Results 111 to 120 of about 86,211 (240)

Doping Profile Dependent Subthreshold Swing for Double Gate MOSFET

The Journal of the Korean Institute of Information and Communication Engineering, 2011
In this paper, the subthreshold swings for doping distribution in the channel have been analyzed in double gate MOSFET(DGMOSFET). The DGMOSFET is extensively been studying since it can lessen the short channel effects(SCEs) as next -generation nano device.
openaire   +2 more sources

Analytical Model for Subthreshold Swing and Threshold Voltage of Surrounding Gate Metal–Oxide–Semiconductor Field-Effect Transistors

, 2011
We investigate analytically the metal–oxide–semiconductor field-effect transistor (MOSFET) with a surrounding gate (SG). We develop and present an analytical model for subthreshold swing and threshold voltage.
Shuyan Hu, Tingao Tang, Guangxi Hu, Guanghui Mei, Ran Liu, Jinglun Gu   +5 more
core   +1 more source

Subthreshold Time‐Mode All‐Digital DLL With Built‐In Linearization

International Journal of Circuit Theory and Applications, EarlyView.
This paper presents a subthreshold time‐mode all‐digital delay‐locked loop (DLL) for low‐frequency clock generation. The large and tunable delay of the DLL is obtained using a static inverter delay line whose supply voltage is in the vicinity of 100 mV and adjustable by varying supply voltage. Phase error is processed by a time‐mode proportional block (
Fei Yuan, Wenhao Wu, Yushi Zhou
wiley   +1 more source

Low‐Dimensional Materials and Van Der Waals Heterostructures for Energy Application: A Comprehensive Review

ENERGY &ENVIRONMENTAL MATERIALS, EarlyView.
Low‐dimensional materials (0D, 1D, and 2D) exhibit unique electronic and physicochemical properties, enabling advanced nanoelectronic and optoelectronic devices. Mixed‐dimensional heterostructures combine these materials to enhance functionality.
Qaisar Alam, Sajjad Ali, Pir Muhammad Ismail, ABM Sharif Hossain   +3 more
wiley   +1 more source

Gas–Solid Interface‐Assisted Growth of Organic Semiconductor Single Crystals: Dimensions, Structures, Mechanisms, and Applications

ENERGY &ENVIRONMENTAL MATERIALS, EarlyView.
Gas–solid interface‐assisted growth strategies have unlocked precise control over crystal structure, morphology, dimension, and molecular packing. The obtained organic semiconductor single crystals represent the ideal candidates for high‐performance organic optoelectronic devices.
Tingyi Yan, Qing Tian, Jinwen Wang, Ke Jiang, Yage Han, Yuanzhuang Ren, Lingyun Li, Xiujuan Zhang, Jiansheng Jie   +8 more
wiley   +1 more source

Effects of Charge Trapping at the MoS₂-SiO₂ Interface on the Stability of Subthreshold Swing of MoS₂ Field Effect Transistors. [PDF]

Materials (Basel), 2020
Huang X, Yao Y, Peng S, Zhang D, Shi J, Jin Z.   +5 more
europepmc   +1 more source

Material design strategies for flexible n‐type polymer semiconductors

FlexMat, EarlyView.
This Perspective surveys recent progress in flexible n‐type polymer semiconductors, emphasizing the interplay between molecular design and microstructure control. It outlines strategies including backbone and side‐chain engineering, multilevel microstructure optimization, to maintain charge‐transport pathways under mechanical deformation.
Xiao‐Yan Zhang, Yang‐Yang Zhou, Jie‐Yu Wang, Jian Pei, Ze‐Fan Yao   +4 more
wiley   +1 more source

Ultimate-scaled one-dimensional transistors: Surpassing the subthreshold swing limit

Computational Materials Today
The continuous miniaturization of field-effect transistors (FETs) has propelled microprocessors to unprecedented levels of integration. However, further scaling encounters a critical trade-off between integration density and power efficiency.
Weiming Zhang, Jian Zhou, Bing Wang, Yuqi Sun, Zhimei Sun   +4 more
doaj   +1 more source

Nanowire Tunnel FET with Simultaneously Reduced Subthermionic Subthreshold Swing and Off-Current due to Negative Capacitance and Voltage Pinning Effects. [PDF]

Nano Lett, 2020
Saeidi A, Rosca T, Memisevic E, Stolichnov I, Cavalieri M, Wernersson LE, Ionescu AM.   +6 more
europepmc   +1 more source

Laser‐assisted in situ fabrication of atomically thin Ga2O3 films for dielectric applications

FlexMat, EarlyView.
A confinement template‐assisted squeeze method, in conjunction with laser‐assisted in situ oxidation, facilitates fabrication of centimeter‐scale and atomically thin gallium oxide films from liquid gallium under room temperature conditions. This low‐damage approach avoids thermal degradation of sensitive materials and supports high‐performance field ...
Erzhuo Zhang, Guangyu Yang, Qiwei Sun, Jing Liu, Han Wang, Junran Zhang, Junlei Zhao, Lin Wang, Mengyuan Hua, Xiaolong Chen   +9 more
wiley   +1 more source