and Channel Heterojunction

Holos, 2020
In this work, an III-V tunneling field-effect transistor (TFET) with source and channel heterojunctions is proposed and introduced. Proposed structure combine the high tunneling efficiency induced by heterojunction material and the high mobility of III-V
Masoud Sabaghi
doaj   +1 more source

Low-Power OR Logic Ferroelectric In-Situ Transistor Based on a CuInP₂S₆/MoS₂ Van Der Waals Heterojunction

Nanomaterials, 2021
Due to the limitations of thermodynamics, the Boltzmann distribution of electrons hinders the further reduction of the power consumption of field-effect transistors.
Kun Yang, Shulong Wang, Tao Han, Hongxia Liu   +3 more
doaj   +1 more source

Investigation of Channel Doping Concentration and Reverse Boron Penetration on P-Type Pi-Gate Poly-Si Junctionless Accumulation Mode FETs

IEEE Journal of the Electron Devices Society, 2018
In this paper, the influence of channel doping concentration and reverse boron penetration on p-type Pi-gate (PG) poly-Si junctionless accumulation mode (JAM) FETs has been experimentally investigated and discussed. Effective carrier concentration (Neff)
Dong-Ru Hsieh, Yi-De Chan, Po-Yi Kuo, Tien-Sheng Chao   +3 more
doaj   +1 more source

A temperature dependent analytical model & performance evaluation of triple-material dielectric-pocket gate-all-around MOSFET

Discover Applied Sciences
In current article, an analytical model of a Triple-Material Dielectric-Pocket Gate-All-Around (TM-DP-GAA) MOSFET has been presented for elevated temperature conditions. The numerical model of surface potential has been developed for temperatures ranging
Neeraj Gupta, Rashmi Gupta, Rekha Yadav, Prashant Kumar, Lalit Rai   +4 more
doaj   +1 more source

Could the negative capacitance effect be used in field-effect transistors with a ferroelectric gate?

Фізика і хімія твердого тіла, 2022
We analyze the electric potential and field, polarization and charge, and differential capacitance of a silicon metal-oxide-ferroelectric field effect transistor (MOSFET), in which a gate insulator consists of thin layers of dielectric SiO2 and weak ...
E. A. Eliseev, A. N. Morozovska, L. P. Yurchenko, M. V. Strikha   +3 more
doaj   +1 more source

Oxygen‐Tunnel Indium Tin Oxide Vertical Channel Transistors with Enhanced Current Density and Reliability for Monolithic 3D Compute‐In‐Memory Systems

Advanced Functional Materials, EarlyView.
Oxygen‐tunnel (OT) indium tin oxide (ITO) vertical channel transistors (VCTs) enable reliable, high‐density gain‐cell memory for monolithic 3D integration. A sandwiched SiN/SiO2/SiN OT stack selectively regulates oxygen transport, suppressing parasitic electrode oxidation while stabilizing channel oxygen vacancies, thereby suppressing carrier injection
Hyeonho Gu, Haksoon Jung, Yongwoo Lee, Hoichang Jeong, Yanfeng Zhao, Heesoo Yang, Minho Park, Hyeonjin Lee, Seunghun Baek, Minju Song, Junghwan Kim, Youngmin Jo, Hyunjin Park, Munhyeon Kim, Jae‐Joon Kim, Kyuho Jason Lee, Byungjo Kim, Jimin Kwon   +17 more
wiley   +1 more source

High drain field impact ionization transistors as ideal switches

Nature Communications
Impact ionization effect has been demonstrated in transistors to enable sub-60 mV dec−1 subthreshold swing. However, traditionally, impact ionization in silicon devices requires a high operation voltage due to limited electrical field near the device ...
Baowei Yuan, Zhibo Chen, Yingxin Chen, Chengjie Tang, Weiao Chen, Zengguang Cheng, Chunsong Zhao, Zhaozhao Hou, Qiang Zhang, Weizhuo Gan, Jiacheng Gao, Jiale Wang, Jeffrey Xu, Guangxi Hu, Zhenhua Wu, Kun Luo, Mingyan Luo, Yuanbo Zhang, Zengxing Zhang, Shisheng Xiong, Chunxiao Cong, Wenzhong Bao, Shunli Ma, Jing Wan, Peng Zhou, Ye Lu   +25 more
doaj   +1 more source