Results 121 to 130 of about 5,282 (241)
Small, EarlyView.We present a van der Waals FeNC‐FET that simultaneously achieves sub‐60 mV/dec steep switching and non‐volatile memory within a single transistor. A CIPS/h‐BN/α‐In2Se3 bi‐ferroelectric gate stack enables a stabilized negative‐capacitance state in FE1 while maintaining the bistable polarization of FE2.
Sangmin Lee +5 more
wiley +1 more source
Subthreshold characteristics of ballistic electron emission spectra
, 2012 We report upon a comprehensive investigation of the subthreshold characteristics of the ballistic electron emission microscopy (BEEM) current in ballistic electron emission spectroscopy.
K. E. J. Goh +9 more
core +1 more source
British Journal of Clinical Psychology, EarlyView.Abstract Objectives To synthesize current evidence and provide clinically actionable recommendations for integrating menstrual cycle‐related processes—particularly hormone sensitivity, Premenstrual Dysphoric Disorder (PMDD) and Premenstrual Exacerbation (PME)—into psychological assessment, formulation and treatment.
Ellen R. Lambert +2 more
wiley +1 more source
, 2016 The subthreshold swing (S) of tunneling field-effect transistors (TFETs) has been modeled by using the Landauer formula, Wentzel-Kramers-Brillouin (WKB) approximation, Kane's two band k . p model and Fermi-Dirac statistics.
Huh, In, Choi, Woo Young
core +1 more source
The Journal of Physiology, EarlyView.Abstract figure legend The capillary–mitochondria–ion channel (CMIC) axis scales structural resources to match functional workload. (Left) In settings of restricted energetic capacity (e.g. cortical neurons), sparse capillary networks and modest mitochondrial pools set a lower energetic ceiling, sufficient to support phasic, low‐workload excitability. (
L. Fernando Santana, Scott Earley
wiley +1 more source
Charge trapping mechanism leading to sub-60-mV/decade-Swing FETs
, 2017 In this work, we present a novel method to reduce the subthreshold swing of field-effect transistors below 60 mV/dec. Through modeling, we directly relate trap charge movement between the gate electrode and the gate dielectric to subthreshold swing ...
Luisa Petti (1895668) +8 more
core +2 more sources
Reproducibility and variability in commercial SiC MOSFETs at deep-cryogenic temperatures
Materials for Quantum TechnologySilicon carbide is a wide-bandgap semiconductor with an emerging complementary metal-oxide-semiconductor (CMOS) technology platform and it is widely deployed in high power and harsh environment electronics.
Megan Powell +4 more
doaj +1 more source
A Low‐Power Cryogenic Low‐Noise Amplifier for the Next‐Generation Quantum Computers
physica status solidi (a), Volume 223, Issue 11, 10 June 2026.Next generation of quantum computers calls for reduced dc power dissipation of the cryogenic low‐noise amplifier (LNA) applied in reading out the superconducting qubits. This article reports on processing and evaluation of a 100‐nm gate length indium phosphide high electron mobility transistor (InP HEMT) technology used in the design of such LNAs.
Nelson Rebelo +4 more
wiley +1 more source
, 2018 While two-dimensional (2D) van der Waals (vdW) layered materials are promising channel materials for wearable electronics and energy-efficient field-effect transistors (FETs), large hysteresis and large subthreshold swing induced by either dangling bonds
Sang Hyup Lee +5 more
core
Doping Profile Dependent Subthreshold Swing for Double Gate MOSFET
The Journal of the Korean Institute of Information and Communication Engineering, 2011 In this paper, the subthreshold swings for doping distribution in the channel have been analyzed in double gate MOSFET(DGMOSFET). The DGMOSFET is extensively been studying since it can lessen the short channel effects(SCEs) as next -generation nano device.
openaire +2 more sources