Results 181 to 190 of about 2,685 (210)

Junction technologies for devices with steep subthreshold swing

2009 International Workshop on Junction Technology, 2009
In this paper, we examine the Impact Ionization Field-Effect Transistor (I-FET or I-MOS) as well as the Tunnel Field-Effect Transistor (T-FET), paying attention to junction and material design requirements based on device physics considerations. Device performance parameters and electrical characteristics of I-MOS and T-FET devices are dependent on ...
openaire   +1 more source

Modeling of MOSFET subthreshold swing mismatch with BSIM4 Model

2016 IEEE International Conference on Semiconductor Electronics (ICSE), 2016
In this paper, we propose a methodology to model the MOSFET subthreshold swing, S mismatch by using BSIM4 model. The 0.18µm CMOS technology silicon data show two trends in the swing mismatch plot. For large-size devices (larger than a critical area A C ), the subthreshold swing behaves in a linear trend with smaller slope compared to small-size devices.
Xing Er Bee, Mohamad Marzuki Bin Mohd Fauzi, Philip Beow Yew Tan   +2 more
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Analytical modeling of subthreshold current and subthreshold swing of Gaussian-doped strained-Si-on-insulator MOSFETs

Journal of Semiconductors, 2014
This paper presents the analytical modeling of subthreshold current and subthreshold swing of short- channel fully-depleted (FD) strained-Si-on-insulator (SSOI) MOSFETs having vertical Gaussian-like doping pro- file in the channel. The subthreshold current and subthreshold swing have been derived using the parabolic approx- imation method.
Gopal Rawat, Sanjay Kumar, Ekta Goel, Mirgender Kumar, Sarvesh Dubey, S. Jit   +5 more
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InP MOSFETs Exhibiting Record 70 mV/dec Subthreshold Swing

2019 Device Research Conference (DRC), 2019
Low InP/dielectric interface trap density $D_{\mathrm{it}}$ will enable low subthreshold swings $(SS)$ in mm-wave MOSFETs [1] using InGaAs/InP composite channels [2] for increased breakdown and in tunnel FETs (TFETs) [3] using InAs/InP heterojunctions [4] for increased tunneling probability. Reducing $D_{\mathrm{it}}$ at the etched InP mesa edges
Hsin-Ying Tseng, Yihao Fang, Shibo Zhong, Mark J. W. Rodwell   +3 more
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Analytical modeling of subthreshold current and subthreshold swing of an underlap DGMOSFET with tied–independent gate and symmetric–asymmetric options

Microelectronics Journal, 2011
Novel analytical models for subthreshold current and subthreshold slope of a generic underlap DGMOSFET are proposed. The proposed models are validated with published models, experimental data along with numerical simulation results. The reasonably good agreement shows the accuracy of the proposed model.
Ramesh Vaddi, R. P. Agarwal, Sudeb Dasgupta   +2 more
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Analytical modeling of subthreshold swing in undoped trigate SOI MOSFETs

Journal of Computational Electronics, 2016
A new analytical model for the subthreshold swing of nanoscale undoped trigate silicon-on-insulator metal---oxide---semiconductor field-effect transistors (MOSFETs) is proposed, based on the channel potential distribution and physical conduction path concept.
Hamdam Ghanatian, Seyed Ebrahim Hosseini
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Realizing steep subthreshold swing with Impact Ionization Transistors

2009 International Symposium on VLSI Technology, Systems, and Applications, 2009
Recent developments in Impact Ionization Transistors (I-MOS) will be discussed here, including strained impact ionization transistors realized on the nanowire or multiple-gate device architecture. I-MOS devices achieve excellent subthreshold swings well below 5 mV/decade at room temperature.
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Supersteep retrograde doping in ferroelectric MOSFETs for sub-60mV/dec subthreshold swing

2016 46th European Solid-State Device Research Conference (ESSDERC), 2016
We present a simulation study addressing the physics and design of ferroelectric MOSFETs and, in particular, we argue that a retrograde channel doping profile may help obtain a subthreshold swing well below 60mV/dec. Our analysis suggests that ferroelectric MOSFETs should be operated at gate voltages smaller than those triggering the hysteretic ...
ROLLO, TOMMASO, ESSENI, David
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Basic Science and Development of Subthreshold Swing Technology

2023
P. Suveetha Dhanaselvam, D. Sriram Kumar, B. Karthikeyan, P. Vanitha   +3 more
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Transistors with steep subthreshold swing for low power electronics

IEEE Transactions on Electron Devices, 2014
  +5 more sources