Results 111 to 120 of about 5,282 (241)

Wet‐Transferred MoS2 on Passivated InP: A Van der Waals Heterostructure for Advanced Optoelectronic Applications

physica status solidi (RRL) – Rapid Research Letters, Volume 19, Issue 5, May 2025.
This study presents a photodetector based on atomically thin MoS2 on an InP substrate, forming an n‐MoS2/p‐InP type‐II staggered heterojunction. The device exhibits excellent rectifying properties with an ideality factor of 1.57 and achieves a peak photoresponsivity of 960 mA W−1, while MoS2 provides stable passivation for InP. III–V semiconductors are
Dong Hwi Choi, Jae Hyeop Lee, Min Su Kim, Jaeseo Park, Jun Oh Kim, Teli Aviraj Mahadev, Beknalkar Sonali Ajay, Hong Hyuk Kim, Jae Cheol Shin   +8 more
wiley   +1 more source

Advances in Gate Dielectrics for 2D Electronics

physica status solidi (RRL) – Rapid Research Letters, EarlyView.
This review discusses advanced gate dielectric integration for 2D electronic devices, including layered and nonlayered dielectric materials, while highlighting strategies such as seed‐assisted ALD, transfer methods, and in situ oxidation. By focusing on interface engineering and materials innovation, new routes for scalable, high‐performance 2D ...
Moon‐Chul Jung, Jiwoo Kim, Gwan‐Hyoung Lee   +2 more
wiley   +1 more source

Thin Fluoride Insulators for Improved 2D Transistors: From Deposition Methods to Recent Applications

physica status solidi (RRL) – Rapid Research Letters, EarlyView.
2D materials hold significant promise for next‐generation electronic and optoelectronic devices, but suitable gate dielectrics are still a challenge. Fluoride insulators, offering inert, dangling‐bond‐free surfaces, have recently emerged as strong candidates. This review covers recent publications on high‐quality fluoride thin‐film deposition and their
Behzad Dadashnia, Saeed Rasouli, Walter M. Weber, Daniele Nazzari   +3 more
wiley   +1 more source

Line-Tunneling iTFET with Overlapping Gate-on-Source and Drain Schottky Contact and SiGe-Pocket for Steep Subthreshold Swing and High ON-Current

, 2023
The current semiconductor technology node is constantly evolving, and scaling faces many challenges, such as the need to consider increasingly low power budgets and difficulties in controlling doping concentrations to ideal levels. These factors have led
Lin, Kuan-Pin
core  

Opportunities for 2D‐Material‐Based Multifunctional Devices and Systems in Bioinspired Neural Networks

Small, EarlyView.
Bio‐inspired computing offers a route to highly energy‐efficient artificial intelligence. The unique physical properties of two‐dimensional (2D) materials can further enhance such computing approaches. This perspective highlights recent developments in 2D materials‐based neuromorphic devices and discusses future opportunities for integrating such novel
Jin Feng Leong, Maheswari Sivan, Jieming Pan, Zihang Fang, Jianan Li, Zefeng Xu, Shi Zhao, Quanzhen Wan, Evgeny Zamburg, Aaron Voon‐Yew Thean   +9 more
wiley   +1 more source

Influence of Carrier Confinement on the Subthreshold Swing of Multigate SOI MOSFETs

, 2008
The minimum energy of the first conduction subband varies with gate voltage in trigate SOI MOSFETs in subthreshold operation. In an inversion-mode device, the energy level of the lowest subband increases when the electron concentration increases, while ...
Yan, Ran, 4th EuroSOI Workshop 2008, Colinge, Jean-Pierre, Afzalian, Aryan, Lederer, Dimitri, Lee, Chi-Woo   +5 more
core  

Projected performance of experimental InAs/GaAsSb/GaSb TFET as millimeter-wave detector

, 2017
Based on measurements of a vertical nanowire InAs/GaAsSb/GaSb tunneling field-effect transistor (TFET) that exhibited minimum subthreshold swing of 48 mV/dec and a record high I60 of 0.31 μA/μm, a SPICE model has been generated to allow an experimentally-
Memisevic, E., Seabaugh, A.,, J. Zhang, Fay, P., P. Fay, L. E. Wernersson, Ytterdal, T.,, Wernersson, L. E., T. Ytterdal, C. Alessandri, Zhang, J.,, Wernersson, L. E.,, Fay, P.,, Alessandri, C., A. Seabaugh, Ytterdal, T., Alessandri, C.,, Seabaugh, A., Memisevic, E.,, Lund University., Zhang, J., E. Memisevic   +21 more
core   +1 more source

Laser‐Direct Printed 2D Material‐Based Heterostructure for the Fabrication of Electronic Devices

Small, EarlyView.
The Digital Laser‐Induced Forward Transfer (LIFT) approach is employed to pattern and stack 2D materials with micrometer‐scale precision. PdSe2 and MoSe2 are assembled into vertical p–n junctions, with graphene serving as a transparent electrode. The resulting laser‐transferred heterostructures exhibit high material quality and stable rectifying ...
Ilias Cheliotis, Filimon Zacharatos, Avraham Twitto, Michal Poplinger, Adi Levi, Amaia Pesquera, Amaia Zurutuza, Iakovos Kritikos, Stefania Skorda, Alexandros El Sachat, Yuri Mikhlin, Doron Naveh, Ioanna Zergioti   +12 more
wiley   +1 more source

Gate Field‐Induced Dynamic Schottky Barrier Height Reduction in Bilayer MoS2 for Sub‐60 mV/dec Schottky Barrier FETs

Advanced Electronic Materials
Bilayer MoS2 exhibits bandgap narrowing under a vertical electric field due to inversion symmetry breaking, with the extent of reduction scaling proportionally with field strength. Leveraging this intrinsic property, this study investigates its impact on
Gyeong Min Seo, Jeong Wook Kim, Byoung Don Kong   +2 more
doaj   +1 more source

Subthreshold Slope of Long-channel, Accumulation-mode P-channel Soi Mosfets

, 1994
An analytical model for the subthreshold slope of the accumulation-mode p-channeI SOI MOSFET is developed. The exact solution of the equations reveals that the subthreshold swing is slightly larger (by a few percent) than that of enhancement (inversion ...
Flandre, Denis, Colinge, Jean-Pierre, Vandewiele, Fernand   +2 more
core   +1 more source