Results 181 to 190 of about 86,211 (240)

Oxide induced degradation in MoS₂ field-effect transistors. [PDF]

NPJ 2D Mater Appl
Ducry F, Van Troeye B, Dossena M, Luisier M, Pourtois G, Afzalian A.   +5 more
europepmc   +1 more source

Fabrication and Electrical Characterization of MgZnO/ZTO Thin-Film Transistors. [PDF]

Nanomaterials (Basel)
Hao Y, Wang C, Guo L, Sun Y, Jin M, Xu L, Huang Y, Zong Y, Xu X, Zeng J.   +9 more
europepmc   +1 more source

Characterization and understanding of subthreshold swing of Si MOSFETs at cryogenic temperatures

, 2023
openaire   +1 more source

Performance analysis of electrostatic and transport characteristics of underlap-engineered gate-all-around carbon nanotube (CNT) FETs for nanoelectronics circuitry applications. [PDF]

Sci Rep
Bose SJ, Dhar RS, Hussein MI, Awwad F.
europepmc   +1 more source

Study of dielectric modulated dual source triple gate TFET for biosensing applications. [PDF]

Discov Nano
Cui G, Xu H.
europepmc   +1 more source

Performance Analysis and Optimization of an InGaAs/GaAsSb Heterojunction Dopingless Tunnel FET with a Heterogate Dielectric. [PDF]

Micromachines (Basel)
Huang J, Liu H, Chen S, Wang S, Chong C, Liu C.   +5 more
europepmc   +1 more source

Large-area two-dimensional MoO₃ as a high-κ dielectric for van der Waals integration. [PDF]

Nat Commun
Hu Z, Zhao B, Fu Q, Guan H, Liu X, Yang T, Feng Z, Liu X, Xia W, Sun X, Zhang Z, Wang Y, Chen Y, Yang Y, Feng S, Tang X, Zhang Y, Chen J, Zhang X, Li T, Li Z, Liu Y, Yang M, Luo Y, Wu J, Liu H, Ni Z, Liu Y, Lu J.   +28 more
europepmc   +1 more source

All-2D vertical metal-semiconductor field-effect transistor with sub-10 nm channel and contact lengths. [PDF]

Nat Commun
Zhang Y, Jia X, Chen J, Li M, Li Y, Dai L.   +5 more
europepmc   +1 more source

Benchmarking of Ultrascaled Monolayer Halogenated Borophene Transistors: A Comprehensive First-Principles Quantum Transport Study. [PDF]

ACS Omega
Zhang S, Guo Z, Shen Q, Du S, Xie H, Yin WY.   +5 more
europepmc   +1 more source