Results 91 to 100 of about 2,685 (210)

Meniscus‐guided organic semiconductor single crystals: From fluid dynamics to morphology control and multifunctional applications

FlexMat, EarlyView.
Centered on the multiscale meniscus, this review dissects mass transport in meniscus‐guided coating into parallel and lateral components. By analyzing the balance of multiple factors during crystallization, it establishes a clear morphology‐performance relationship.
Yumeng Wang, Shengnan Chen, Lutong Guo, Lujing Shao, Zhenhua Li, Hao Liu, Yanlin Song, Yali Qiao   +7 more
wiley   +1 more source

Doping Profile Dependent Subthreshold Swing for Double Gate MOSFET

The Journal of the Korean Institute of Information and Communication Engineering, 2011
In this paper, the subthreshold swings for doping distribution in the channel have been analyzed in double gate MOSFET(DGMOSFET). The DGMOSFET is extensively been studying since it can lessen the short channel effects(SCEs) as next -generation nano device.
openaire   +2 more sources

Unlocking Ferroelectricity in Hafnia: From Phase Origins to Device Integration

Interdisciplinary Materials, EarlyView.
This review provides a systematic overview of the critical factors for inducing ferroelectricity in hafnia‐based systems, covering multiple dimensions such as physical origin mechanisms, materials research, integration strategies, and emerging application areas.
Jiangzhen Niu, Xichen Tang, Wenhui Shi, Yunrui Xiu, Huimin Mao, Ye Tao, Xiaoning Zhao, Ya Lin, Zhongqiang Wang, Haiyang Xu, Yichun Liu   +10 more
wiley   +1 more source

Two‐Dimensional Layered Oxides and the Two‐Dimensionalization of Bulk Oxides for Post‐Moore Information Devices

Information &Functional Materials, EarlyView.
This review systematically summarizes two‐dimensional layered and nonlayered oxides, focusing on their synthesis, properties, and post‐Moore applications in transistors, gate dielectrics, optoelectronics, and ferroelectric/magnetic devices. It also discusses challenges including scalable growth and interface engineering, along with future industrial ...
Xinjie Hou, Yanchang Zhou, Yushan Zhu, Xiao Zhang, Ruiqing Cheng, Jun He   +5 more
wiley   +1 more source

Effects of Charge Trapping at the MoS₂-SiO₂ Interface on the Stability of Subthreshold Swing of MoS₂ Field Effect Transistors. [PDF]

Materials (Basel), 2020
Huang X, Yao Y, Peng S, Zhang D, Shi J, Jin Z.   +5 more
europepmc   +1 more source

Ferroelectricity and Ferroionic Dynamics in Two‐Dimensional CuInP2S6

Information &Functional Materials, EarlyView.
The coupled dynamics of ferroelectric polarization and Cu‐ion migration endow CuInP2S6 with unique ferroionic functionalities. This review connects structure, switching mechanisms, and device applications to provide a unified perspective on two‐dimensional ferroionic materials.
Shangsheng Li, Shiyu Wang, Xiongfeng Wang, Qinglin Du, Ruochen Shangguan, Guoqiang Xi, Lin Wang, Wugang Liao   +7 more
wiley   +1 more source

Nanowire Tunnel FET with Simultaneously Reduced Subthermionic Subthreshold Swing and Off-Current due to Negative Capacitance and Voltage Pinning Effects. [PDF]

Nano Lett, 2020
Saeidi A, Rosca T, Memisevic E, Stolichnov I, Cavalieri M, Wernersson LE, Ionescu AM.   +6 more
europepmc   +1 more source

Cyclothymic‐hypersensitive temperament in early adolescence: Longitudinal measurement invariance and associations with psychopathology over time

JCPP Advances, EarlyView.
Abstract Background Cyclothymic‐Hypersensitive Temperament (CHT) is characterised by mood instability, interpersonal hypersensitivity, and emotional hyperreactivity, traits frequently observed in general population as well as clinical settings but often eluding strict diagnostic classifications.
Anna Pezzella, Pietro Buono, Nadia Marani, Luisa Almerico, Alessandra Carta, Maria Nobile, Carmela Bravaccio, Gennaro Catone, Vincenzo Paolo Senese, Simone Pisano   +9 more
wiley   +1 more source

Ultimate-scaled one-dimensional transistors: Surpassing the subthreshold swing limit

Computational Materials Today
The continuous miniaturization of field-effect transistors (FETs) has propelled microprocessors to unprecedented levels of integration. However, further scaling encounters a critical trade-off between integration density and power efficiency.
Weiming Zhang, Jian Zhou, Bing Wang, Yuqi Sun, Zhimei Sun   +4 more
doaj   +1 more source

Wet‐Transferred MoS2 on Passivated InP: A Van der Waals Heterostructure for Advanced Optoelectronic Applications

physica status solidi (RRL) – Rapid Research Letters, Volume 19, Issue 5, May 2025.
This study presents a photodetector based on atomically thin MoS2 on an InP substrate, forming an n‐MoS2/p‐InP type‐II staggered heterojunction. The device exhibits excellent rectifying properties with an ideality factor of 1.57 and achieves a peak photoresponsivity of 960 mA W−1, while MoS2 provides stable passivation for InP. III–V semiconductors are
Dong Hwi Choi, Jae Hyeop Lee, Min Su Kim, Jaeseo Park, Jun Oh Kim, Teli Aviraj Mahadev, Beknalkar Sonali Ajay, Hong Hyuk Kim, Jae Cheol Shin   +8 more
wiley   +1 more source