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Steep Subthreshold Swing Originating from Gate Delay
2019 Device Research Conference (DRC), 2019Complex gate dielectrics are being widely explored to provide voltage amplification leading to steep subthreshold swing (SS) in transistors [1]. Here we show that hysteretic steep SS can arise simply from the introduction of a series resistance in the gate of a metal-oxide-semiconductor field-effect transistor (MOSFET), i.e. as a dynamic effect.
Paolo Paletti +4 more
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Germanium Junctionless MOSFET with Steep Subthreshold Swing
ECS Transactions, 2015In this work, we analyze the occurrence of steep subthreshold swing (S-swing) in Double Gate (DG) Germanium (Ge) Junctionless (JL) nMOS transistors. The performance of Ge JL transistor is compared with that of Si based JL MOSFETs. Our results show that it is possible to achieve steep S-swing < 1 mV/decade along with a steep current transition of ...
Manish Gupta, Abhinav Kranti
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A new model of subthreshold swing for sub-100nm MOSFETs
Microelectronics Reliability, 2008Abstract A novel subthreshold swing model that linearly depends on the drain bias voltage (Vds) and negative-exponentially depends on the effective channel length (Leff) is proposed for LDD MOSFETs on 90 nm CMOS technology. It simplifies the description of the effective gate overdrive voltage (Vgte) and yields a single-equation I–V compact model to ...
Lin-An Yang, Chun-Li Yu, Yue Hao
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Impact of calibrated band-tails on the subthreshold swing of pocketed TFETs
2018 76th Device Research Conference (DRC), 2018The tunnel field-effect transistor (TFET) is one of the prime steep-slope device candidates to be employed in future ultra-low power logic applications [1], [2], and can achieve sub-60 mV/dec subthreshold swings (SS) using quantum mechanical (QM) band-to-band tunneling (BTBT).
Jasper Bizindavyi +3 more
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Energy-efficient transistors: suppressing the subthreshold swing below the physical limit
Materials Horizons, 2021We review the physics, design, and optimization of four steep-slope transistors and demonstrate their potential and drawbacks.
Yongbiao Zhai +3 more
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Analytical Model of Subthreshold Swing in Triangular-Shaped FinFET
2019 Devices for Integrated Circuit (DevIC), 2019FinFET, a quasi-planar device has gained tremendous importance in the semiconductor industry because it has the ability to suppress all the short-channel effects. The silicon fin of FinFET can be of different shapes-rectangular, trapezoidal, triangular, convex, concave etc.
Subham Banerjee, Buddhadev Pradhan
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Determination of Ultrathin Oxide Thickness by Subthreshold Swing
Japanese Journal of Applied Physics, 2002Thickness determination of ultrathin oxide by the subthreshold swing has bee developed. From the experimental result, oxide thickness in the range of 3.0–5.3 nm exhibits a linear dependence on the subthreshold swing. We found that this dependence is also valid for oxide grown in N2O or O2.
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A simple subthreshold swing model for short channel MOSFETs
Solid-State Electronics, 2001Abstract A new approach to calculate the subthreshold swing of short channel bulk and silicon-on-insulator metal oxide semiconductor field effect transistors is presented. The procedure utilizes a channel-potential expression appropriate for submicron dimensions. The final result is similar to that used for long channels except for a factor λ which
A. Godoy +4 more
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An analytical model for the subthreshold swing of double-gate MOSFETs
2010 International Workshop on Junction Technology Extended Abstracts, 2010A model for the Symmetric Double-Gate (SDG) n-MOSFET is presented. Poisson equation is solved analytically and channel potential is obtained. The analytical expression for subthreshold swing is achieved. Model results are compared with Medici simulations, good agreement is observed. The subthreshold swing of an SDG MOSFET will be improved by increasing
Zhihao Ding +5 more
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Junction technologies for devices with steep subthreshold swing
2009 International Workshop on Junction Technology, 2009In this paper, we examine the Impact Ionization Field-Effect Transistor (I-FET or I-MOS) as well as the Tunnel Field-Effect Transistor (T-FET), paying attention to junction and material design requirements based on device physics considerations. Device performance parameters and electrical characteristics of I-MOS and T-FET devices are dependent on ...
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