Results 71 to 80 of about 5,282 (241)
Advanced Electronic Materials, EarlyView.This work electrically characterizes sixteen logic gates built from three‐independent‐gate reconfigurable transistors fabricated on full‐scale 300 mm wafers using the industrial 22 nm fully depleted FDSOI process of GlobalFoundries. Static and time‐resolved measurements confirm correct operation, including a 1‐bit adder and reconfigurable AOI/OAI ...
Juan P. Martinez +12 more
wiley +1 more source
IET Circuits, Devices and Systems, 2023 In this article, a new p+ pocket stacked gate oxide junctionless tunnelling field effect transistor (junction less tunnelling field effect transistor (JLTFET)) which has metal strip in gate oxide layer is proposed for analogue/RF circuit applications ...
Alireza Zirak
doaj +1 more source
Aging and Electrical Stability of DNTT Honey‐Gated OFETs
Advanced Electronic Materials, EarlyView.DNTT honey‐gated organic transistors were fabricated and evaluated to assess short‐ and long‐term stability under electrical stress and aging. Short‐term transfer measurements (five days, 40 sweeps/day) showed minimal parameter shift, while extended measurements revealed gradual degradation over weeks.
Douglas H. Vieira +8 more
wiley +1 more source
On the relation between rf noise and subthreshold swing in InP HEMTs for cryogenic LNAs [PDF]
, 2022 4 - 8 GHz low-noise amplifiers (LNAs) based on InP high electron mobility transistors (InP HEMTs) with different spacer thickness in the InAlAs-InGaAs heterostructure were fabricated and characterized at 5 K.
Li, Junjie +4 more
core
AIP Advances, 2013 RF magnetron sputtered HfInZnO film and atomic layer deposition (ALD) Al2O3 film were employed for thin film transistors (TFTs) as channel layer and gate insulator, respectively.
Jun Li +5 more
doaj +1 more source
Advanced Electronic Materials, EarlyView.ABSTRACT Machine learning and Artificial Intelligence (AI) tasks have stretched traditional hardware to its limits. In‐hardware computation is a novel approach that aims to run complex operations, such as matrix–vector multiplication, directly at the device level for increased efficiency.
Juan P. Martinez +10 more
wiley +1 more source
Atomic threshold-switching enabled MoS2 transistors towards ultralow-power electronics
Nature Communications, 2020 Here, the authors demonstrate an atomic threshold-switching field-effect transistor constructed by integrating a metal filamentary switch with a two-dimensional MoS2 channel, and obtain abrupt steepness in the turn-on characteristics and 4.5 mV/dec ...
Qilin Hua +13 more
doaj +1 more source
Two-dimensional(2D) subthreshold current and subthreshold swing modeling of double-material-gate(DMG) strained-Si(s-Si) on silicon-germanium(SiGe) MOSFETs. [PDF]
, 2014 In this dissertation analysis of double-material-gate (DMG) strained-Si (s-Si) channel on SiGe substrate MOSFET is done in the subthreshold region of operation and hence the behaviour of leakage current and subthreshold swing is studied.
Mukhopadhyay , A K
core
, 2023 This thesis proposes a new line tunneling dominating metal-semiconductor contact-induced SiGe tunnel field-effect transistor with controlled gates(CG-Line iTFET), as well as a line tunneling dominating metal-semiconductor contact-induced SiGe/Si tunnel ...
Weng, Shao-Cheng
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On device architectures, subthreshold swing, and power consumption of the piezoelectric field-effect transistor (π-FET) [PDF]
, 2015 This paper describes the potential of tunable strain in field-effect transistors to boost performance of digital logic. Voltage-controlled strain can be imposed on a semiconductor body by the integration of a piezoelectric material improving transistor ...
Kaleli, Buket +8 more
core +1 more source