Results 51 to 60 of about 86,211 (240)

Neuromorphic Electronics for Intelligence Everywhere: Emerging Devices, Flexible Platforms, and Scalable System Architectures

Advanced Materials, EarlyView.
The perspective presents an integrated view of neuromorphic technologies, from device physics to real‐time applicability, while highlighting the necessity of full‐stack co‐optimization. By outlining practical hardware‐level strategies to exploit device behavior and mitigate non‐idealities, it shows pathways for building efficient, scalable, and ...
Kapil Bhardwaj, Roshni Satheesh Babu, Yuxin Xia, Eva Bestelink, Radu Sporea, Nikos Hastas, Ioannis Zeimpekis, Dimitra G. Georgiadou, Sayani Majumdar   +8 more
wiley   +1 more source

Transmission Engineering as a Route to Subthermal Switching

IEEE Journal of the Electron Devices Society, 2015
The physics of low subthreshold devices is interpreted in terms of a gate-dependent change in their mode-averaged transmission function, in addition to a capacitive shift in their overall mode spectrum.
Avik W. Ghosh
doaj   +1 more source

Mechanisms of Temperature‐Dependent Hysteresis in Freestanding BaTiO3/MoS2 Heterostructures [PDF]

Advanced science
Freestanding ferroelectric BaTiO3 membranes are combined with monolayer MoS2 into 2D field‐effect transistors. At room temperature they provide ultrahigh‐κ gating with steep subthreshold swing and minimal hysteresis. Upon cooling, strong ferroelectric switching produces two stable memory states with long retention times.
Pucher T, Mompeán F, Rouco V, León C, Santamaría J, Munuera C, García‐Hernández M, Castellanos‐Gomez A.   +7 more
europepmc   +2 more sources

“Smelltronics”—From Gas to Smell Sensing

Advanced Materials, EarlyView.
The emerging field of smelltronics, encompassing sensing technologies for complex volatile organic compounds, holds significant potential for extracting valuable chemical information. It facilitates the noninvasive, real‐time monitoring of humans, food, and the environment.
Takeshi Ono, Tsunaki Takahashi, Jiangyang Liu, Haruka Honda, Zeng Jing, Wataru Tanaka, Takuro Hosomi, Takeshi Yanagida   +7 more
wiley   +1 more source

Monolithic 3D‐Integrated All‐Solid Ion‐Gated Carbon Nanotube Transistors With Tunable Ionic Conductance for Multi‐Timescale Reservoir Computing

Advanced Materials, EarlyView.
A dual‐timescale reservoir based on monolithically 3D (M3D)‐integrated CNT solid ion‐gated transistors is demonstrated. Tunable ionic dynamics and pulse‐engineered operation enable linear and symmetric synaptic updates. The M3D‐integrated array achieves robust temporal encoding and accurate classification of moving MNIST sequences, highlighting its ...
Haksoon Jung, Hanbin Cho, Yongwoo Lee, Seunghun Baek, Hyeongjun Kim, Yun Goo Ro, Hyunhyub Ko, Joonki Suh, Yong‐Young Noh, Jimin Kwon   +9 more
wiley   +1 more source

Barrier‐Assisted Plasma Doping for Spatially Selective Resistance Engineering in MoS2 Transistors

Advanced Materials, EarlyView.
Barrier‐assisted NH3 plasma doping enables damage‐free, spatially selective carrier modulation in monolayer MoS2 transistors. An ultrathin pV3D3/Al2O3 protective‐dielectric stack acts as a chemical filter that allows NHx radicals to reach the MoS2 surface while blocking plasma damage. This process achieves a high electron concentration of 4.3 × 1013 cm−
Inseong Lee, Joonho Park, Seungsun Yoo, Seunghyun Yu, Mingu Kang, Seohak Park, Min Kyu Lee, Hyeongjin Lim, Dongyoung Kim, Kunwoo Roh, Sejin Kim, Kihyuk Kim, Wonbae Ahn, Kibum Kang, Yong‐Hoon Kim, Sung‐Yool Choi   +15 more
wiley   +1 more source

Simulation of a new Pressure Swing Batch Distillation System [PDF]

, 2008
The operation and performance of a new pressure swing batch distillation configuration is investigated by rigorous simulation calculations. A maximum boiling point azeotrope is separated in a double column batch rectifier. We study the influence of the
Kopasz, A., Modla, Gábor, Lang, P.
core   +1 more source

A Universal van der Waals Tunneling Injector for Monolayer CMOS

Advanced Materials, EarlyView.
A universal van der Waals injector unlocks polarity‐flexible tunneling contacts for monolayer CMOS. SnSe2, an intrinsically degenerate 2D semiconductor, establishes polarity‐specific band alignments with both WSe2 and MoS2 channels, enabling steep switching, high on/off ratios, and a unified route to low‐power 2D logic.
Hanbin Cho, Jing Huang, Seonguk Yang, Subin Im, Sangwoo Park, Jeongin Yeo, Sungyeon Kim, Gilhwan Do, Wenxuan Zhu, Soobeom Shin, Jongwon Lee, Yongjoon Shin, Do‐Sun Lee, Hu Young Jeong, Tae‐Eon Park, Jun Kang, Kyungmin Ko, Joonki Suh   +17 more
wiley   +1 more source

Entrainer selection for pressure swing batch distillation [PDF]

, 2008
The feasibility of the separation of binary homoazeotropes with pressure swing batch distillation by the application of an entrainer is studied. The feasibility studies are based on the assumption of maximal separation and on the analysis of batch ...
Láng, Péter, Modla, Gábor, Kopasz, Árpád   +2 more
core   +1 more source

Numerical Simulations of Gate-Granularity- Induced Subthreshold Characteristics Deterioration of MOSFETs Magnified at Cryogenic Temperatures

IEEE Access
While gate workfunction fluctuation causes the threshold voltage shift of transistors, it leads to off- and on-state current variations with a given supply voltage and circuit performance degradation at room temperatures.
Kuo-Hsing Kao, Zong-Hong Wang, Yu-Chia Pai, Chen-Chi Cheng, Darsen D. Lu, Wen-Jay Lee, Nan-Yow Chen   +6 more
doaj   +1 more source