Results 111 to 120 of about 2,685 (210)

Unified Analytic Framework for Thickness‐Dependent Transport and Trap‐State Modulation in Ultrathin W:In2O3 Field‐Effect Transistors

open access: yesSmall Structures
3D integration demands ultrathin oxide transistors that combine strong gate control, high mobility, steep subthreshold swing, and normally off operation within back‐end‐of‐line (BEOL) thermal budgets below 400°C.
Mochamad Januar   +3 more
doaj   +1 more source

Early identification of vascular cognitive impairment from a multimodal perspective: a combined diagnosis from targeted cognitive assessments, imaging biomarkers, and molecular fluid biomarkers to ecological behavioral characteristics

open access: yesAlzheimer's &Dementia, Volume 22, Issue 8, August 2026.
Abstract Vascular cognitive impairment (VCI), the second leading cause of dementia, is characterized by heterogeneous pathophysiology and a potentially reversible early phase, underscoring the need for timely identification. This review synthesizes advances across four complementary domains – targeted cognitive assessments, imaging biomarkers ...
Wenqi Song   +8 more
wiley   +1 more source

The Evolution of Semiconductor Devices: From Transistors to Quantum and Neuromorphic Computing

open access: yesphysica status solidi (RRL) – Rapid Research Letters, Volume 20, Issue 8, August 2026.
This review presents the evolution of semiconductor devices from BJTs to fin field‐effect transistors (FinFETs), nanowire, and carbon nanotube transistors. It highlights emerging materials, including SiC and GaN, and examines neuromorphic and quantum computing, industry applications, performance benchmarks, challenges, and future directions.
Manoharan Subramanian   +6 more
wiley   +1 more source

Oxygen Vacancy Passivation by Compensation Technique to Address the Conflict Between Mobility and Threshold Voltage of Heterojunction Oxide Transistors

open access: yesSmall Structures, Volume 7, Issue 8, August 2026.
This work presents a facile surface passivation strategy for heterojunction transistors. Using an NH4Cl solution, it resolves the threshold voltage and mobility conflict in IZO/ZnO heterojunction transistors. High field‐effect mobility is preserved by passivating surface oxygen vacancies on ZnO, where OH groups form stable Zn–OH species at room ...
Qinyuan Wang   +6 more
wiley   +1 more source

Towards an Integrated Staging Model for Bipolar Disorders: An International Society for Bipolar Disorders (ISBD) Staging Task Force Consensus Report

open access: yesBipolar Disorders, Volume 28, Issue 5, August 2026.
ABSTRACT Objectives Three clinical staging models for bipolar disorder (BD) have been published, each with a different but complementary approach and focus. The International Society for Bipolar Disorders Staging Task Force aimed to integrate these models into one comprehensive three‐dimensional staging model, separately rating bipolar spectrum ...
Ralph Kupka   +27 more
wiley   +1 more source

Establishing a Specialty Bipolar Clinic: The National Network of Depression Centers Consensus Recommendations

open access: yesBipolar Disorders, Volume 28, Issue 5, August 2026.
ABSTRACT Objective To provide expert recommendations for the development of a specialty bipolar clinic that promotes best clinical practices for the delivery of safe and effective care. Methods Members of the National Network of Depression Centers (NNDC) Bipolar Clinics Work Group met in a series of 1‐h monthly video calls over 18 months to discuss all
Christopher D. Schneck   +23 more
wiley   +1 more source

Substance Use and Suicidality in People at Ultra‐High‐Risk of Psychosis: A Systematic Review

open access: yesEarly Intervention in Psychiatry, Volume 20, Issue 8, August 2026.
ABSTRACT Aim Substance use and suicidality are prevalent among individuals at ultra‐high‐risk (UHR) of psychosis, yet their relationship remains unclear. This systematic review synthesises evidence on the relationship between substance use and suicidality—comprising suicidal ideation, self‐harm, suicide attempts, and suicide deaths—in the UHR ...
Alicia Tan Jia Hui, Lee D. Mulligan
wiley   +1 more source

Theoretical Limit of MOSFET Subthreshold Swing at Sub-Kelvin Temperatures

open access: yesIEEE Electron Device Letters
Fully conductive band tails cause the subthreshold swing to saturate at temperatures above 1 K. However, recent measurements indicate that below 1 K, the subthreshold swing in certain MOSFET structures resumes a linear scaling with temperature. Following this ultra-steep behavior, a new type of plateau has been measured below 1 K.
openaire   +2 more sources

Circular-Gate Nanoscale Air Channel Transistors: Achieving ultralow Subthreshold Swing and Working Voltage. [PDF]

open access: yesAdv Sci (Weinh)
Zhao H   +10 more
europepmc   +1 more source

Home - About - Disclaimer - Privacy