Results 161 to 170 of about 2,685 (210)

Natural, small molecule aliphatics (cholesterol and hexadecyl palmitate) as dielectrics for low-voltage organic field effect transistors.

Mater Adv
Irimia CV, Schimanofsky C, Ban B, Yumusak C, Ciganek M, Sedlacek P, Krajcovic J, D'Orsi R, Operamolla A, Petritz A, Matura K, Stadlober B, Kanbur Y, Salinas Y, Brüggemann O, Teichert C, Sariciftci NS, Irimia-Vladu M.   +17 more
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Modeling the subthreshold swing in MOSFET's

IEEE Electron Device Letters, 1997
This letter reports on the bias-dependence of the inverse subthreshold slope or subthreshold swing in MOSFET's. It is shown by calculations and verified by experiments that the subthreshold swing varies with gate bias and exhibits a global minimum.
L Deferm
exaly   +2 more sources

Low-subthreshold-swing tunnel transistors

IEEE Electron Device Letters, 2006
A formula is derived, which shows that the subthreshold swing of field-effect interband tunnel transistors is not limited to 60 mV/dec as in the MOSFET. This formula is consistent with two recent reports of interband tunnel transistors, which show lower than 60-mV/dec subthreshold swings and provides two simple design principles for configuring these ...
Alan Seabaugh
exaly   +2 more sources

Study of the subthreshold swing of a pMOSFET as a dosimetric parameter

Sensors and Actuators A: Physical, 2012
Abstract A study of the degradation of the subthreshold swing in a general-purpose pMOSFET is carried out to evaluate its use as a dosimetric parameter. Its reliability in terms of sensitivity, linearity, and reproducibility is experimentally tested and compared with the threshold voltage shift under gamma rays from a 60Co source up to 56 Gy, typical
J Banqueri, M A Carvajal, A J Palma
exaly   +2 more sources

Modeling of the subthreshold current and subthreshold swing of fully depleted short-channel Si–SOI-MESFETs

Solid-State Electronics, 2009
Abstract A model for the subthreshold current and subthreshold swing of fully depleted short-channel Si–SOI-MESFETs is presented in the paper. The subthreshold current of the device is modeled empirically by an exponential function of gate–source and drain–source voltages.
Pramod Kumar Tiwari, Satyabrata Jit
exaly   +2 more sources

Quasi-3D subthreshold current and subthreshold swing models of dual-metal quadruple-gate (DMQG) MOSFETs

Journal of Computational Electronics, 2015
Quasi-3D models of subthreshold current and subthreshold swing for Dual-Metal Quadruple-Gate (DMQG) MOSFETs are presented in this paper. Equivalent number of gates (ENGs) concept has been utilized to calculate the effective natural length $$\lambda _{DMQG}$$?DMQG of DMQG MOSFETs in spite of solving three-dimensional (3D) Poisson's equation.
Pramod Kumar Tiwari, Sarvesh Dubey, Visweswara Rao Samoju   +2 more
exaly   +2 more sources

Transistor Subthreshold Swing Lowered by 2-D Heterostructures

IEEE Transactions on Electron Devices, 2021
Steep-slope transistors are required for low-power electronic applications. However, the strategy to lower the subthreshold swing (SS) remains elusive. Here, we present a method based on altering capacitance constitution to lower the SS of 2-D transistors close to thermionic limit (60 mV/dec).
Fan Wu, He Tian, Zhaoyi Yan, Yang Shen, Jie Ren, Yi Yang, Tian-Ling Ren   +6 more
openaire   +1 more source

Experimental Study on the Subthreshold Swing of Silicon Nanowire Transistors

Journal of Nanoscience and Nanotechnology, 2010
SOI based wrap-gate silicon nanowire FETs are fabricated through electron beam lithography and wet etching. Dry thermal oxidation is used to further reduce the patterned fins cross section and transfer them into nanowires. Silicon nanowire FETs with different nanowire widths varying from 60 nm to 200 nm are fabricated and the number of the nanowires ...
Yanbo, Zhang, Ying, Xiong, Xiang, Yang, Ying, Wang, Weihua, Han, Fuhua, Yang   +5 more
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Analytical model to estimate the subthreshold swing of SOI FinFET

2013 IEEE 20th International Conference on Electronics, Circuits, and Systems (ICECS), 2013
This paper presents an analytical model to approximate the subthreshold swing of a SOI-FinFET device. The model considers only the capacitive coupling inside the structure of the device and does not take the doping attenuation of the channel into consideration because the channel of SOI-FinFET is either undoped or lightly doped.
Azzedin D. Es-Sakhi, Masud H. Chowdhury
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Steep Subthreshold Swing Originating from Gate Delay

2019 Device Research Conference (DRC), 2019
Complex gate dielectrics are being widely explored to provide voltage amplification leading to steep subthreshold swing (SS) in transistors [1]. Here we show that hysteretic steep SS can arise simply from the introduction of a series resistance in the gate of a metal-oxide-semiconductor field-effect transistor (MOSFET), i.e. as a dynamic effect.
Paolo Paletti, Mina Asghari Heidarlou, Karla González-Serrano, Cristobal Alessandri, Alan C. Seabaugh   +4 more
openaire   +1 more source