Results 91 to 100 of about 86,211 (240)

A new line tunneling SiGe/Si iTFET with control gate for leakage suppression and subthreshold swing improvement. [PDF]

Discov Nano, 2023
Lin JT, Weng SC.
europepmc   +1 more source

Robust and Compatible Ferroelectric Memories with Polycrystalline TiO2 Channel for 3D Integration

Advanced Electronic Materials, EarlyView.
Robust and monolithic 3D compatible ferroelectric memories are realized using the polycrystalline TiO2 channel‐based FeFET. The review covers physical mechanisms of the TiO2 channel FeFET, quantitative benchmarking, and advanced planar/vertical architectures for monolithic 3D integration based on HfO2‐TiO2 gate stack, offering a roadmap for reliable ...
Xujin Song, Chenxi Yu, Shangze Li, Dijiang Sun, Jiajia Zhang, Haotong Zhu, Xiaomin Xiao, Xionghao Qin, Xiaoyan Liu, Xing Zhang, Jinfeng Kang   +10 more
wiley   +1 more source

A Compendium of Logic Gates Based on Reconfigurable Three‐Independent‐Gate Transistors Realized in FDSOI Hardware

Advanced Electronic Materials, EarlyView.
This work electrically characterizes sixteen logic gates built from three‐independent‐gate reconfigurable transistors fabricated on full‐scale 300 mm wafers using the industrial 22 nm fully depleted FDSOI process of GlobalFoundries. Static and time‐resolved measurements confirm correct operation, including a 1‐bit adder and reconfigurable AOI/OAI ...
Juan P. Martinez, Yuxuan He, Giulio Galderisi, Violetta Sessi, Niladri Bhattacharjee, Peter Baars, Kerstin Poenisch, Annekathrin Zeun, Konstantin Li, Fernando Koch, Binit Syamal, Thomas Mikolajick, Jens Trommer   +12 more
wiley   +1 more source

Analytical models for channel potential, drain current, and subthreshold swing of short-channel triple-gate FinFETs

, 2014
An analytical model for channel potential, subthreshold drain current, and subthreshold swing of the short-channel fin-shaped field-effect transistor (FinFET) is obtained.
Xiang, Ping, Liu, Ran, Hu, Guangxi, Gu, Enyao, Wang, Lingli, Zhou, Xing   +5 more
core  

Efficient In‐Hardware Matrix–Vector Multiplication and Addition Exploiting Bilinearity of Schottky Barrier Transistors Processed on Industrial FDSOI

Advanced Electronic Materials, EarlyView.
ABSTRACT Machine learning and Artificial Intelligence (AI) tasks have stretched traditional hardware to its limits. In‐hardware computation is a novel approach that aims to run complex operations, such as matrix–vector multiplication, directly at the device level for increased efficiency.
Juan P. Martinez, Niladri Bhattacharjee, Yuxuan He, Giulio Galderisi, Brojogopal Sapui, Sara Mannaa, Ian O'Connor, Violetta Sessi, Peter Javorka, Thomas Mikolajick, Jens Trommer   +10 more
wiley   +1 more source

Steep Subthreshold Swing and Enhanced Illumination Stability InGaZnO Thin-Film Transistor by Plasma Oxidation on Silicon Nitride Gate Dielectric. [PDF]

Membranes (Basel), 2021
Liu Y, Liu C, Qin H, Peng C, Lu M, Chen Z, Zhao Y.   +6 more
europepmc   +1 more source

Physics‐Based Compact Modeling of Advanced 3D Nanoscale Vertical NAND Flash Memory

Advanced Electronic Materials, EarlyView.
For advanced 3D NAND flash memory, a unified compact model for SPICE is proposed that spans from the intrinsic unit cell to the full string and captures the electrostatic coupling with adjacent inhibit strings. It can successfully predict read behavior, program/erase dynamics, and interactions between neighboring cells, reflecting array‐level behavior ...
Ilho Myeong, Seonho Shin, Ickhyun Song
wiley   +1 more source

New column configurations for pressure swing batch distillation I. Feasibility Studies [PDF]

, 2007
The feasibility of the pressure swing distillation in different batch column configurations is investigated. The method is based on the assumption of maximal separation. Besides studying the well known batch configurations (rectifier, stripper, middle
Modla, Gábor
core   +1 more source

Investigation of TFETs with Vertical Tunneling Path for Low Average Subthreshold Swing

, 2017
In this paper we analyze the capabilities in terms of average subthreshold swing and on-current of Si0.50Ge0.50/Si heterostructure n-TFETs with vertical tunneling path, utilizing an air bridge design to minimize source-drain leakage.
S. Glass, Strangio, Sebastiano, Sebastiano Strangio, Glass, Stefan, Q.-T. Zhao, von den Driesch, Nils, C. Schulte-Braucks, S. Mantl, Mantl, Siegfried, Zhao, Qing-Tai, D. Buca, Schulte-Braucks, Christian, Rieger, Torsten, N. von den Driesch, S. Strangio, Q. T. Zhao, T. Rieger, Buca, Dan Mihai   +17 more
core   +1 more source

High‐Responsivity and Fast‐Response Organic Phototransistor Based on Dinaphtho[2,3‐b:2′,3′‐f]Thieno[3,2‐b]Thiophene

Advanced Electronic Materials, EarlyView.
Low‐temperature Al/Al2O3/DNTT/Au organic phototransistors fabricated on flexible PEN combine high responsivity to blue light (≈250 A W−1 at 39 nW cm−2) with detectable modulated photoresponse up to 150 kHz, making them promising for ultra‐low‐light sensing and moderate‐speed optical links.
Antonio Caldarelli, Antonio Vettoliere, Paolo Scotto Di Vettimo, Marcello Campajola, Gino Giusi, Vincenzo Izzo, Alberto Aloisio, Ettore Sarnelli   +7 more
wiley   +1 more source