Results 71 to 80 of about 86,211 (240)

Atomic threshold-switching enabled MoS2 transistors towards ultralow-power electronics

Nature Communications, 2020
Here, the authors demonstrate an atomic threshold-switching field-effect transistor constructed by integrating a metal filamentary switch with a two-dimensional MoS2 channel, and obtain abrupt steepness in the turn-on characteristics and 4.5 mV/dec ...
Qilin Hua, Guoyun Gao, Chunsheng Jiang, Jinran Yu, Junlu Sun, Taiping Zhang, Bin Gao, Weijun Cheng, Renrong Liang, He Qian, Weiguo Hu, Qijun Sun, Zhong Lin Wang, Huaqiang Wu   +13 more
doaj   +1 more source

Advances and Perspectives in Graphene‐Based Quantum Dots Enabled Neuromorphic Devices

Advanced Science, EarlyView.
Graphene‐based QDs are zero‐dimensional carbon nanomaterials with pronounced quantum confinement and tunable electronic structures. Herein, we summarize their synthesis strategies and functionalization methods, and highlight their functional roles and operating mechanisms in devices, as well as recent advances in neuromorphic electronics. We anticipate
Yulin Zhen, Wei Zeng, Zherui Zhao, JiYu Zhao, Ziyan Huang, Zhuo Chen, Kui Zhou, Guanglong Ding, Su‐Ting Han, Ye Zhou   +9 more
wiley   +1 more source

Bioinspired Ionochromic Neuromorphic Transistors for Robotic Intelligent Perception

Advanced Science, EarlyView.
A bioinspired ionochromic neuromorphic transistor couples synaptic conductance modulation with reversible color change through voltage‐controlled ion doping in P3HT/ion gel, mimicking biological synaptic plasticity, and chameleon‐like color regulation.
Quanxing Yao, Xiaojian Zhu, Runsheng Gao, Qian Jiang, Cui Sun, Yi Du, Xuerong Liu, Lixun Wang, Haolong Li, Yuejun Zhang, Run‐Wei Li   +10 more
wiley   +1 more source

Demonstration of Steep Switching Behavior Based on Band Modulation in WSe₂ Feedback Field-Effect Transistor

Nanomaterials
Feedback field-effect transistors (FBFETs) have been studied to obtain near-zero subthreshold swings at 300 K with a high on/off current ratio ~1010. However, their structural complexity, such as an epitaxy process after an etch process for a Si channel ...
Seung-Mo Kim, Jae Hyeon Jun, Junho Lee, Muhammad Taqi, Hoseong Shin, Sungwon Lee, Haewon Lee, Won Jong Yoo, Byoung Hun Lee   +8 more
doaj   +1 more source

Ferroelectricity of HfZrO₂ in Energy Landscape With Surface Potential Gain for Low-Power Steep-Slope Transistors

IEEE Journal of the Electron Devices Society, 2015
The corresponding energy landscape and surface potential are deduced from the experimental ferroelectricity of HfZrO2 (HZO) for low-power steep-slope transistor applications.
Min Hung Lee, Y.-T. Wei, C. Liu, J.-J. Huang, Ming Tang, Yu-Lun Chueh, K.-Y. Chu, Miin-Jang Chen, Heng-Yuan Lee, Yu-Sheng Chen, Li-Heng Lee, Ming-Jinn Tsai   +11 more
doaj   +1 more source

Stepwise internal potential jumps caused by multiple-domain polarization flips in metal/ferroelectric/metal/paraelectric/metal stack

Nature Communications, 2020
Negative capacitance (NC) effects that could allow steep subthreshold swing (SS) in field-effect transistors (FETs) are still controversially discussed.
Xiuyan Li, Akira Toriumi
doaj   +1 more source

A 3-D analytical physically based model for the subthreshold swing in undoped trigate FinFETs

, 2007
An analytical physically based analysis for undoped FinFET devices in the subthreshold and near-threshold regimes has been developed by solving the 3-D Poisson equation, in which the mobile-charge term was included.
Guitart, Jaume Roig, El Hamid, Hamdy Abd, Flandre, Denis, Iniguez, Benjamin, Kilchytska, Valeria   +4 more
core   +1 more source

Biomechanical characterisation of leg movement during the golf swing following knee surgery [PDF]

, 2012
The forces transmitted through the knee throughout the golf swing have been found to be as high as those associated with running (Colwell et al., 2005) therefore playing golf with a knee that has undergone surgery may place extra stress on the previously
Murray, P, Downey, J, Campbell, J, Kenny, I, Madden, D, Breen, S   +5 more
core   +4 more sources

Selective Polarity Control of Metal Oxide Semiconductors for Complementary Logic Gates

Advanced Science, EarlyView.
A scalable electrochemical doping strategy enables in situ p‐to‐n polarity conversion in tin oxide (SnO) thin films using electrolyte gating. Both the pristine p‐type SnO transistor and the electrochemically converted n‐type SnO2 transistor exhibited noticeable and stable electrical performance.
Dong Hyun Park, Seung Ho Ryu, Min Su Kim, Taek‐Mo Chung, Seong Keun Kim, In‐Hwan Baek, Keun Hyung Lee   +6 more
wiley   +1 more source

Deciphering the Crystallinity‐Dependent Sensitivity of Charge Injection in n‐Channel Organic Transistors: Reliable Characterization and Optimized Performance

Advanced Science, EarlyView.
Precise characterization of n‐type organic semiconductors necessitates decoupling interfacial constraints from intrinsic charge transport. This work reveals that disordered polymers are particularly vulnerable to contact‐limited bottlenecks compared to their crystalline counterparts.
Walid Boukhili, Chan Zhang, Jianeng Ma, Changwoo Yu, Chee Leong Tan, Huabin Sun, Zhihao Yu, Guangan Yang, Xiang Wan, Li Zhu, Yong Xu, Liyang Yu, Ruipeng Li, Seung‐Hoon Lee, Zhuping Fei, Dongyoon Khim   +15 more
wiley   +1 more source