Results 91 to 100 of about 5,282 (241)

A Novel Tunnel FET Design With Stacked Source Configuration for Average Subthreshold Swing Reduction

, 2016
In this paper, a novel heterostacked tunnel FET (HS-TFET) is proposed for steeper average subthreshold swing (SS). Different from conventional TFETs, HS-TFETs owns a stacked source configuration consisting of an upper source layer with a relatively ...
Wu, Chunlei, Zhao, Yang, Wang, Jiaxin, Wang, Yangyuan, Huang, Qianqian, Huang, Ru   +5 more
core   +1 more source

Tandem Neural Network Rapidly Solves Multivalued Inverse Problems: Application to Oxide‐Semiconductor Characterization

Advanced Intelligent Systems, EarlyView.
A tandem neural network directly solves the multivalued inverse problem of extracting semiconductor parameters from transistor measurements. Trained on only 1000 simulations, the network infers six material parameters (e.g., defect states, carrier concentration, mobility) in under 1 ms, demonstrating a broadly applicable framework for semiconductor ...
Masatoshi Kimura, Keisuke Ide, Kuan‐Ju Zhou, Atsushi Shimizu, Takayoshi Katase, Hidenori Hiramatsu, Kei Terayama, Hideo Hosono, Toshio Kamiya   +8 more
wiley   +1 more source

High performance MoS2 TFT using graphene contact first process

AIP Advances, 2017
An ohmic contact of graphene/MoS2 heterostructure is determined by using ultraviolet photoelectron spectroscopy (UPS). Since graphene shows a great potential to replace metal contact, a direct comparison of Cr/Au contact and graphene contact on the MoS2 ...
Chih-Shiang Chang Chien, Hsun-Ming Chang, Wei-Ta Lee, Ming-Ru Tang, Chao-Hsin Wu, Si-Chen Lee   +5 more
doaj   +1 more source

Low‐Dimensional Materials and Van Der Waals Heterostructures for Energy Application: A Comprehensive Review

ENERGY &ENVIRONMENTAL MATERIALS, EarlyView.
Low‐dimensional materials (0D, 1D, and 2D) exhibit unique electronic and physicochemical properties, enabling advanced nanoelectronic and optoelectronic devices. Mixed‐dimensional heterostructures combine these materials to enhance functionality.
Qaisar Alam, Sajjad Ali, Pir Muhammad Ismail, ABM Sharif Hossain   +3 more
wiley   +1 more source

Gate engineering solutions to mitigate short channel effects in a 20 nm MOSFET

e-Prime: Advances in Electrical Engineering, Electronics and Energy
This work presents a promising approach to addressing scaling challenges in advanced MOSFET technology. It proposes a novel MOSFET structure designed to enhance electrical performance by introducing asymmetry in the gate dielectric thickness.
Ahmed S. Al-Jawadi, Mohammad Tariq Yaseen, Qais Thanon Algwari   +2 more
doaj   +1 more source

Gas–Solid Interface‐Assisted Growth of Organic Semiconductor Single Crystals: Dimensions, Structures, Mechanisms, and Applications

ENERGY &ENVIRONMENTAL MATERIALS, EarlyView.
Gas–solid interface‐assisted growth strategies have unlocked precise control over crystal structure, morphology, dimension, and molecular packing. The obtained organic semiconductor single crystals represent the ideal candidates for high‐performance organic optoelectronic devices.
Tingyi Yan, Qing Tian, Jinwen Wang, Ke Jiang, Yage Han, Yuanzhuang Ren, Lingyun Li, Xiujuan Zhang, Jiansheng Jie   +8 more
wiley   +1 more source

Improving Analog Performance and Suppression of Subthreshold Swing using Hetero Junction Less Double Gate Tunnel FETs

, 2017
In this paper, we investigated a new device, Hetero junction less H JL Double Gate Tunnel Field Effect Transistors DGTFET with high k. III V semiconductor material like InAs Si gives excellent performance when InAs uses at source side, because of low ...
Dr. Prabha Shreeraj Nair
core   +1 more source

Material design strategies for flexible n‐type polymer semiconductors

FlexMat, EarlyView.
This Perspective surveys recent progress in flexible n‐type polymer semiconductors, emphasizing the interplay between molecular design and microstructure control. It outlines strategies including backbone and side‐chain engineering, multilevel microstructure optimization, to maintain charge‐transport pathways under mechanical deformation.
Xiao‐Yan Zhang, Yang‐Yang Zhou, Jie‐Yu Wang, Jian Pei, Ze‐Fan Yao   +4 more
wiley   +1 more source

Ferroelectric HfZrO_x FETs on SOI Substrate With Reverse-DIBL (Drain-Induced Barrier Lowering) and NDR (Negative Differential Resistance)

IEEE Journal of the Electron Devices Society, 2018
Ferroelectric-Hf1-xZrxO2 FETs on silicon on insulator (SOI) are modeled and demonstrated with improvement on subthreshold swing (SS) and hysteresis (VT-shift), which is based on the capacitance matching concept.
Kuan-Ting Chen, Siang-Sheng Gu, Zheng-Ying Wang, Chun-Yu Liao, Yu-Chen Chou, Ruo-Chun Hong, Shih-Yao Chen, Hong-Yu Chen, Gao-Yu Siang, Chieh Lo, Pin-Guang Chen, M.-H. Liao, Kai-Shin Li, Shu-Tong Chang, Min-Hung Lee   +14 more
doaj   +1 more source

Analysis of Subthreshold Swing for Oxide Thickness and Doping Distribution in DGMOSFET [PDF]

The Journal of the Korean Institute of Information and Communication Engineering, 2011
In this paper, the relationship of potential and charge distribution in channel for double gate(DG) MOSFET has been derived from Poisson's equation using Gaussian function. The relationship of subthreshold swing and oxide thickness has been investigated according to variables of doping distribution using Gaussian function, i.e.
openaire   +1 more source