Advanced Functional Materials, Volume 36, Issue 45, 5 June 2026.A large number of MoS2 flakes were screened to obtain high‐quality flakes based on optical intensities in R, G, and B channel images. The flakes were classified from Level 1 to 6 based on optical intensities in the R, G, and B channel images. Low‐quality flake exhibited wrinkled, folded, or overlapped features, while high‐quality displayed a neat ...
Sanghyun Lee +11 more
wiley +1 more source
Effects of Charge Trapping at the MoS2-SiO2 Interface on the Stability of Subthreshold Swing of MoS2 Field Effect Transistors. [PDF]
Materials (Basel), 2020 Huang X +5 more
europepmc +1 more source
Achieving Near-Ideal Subthreshold Swing in P-Type WSe2 Field-Effect Transistors
Publisher Copyright: © 2024 The Authors. Advanced Electronic Materials published by Wiley-VCH GmbH. | openaire: EC/H2020/872049/EU//IPN-Bio | openaire: EC/H2020/834742/EU//ATOPThe pursuit of near-ideal subthreshold swing (SS) ≈ 60 mV dec−1 is a primary ...
Choi, Hyungyu +8 more
core +1 more source
Evolution of Materials and Device Stacks for HfO2‐Based Ferroelectric Memories
Advanced Materials Interfaces, Volume 13, Issue 11, 9 June 2026.This review summarizes engineering strategies for HfO2 based ferroelectric memories with focus on FeCAP and FeFET structures. It describes how dopant design, stress effects, and interface engineering improve the bulk ferroelectric response. It further discusses how channel engineering supports reliable memory characteristics and scalable integration ...
Eunjin Kim, Jiyong Woo
wiley +1 more source
Ultimate-scaled one-dimensional transistors: Surpassing the subthreshold swing limit
Computational Materials TodayThe continuous miniaturization of field-effect transistors (FETs) has propelled microprocessors to unprecedented levels of integration. However, further scaling encounters a critical trade-off between integration density and power efficiency.
Weiming Zhang +4 more
doaj +1 more source
Utilizing reverse short-channel effect for optimal subthreshold circuit design
, 2007 The impact of the reverse short-channel effect (RSCE) on device current is stronger in the subthreshold region due to reduced drain-induced barrier lowering (DIBL) and the exponential
Kim, Tony Tae-Hyoung +3 more
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Hydrogen‐State‐Engineered Oxide Semiconductor Channels Enabling Reliable 2T0C DRAM Operation
Advanced Electronic Materials, Volume 12, Issue 11, 8 June 2026.We introduce a three‐step hydrogen annealing method for oxide semiconductor devices that modulates hydrogen incorporation and its passivation behavior. Consequently, interface traps are suppressed, whereas the mobility, reliability, and data retention of the IGO‐based 2T0C DRAM are simultaneously improved.
Jun‐Yeoub Lee +5 more
wiley +1 more source
Nanowire Tunnel FET with Simultaneously Reduced Subthermionic Subthreshold Swing and Off-Current due to Negative Capacitance and Voltage Pinning Effects. [PDF]
Nano Lett, 2020 Saeidi A +6 more
europepmc +1 more source
, 2016 Fully Depleted Silicon-On-Insulator is a promising technology but there were limitations in it due to the ultra thin Silicon body which increases the series resistance. So research was done to find new devices to overcome this limitation. One such device
Prasada, Kiranmayi
core
Solution‐Processed Tunable Spectral Response Photodetectors Enabled by Acidochromic Polymers
Advanced Electronic Materials, Volume 12, Issue 11, 8 June 2026.Tunable spectral response photodetectors have been fabricated by using acidochromic polymers in photodiode and phototransistor geometries with organic/inorganic semiconductor heterojunctions. The spectral response of the photodetector has been tuned from the visible to the NIR region by using vapor‐phase trifluoroacetic acid (TFA) in a reversible way ...
Pijush Kanti Aich +5 more
wiley +1 more source