Results 11 to 20 of about 86,211 (240)
Resonant spike propagation in coupled neurons with subthreshold activity [PDF]
, 2008 Màster en Biofísica, curs 2006-2007Chemical coupling between neurons is only active when the presynaptic neuron is firing, and thus it does not allow for the propagation of subthreshold activity.
Sancristóbal Alonso, Belén
core +6 more sources
Comparisons between swing phase characteristics of race walkers and distance runners [PDF]
, 2013 The aim of this study was to analyze swing characteristics during race walking and to compare these with distance running. The rules of race walking demand that no visible flight time should occur and the stance leg must be straightened from initial ...
Smith, LC, Hanley, B
core +9 more sources
Nanomaterials, 2023 The use of a two-dimensional (2D) van der Waals (vdW) metal-semiconductor (MS) heterojunction as an efficient cold source (CS) has recently been proposed as a promising approach in the development of steep-slope field-effect transistors (FETs).
Juan Lyu, Jian Gong
doaj +1 more source
Subthreshold FIR Filter Architecture for Ultra Low Power Applications [PDF]
, 2008 Subthreshold design has been proposed as an effective technique for designing signal processing circuits needed in wireless sensor nodes powered by sources with limited energy.
M. Al-Hashimi, Bashir, Mishra, Biswajit
core +2 more sources
IEEE Journal of the Electron Devices Society, 2021 Subthreshold swing (SS) in a silicon gate-all-around (GAA) nanowire MOSFET with zero body factor is examined from room temperature (RT) down to 4 K. A fully depleted (FD) SOI MOSFET is also evaluated.
Shohei Sekiguchi +5 more
doaj +1 more source
Analysis of subthreshold swing in junctionless double gate MOSFET using stacked high-k gate oxide [PDF]
, 2021 In this paper, the subthreshold swing was observed when the stacked high-k gate oxide was used for a junctionless double gate (JLDG) MOSFET. For this purpose, a subthreshold swing model was presented using the series-type potential model derived from the
Jung, Hakkee, Hakkee Jung
core +1 more source
Discover Nano, 2023 In this paper, we propose an inductive line tunneling FET using Epitaxial Tunnel Layer with Ge-Source and Charge Enhancement Insulation (CEI ETL GS-iTFET).
Jyi-Tsong Lin, Yen-Chen Chang
doaj +1 more source
In-Line Tunnel Field Effect Transistor: Drive Current Improvement
IEEE Journal of the Electron Devices Society, 2018 A new architecture of tunnel field effect transistor (TFET) with in-line (vertical) tunneling area is introduced. By adding the vertical tunneling area, the in-line TFET architecture outperformed the normal TFET in terms of the drive current, the ...
Woojin Park +3 more
doaj +1 more source
EFFECT OF FERRO ELECTRIC THICKNESS ON NEGATIVE CAPACITANCE FET (NCFET)
International Islamic University Malaysia Engineering Journal, 2020 Conventional Field Effect Transistor (FET) are well known to require at least 60mV/decade at 300K change in the channel potential to change the current by a factor of 10. Due to this, 60mV/decade becomes the bottleneck of this day transistor.
Muhaimin Bin Mohd Hashim +2 more
doaj +1 more source
Improvement of Tunnel Field Effect Transistor Performance Using Auxiliary Gate and Retrograde Doping in the Channel [PDF]
Journal of Electrical and Computer Engineering Innovations, 2018 Background and Objectives: In this work, a dual workfunction gate-source pocket-retrograde doping-tunnel field effect transistor (DWG SP RD-TFET) is proposed and investigated.Methods: The dual workfunction gate-source pocket-retrograde doping-tunnel ...
M. Karbalaei, D. Dideban, N. Moezi
doaj +1 more source