Results 21 to 30 of about 86,211 (240)
Micromachines, 2020 Label-free biomolecular sensors have been widely studied due to their simple operation. L-shaped tunneling field-effect transistors (LTFETs) are used in biosensors due to their low subthreshold swing, off-state current, and power consumption.
Chen Chong +4 more
doaj +1 more source
Structure-Dependent Subthreshold Swings for Double-gate MOSFETs
Journal of information and communication convergence engineering, 2011 In this paper, subthreshold swing characteristics have been presented for double-gate MOSFETs, using the analytical model based on series form of potential distribution. Subthreshold swing is very important factor for digital devices because of determination of ON and OFF. In general, subthreshold swings have to be under 100mV/dec. The channel length L
Ji-Hyeong Han +2 more
openaire +3 more sources
Characterization and Modeling of 28-nm Bulk CMOS Technology Down to 4.2 K
IEEE Journal of the Electron Devices Society, 2018 This paper presents an experimental investigation, compact modeling, and low-temperature physics-based modeling of a commercial 28-nm bulk CMOS technology operating at cryogenic temperatures. The physical and technological parameters are extracted at 300,
Arnout Beckers +2 more
doaj +1 more source
ZnO/graphene ambipolar transistor with low sub-threshold swing
Materials Research Express, 2021 We reported on enhanced device performance of ambipolar thin-film transistors (TFTs) with hybrid channel of Zinc oxide (ZnO) and multi-layer graphene (MLG), especially in reduced sub-threshold swing characteristics and increased carrier mobilities for ...
Byeong-Hyeok Kim +2 more
doaj +1 more source
Scientific Reports, 2017 Steep-slope transistors allow to scale down the supply voltage and the energy per computed bit of information as compared to conventional field-effect transistors (FETs), due to their sub-60 mV/decade subthreshold swing at room temperature.
Wolfgang A. Vitale +10 more
doaj +1 more source
The Impact of Tunneling on the Subthreshold Swing in Sub-20 nm Asymmetric Double Gate MOSFETs [PDF]
, 2016 This paper analyzes the subthreshold swing in asymmetric double gate MOSFETs with sub-20 nm channel lengths. The analysis of the carrier transport in the subthreshold region of these nano scaled MOSFET includes tunneling as an important additional ...
Jung, Hak Kee +5 more
core +1 more source
Impact of Band-Tails on the Subthreshold Swing of III-V Tunnel Field-Effect Transistor [PDF]
, 2017 We present a simple model to evaluate the sharpness of the band edges for tunnel field-effect transistors by comparing the subthreshold swing and the conductance in the negative differential resistance region.
M. Hellenbrand +14 more
core +1 more source
Swing-up control of inverted pendulum systems. [PDF]
, 1996 In Part I a technique for the swing-up control of single inverted pendulum system is presented. The requirement is to swing-up a carriage mounted pendulum system from its natural pendent position to its inverted position.
Shao, Jindi, Bradshaw, Alan
core +4 more sources
Ferroelectric gate tunnel field-effect transistors with low-power steep turn-on
AIP Advances, 2014 Using a ferroelectric PbZrTiO3 gate stack, the range of the steep subthreshold swing in tunnel field-effect transistors was extended by 3.5 orders of magnitude demonstrating an improvement in the swing (by approximately double the slope).
M. H. Lee +5 more
doaj +1 more source
Holos, 2020 In this work, an III-V tunneling field-effect transistor (TFET) with source and channel heterojunctions is proposed and introduced. Proposed structure combine the high tunneling efficiency induced by heterojunction material and the high mobility of III-V
Masoud Sabaghi
doaj +1 more source