Results 51 to 60 of about 5,282 (241)

Label‐Free Detection of a Neurotransmitter Using an Aptamer‐Functionalized Amorphous IGZO Transistor

Advanced Materials Interfaces, EarlyView.
An aptamer‐functionalized amorphous IGZO thin‐film transistor enables label‐free electrical detection of the neurotransmitter serotonin under liquid‐gated operation. Stepwise surface functionalization ensures stable biomolecule integration and efficient electrostatic coupling.
Ngoc Thanh Ho, Sina Jamali, Nam‐Trung Nguyen, Tuan‐Khoa Nguyen   +3 more
wiley   +1 more source

The Influence of Gate Scaling to Electrical Characteristics on n-MOS FinFET

MATEC Web of Conferences, 2017
This paper investigates effects from gate scaling in Tri-gate FinFET structure by simulation method, to avoid problems and improve a structure to be good prototype. The experiments used GTS framework for simulation.
Patchrasardtra Nuttapong, Pengchan Weera
doaj   +1 more source

Investigation of TFETs with Vertical Tunneling Path for Low Average Subthreshold Swing

, 2017
In this paper we analyze the capabilities in terms of average subthreshold swing and on-current of Si0.50Ge0.50/Si heterostructure n-TFETs with vertical tunneling path, utilizing an air bridge design to minimize source-drain leakage.
S. Glass, Strangio, Sebastiano, Sebastiano Strangio, Glass, Stefan, Q.-T. Zhao, von den Driesch, Nils, C. Schulte-Braucks, S. Mantl, Mantl, Siegfried, Zhao, Qing-Tai, D. Buca, Schulte-Braucks, Christian, Rieger, Torsten, N. von den Driesch, S. Strangio, Q. T. Zhao, T. Rieger, Buca, Dan Mihai   +17 more
core   +1 more source

Low‐Temperature Processed Optoelectronic Synapses With Enhanced Responsivity for Edge‐Oriented In‐Sensor Reservoir Computing

Advanced Materials Technologies, EarlyView.
Image pixels are converted into optical pulse sequences to stimulate the optoelectronic synaptic device, generating dynamic responses that form high‐dimensional features. These features improve classification efficiency and demonstrate strong potential for neuromorphic edge computing systems.
Jo‐Lin Chen, Shi‐Qian Guo, Yu‐Chuan Chiu, Po‐Tsun Liu   +3 more
wiley   +1 more source

DC ANALYSIS OF p-n-p-n TUNNELING FIELD-EFFECT TRANSISTOR BASED ON In0.35Ga0.65As

Holos, 2018
Using calibrated simulations, we report the In0.35Ga0.65As based tunnel field-effect transistor (TFET) with thin δ-doped n+ pocket at the source-channel interface to improve the parameters such as  on current (Ion), off-current (Ioff) and subthreshold ...
Behnam Dorostkar, Saeid Marjani
doaj   +1 more source

Analytical Model for Subthreshold Swing and Threshold Voltage of Surrounding Gate Metal–Oxide–Semiconductor Field-Effect Transistors

, 2011
We investigate analytically the metal–oxide–semiconductor field-effect transistor (MOSFET) with a surrounding gate (SG). We develop and present an analytical model for subthreshold swing and threshold voltage.
Shuyan Hu, Tingao Tang, Guangxi Hu, Guanghui Mei, Ran Liu, Jinglun Gu   +5 more
core   +1 more source

Enhancing Small Molecule Sensing With Aptameric Functionalized Nano Devices

Advanced Materials Technologies, EarlyView.
Unveiling an ultra‐sensitive, non‐invasive neurotransmitter sensor. For the first time, a nanoscale sensor for detecting an important neurotransmitter was demonstrated using micro‐electromechanical systems (MEMS) technology. Our approach utilized field‐effect transistor (FET)‐based readout to enable pico‐molar detection of biomarkers in sweat.
Thi Thanh Ha Nguyen, Cong Minh Nguyen, Quang Thang Trinh, Minh Anh Huynh, Khanh Vinh Ho, Dang Co Pham, Dzung Dao, Sven Ingebrandt, Sina Jamali, Xuan Thang Vu, Nam‐Trung Nguyen, Tuan‐Khoa Nguyen   +11 more
wiley   +1 more source

FinFET Mismatch in Subthreshold Region: Theory and Experiments

, 2010
In this paper, we study the drain-current mismatch of FinFETs in subthreshold, from both modeling and experimental point of view. We propose a simple model that takes into account the effect of threshold voltage and subthreshold swing fluctuations and ...
Mercha A., Lander R. J. P., Magnone P, MAGNONE, PAOLO, Andricciola P, Tuinhout H, Crupi F, Tuinhout H., Lander R J P, Crupi F., Andricciola P., Mercha A   +11 more
core   +1 more source

Magnetoelectric Nanoparticle‐Based Wireless Brain–Computer Interface: Underlying Physics and Projected Technology Pathway

Advanced Science, EarlyView.
Magnetoelectric nanoparticles (MENPs) enable fully wireless, minutely invasive neuromodulation, and potentially neural recording, by converting magnetic into electric and, conversely, electric into magnetic fields, respectively, at high spatiotemporal resolution.
Elric Zhang, Max Shotbolt, Mostafa Abdel‐Mottaleb, Shawnus Chen, Victoria Andre, Jieyuan Tian, Jonathan Shulgach, Max Murphy, Brian Noga, Ping Liang, Darcy Griffin, Douglas Weber, Marta Pardo, Salvador Pane, Sakhrat Khizroev   +14 more
wiley   +1 more source

Transmission Engineering as a Route to Subthermal Switching

IEEE Journal of the Electron Devices Society, 2015
The physics of low subthreshold devices is interpreted in terms of a gate-dependent change in their mode-averaged transmission function, in addition to a capacitive shift in their overall mode spectrum.
Avik W. Ghosh
doaj   +1 more source