Results 141 to 150 of about 5,282 (241)

HamFET: A High-Performance Subthermionic Transistor Through Incorporating Hybrid Switching Mechanism

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Field-effect transistors (FETs) switched by quantum band-to-band tunneling (BTBT) mechanism, rather than conventional thermionic emission mechanism, are emerging as an exciting device candidate for future ultralow-power electronics due to their ...
Qianqian Huang, Shaodi Xu, Ru Huang
doaj   +1 more source

Charge Transport in Thin‐Film Transistors Based on Liquid‐Crystalline Phthalocyanines

ChemNanoMat, Volume 12, Issue 6, June 2026.
These results highlight how mesomorphic order, metal coordination, and environmental conditions collectively govern charge transport in liquid‐crystalline phthalocyanines, offering design guidelines for their use as self‐assembled semiconductors in organic electronics.
Lindiomar Borges de Avila Junior, Zuchong Yang, Ilknur Hatice Eryilmaz, Lilian Skokan, Leonardo Furini, Andreas Ruediger, Harald Bock, Ivan H. Bechtold, Emanuele Orgiu   +8 more
wiley   +1 more source

Impact of Hysteresis Curve on Subthreshold Swing in Ferroelectric FET

Vietnam Journal of Science and Technology
The changes in Subthreshold Swing (SS) were observed for changes in remanent polarization Pr and coercive field Ec, which determine the characteristics of the P-E hysteresis curve of ferroelectric in Ferrolectric FET (FeFET). A multilayer structure of Metal-Ferroelectric-Metal-Insulator-Semiconductor (MFMIS) was used for the junctionless double gate ...
openaire   +1 more source

Impact of the Unified Protocol on Attenuated Psychotic Symptoms, Cognitive Biases and Cognitive Insight in Patients at Ultra High Risk (UHR) for Psychosis: Secondary Results of a Pilot Randomized Controlled Trial

Journal of Clinical Psychology, Volume 82, Issue 6, Page 915-926, June 2026.
ABSTRACT Background and Hypothesis Ultra high risk (UHR) for psychosis can have different clinical trajectories but the remission rates are only 51.9% after 3 years of follow‐up. Deficits in metacognition are associated with severity of symptoms and poor response to treatment.
Trinidad Peláez, Raquel López‐Carrilero, Victoria Espinosa, Sol Balsells, Paolo Fusar‐Poli, Susana Ochoa, Jorge Osma   +6 more
wiley   +1 more source

Semi-analytical Model for the Estimation of the Subthreshold Swing in Dirac-Source FETs

A 2D analytical model for the potential profile in the semiconductor channel of two-dimensional (2D) Dirac-Source (DS) FETs is worked out and compared with a rigorous numerical solution of Poisson’s equation. This analytical solution holds validity in weak inversion and enables a precise assessment of the subthreshold swing (SS) under the constraint of
Ugolini T., Baccarani G., Gnani E.
openaire   +1 more source

DIBL and subthreshold swing effect on carbon nanotube field effect transistor

, 2015
Silicon based devices are getting problem with the limitation of channel length for fabrication of the miniature size. Short channel effects are creating such problem of the silicon devices. Thus CNT is a smart choice for replacement with the silicon.
Farhana, Soheli, Alam, A. H. M. Zahirul, Khan, Sheroz   +2 more
core  

Theoretical Limit of Low Temperature Subthreshold Swing in Field-Effect Transistors

This letter reports a temperature-dependent limit for the subthreshold swing in MOSFETs that deviates from the Boltzmann limit at deep-cryogenic temperatures.
Jazaeri, Farzan, Beckers, Arnout, Enz, Christian   +2 more
core   +1 more source

Unified Analytic Framework for Thickness‐Dependent Transport and Trap‐State Modulation in Ultrathin W:In2O3 Field‐Effect Transistors

Small Structures
3D integration demands ultrathin oxide transistors that combine strong gate control, high mobility, steep subthreshold swing, and normally off operation within back‐end‐of‐line (BEOL) thermal budgets below 400°C.
Mochamad Januar, Zhao‐Feng Luo, Kou‐Chen Liu, Min‐Hung Lee   +3 more
doaj   +1 more source

Theoretical Limit of MOSFET Subthreshold Swing at Sub-Kelvin Temperatures

IEEE Electron Device Letters
Fully conductive band tails cause the subthreshold swing to saturate at temperatures above 1 K. However, recent measurements indicate that below 1 K, the subthreshold swing in certain MOSFET structures resumes a linear scaling with temperature. Following this ultra-steep behavior, a new type of plateau has been measured below 1 K.
openaire   +2 more sources

Nano-biosensors with subthreshold swing tunnel field effect transistor: A cutting-edge review

A thorough investigation into the development and performance assessment of biosensors that utilize Tunnel Field Effect Transistors (TFETs), showcasing a departure from conventional bio-sensing approaches is carried out.
G. Lakshmi Priya, M. Poorna Sundari
core   +1 more source