Results 121 to 130 of about 86,211 (240)

Meniscus‐guided organic semiconductor single crystals: From fluid dynamics to morphology control and multifunctional applications

FlexMat, EarlyView.
Centered on the multiscale meniscus, this review dissects mass transport in meniscus‐guided coating into parallel and lateral components. By analyzing the balance of multiple factors during crystallization, it establishes a clear morphology‐performance relationship.
Yumeng Wang, Shengnan Chen, Lutong Guo, Lujing Shao, Zhenhua Li, Hao Liu, Yanlin Song, Yali Qiao   +7 more
wiley   +1 more source

HamFET: A High-Performance Subthermionic Transistor Through Incorporating Hybrid Switching Mechanism

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Field-effect transistors (FETs) switched by quantum band-to-band tunneling (BTBT) mechanism, rather than conventional thermionic emission mechanism, are emerging as an exciting device candidate for future ultralow-power electronics due to their ...
Qianqian Huang, Shaodi Xu, Ru Huang
doaj   +1 more source

Challenges and strategies toward next‐generation high‐performance flexible and printable thin‐film transistors

FlexMat, EarlyView.
This review explores recent progress in printing strategies such as inkjet, screen, liquid metal, and roll to roll (R2R) methods and their roles in fabricating flexible TFTs. Device architectures are examined with emphasis on printed components and their influence on performance and stability.
Xia Zhao, Zhongqing Zeng, Zeyu Hu, Jaekyun Kim, Jidong Jin, Wensi Cai, Zhigang Zang   +6 more
wiley   +1 more source

Two‐Dimensional Layered Oxides and the Two‐Dimensionalization of Bulk Oxides for Post‐Moore Information Devices

Information &Functional Materials, EarlyView.
This review systematically summarizes two‐dimensional layered and nonlayered oxides, focusing on their synthesis, properties, and post‐Moore applications in transistors, gate dielectrics, optoelectronics, and ferroelectric/magnetic devices. It also discusses challenges including scalable growth and interface engineering, along with future industrial ...
Xinjie Hou, Yanchang Zhou, Yushan Zhu, Xiao Zhang, Ruiqing Cheng, Jun He   +5 more
wiley   +1 more source

Impact of Hysteresis Curve on Subthreshold Swing in Ferroelectric FET

Vietnam Journal of Science and Technology
The changes in Subthreshold Swing (SS) were observed for changes in remanent polarization Pr and coercive field Ec, which determine the characteristics of the P-E hysteresis curve of ferroelectric in Ferrolectric FET (FeFET). A multilayer structure of Metal-Ferroelectric-Metal-Insulator-Semiconductor (MFMIS) was used for the junctionless double gate ...
openaire   +1 more source

Semi-analytical Model for the Estimation of the Subthreshold Swing in Dirac-Source FETs

A 2D analytical model for the potential profile in the semiconductor channel of two-dimensional (2D) Dirac-Source (DS) FETs is worked out and compared with a rigorous numerical solution of Poisson’s equation. This analytical solution holds validity in weak inversion and enables a precise assessment of the subthreshold swing (SS) under the constraint of
Ugolini T., Baccarani G., Gnani E.
openaire   +1 more source

Ferroelectricity and Ferroionic Dynamics in Two‐Dimensional CuInP2S6

Information &Functional Materials, EarlyView.
The coupled dynamics of ferroelectric polarization and Cu‐ion migration endow CuInP2S6 with unique ferroionic functionalities. This review connects structure, switching mechanisms, and device applications to provide a unified perspective on two‐dimensional ferroionic materials.
Shangsheng Li, Shiyu Wang, Xiongfeng Wang, Qinglin Du, Ruochen Shangguan, Guoqiang Xi, Lin Wang, Wugang Liao   +7 more
wiley   +1 more source

Depletion‐Mode a‐IGZO TFTs AM‐OLED Pixel Circuit for VTH Shift Compensation and Capacitance Deviation Tolerance

Journal of the Society for Information Display, EarlyView.
A 6T‐2C AM‐OLED pixel circuit using a‐IGZO TFTs is proposed to compensate for driving‐TFT threshold‐voltage shifts, including depletion‐mode operation, while tolerating storage‐capacitance variation. Applying VDATA to the common plate of two series capacitors reduces coupling sensitivity, and a four‐phase sequence provides deterministic reset ...
Hyunwoo Kim, Sanghyun Park, Woongkyu Lee, Young‐Ha Hwang, Juntaek Oh, Hojin Lee   +5 more
wiley   +1 more source

High‐Pressure Chemical Vapor Deposition Growth of Transition Metal Dichalcogenides With Minimized Sulfur Vacancies

National Materials, EarlyView.
High‐pressure chemical vapor deposition at 3800 torr elevates the sulfur chemical potential during MoS2 growth, suppressing sulfur‐vacancy formation. This thermodynamic control yields MoS2 with defect densities comparable to those of exfoliated crystals, enhanced crystallinity, uniform defect distribution, and improved electronic transport properties ...
Takmo Jeong, Bumsub Song, Bong Gyu Shin, Jae Woo Kim, Sang‐Hyeok Yang, Young‐Min Kim, Ki Kang Kim, Young Hee Lee, Seok Joon Yun   +8 more
wiley   +1 more source

Wet‐Transferred MoS2 on Passivated InP: A Van der Waals Heterostructure for Advanced Optoelectronic Applications

physica status solidi (RRL) – Rapid Research Letters, Volume 19, Issue 5, May 2025.
This study presents a photodetector based on atomically thin MoS2 on an InP substrate, forming an n‐MoS2/p‐InP type‐II staggered heterojunction. The device exhibits excellent rectifying properties with an ideality factor of 1.57 and achieves a peak photoresponsivity of 960 mA W−1, while MoS2 provides stable passivation for InP. III–V semiconductors are
Dong Hwi Choi, Jae Hyeop Lee, Min Su Kim, Jaeseo Park, Jun Oh Kim, Teli Aviraj Mahadev, Beknalkar Sonali Ajay, Hong Hyuk Kim, Jae Cheol Shin   +8 more
wiley   +1 more source