Results 201 to 210 of about 5,282 (241)
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Short-channel effects on MOSFET subthreshold swing
Solid-State Electronics, 1995Abstract It is shown both experimentally and via MINIMOS simulation that the subthreshold swing S = ∂V G ∂ log 10 I D in a MOSFET may decrease significantly as gate length LG is reduced before increasing catastrophically when LG becomes so short that punchthrough current flows.
N.G. Tarr +4 more
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Germanium Junctionless MOSFET with Steep Subthreshold Swing
ECS Transactions, 2015In this work, we analyze the occurrence of steep subthreshold swing (S-swing) in Double Gate (DG) Germanium (Ge) Junctionless (JL) nMOS transistors. The performance of Ge JL transistor is compared with that of Si based JL MOSFETs. Our results show that it is possible to achieve steep S-swing < 1 mV/decade along with a steep current transition of ...
Manish Gupta, Abhinav Kranti
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A new model of subthreshold swing for sub-100nm MOSFETs
Microelectronics Reliability, 2008Abstract A novel subthreshold swing model that linearly depends on the drain bias voltage (Vds) and negative-exponentially depends on the effective channel length (Leff) is proposed for LDD MOSFETs on 90 nm CMOS technology. It simplifies the description of the effective gate overdrive voltage (Vgte) and yields a single-equation I–V compact model to ...
Lin-An Yang, Chun-Li Yu, Yue Hao
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Energy-efficient transistors: suppressing the subthreshold swing below the physical limit
Materials Horizons, 2021We review the physics, design, and optimization of four steep-slope transistors and demonstrate their potential and drawbacks.
Yongbiao Zhai +3 more
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Impact of calibrated band-tails on the subthreshold swing of pocketed TFETs
2018 76th Device Research Conference (DRC), 2018The tunnel field-effect transistor (TFET) is one of the prime steep-slope device candidates to be employed in future ultra-low power logic applications [1], [2], and can achieve sub-60 mV/dec subthreshold swings (SS) using quantum mechanical (QM) band-to-band tunneling (BTBT).
Jasper Bizindavyi +3 more
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Solid-State Electronics, 2009
Abstract A model for the subthreshold current and subthreshold swing of fully depleted short-channel Si–SOI-MESFETs is presented in the paper. The subthreshold current of the device is modeled empirically by an exponential function of gate–source and drain–source voltages.
Satyabrata Jit, Pramod Kumar Tiwari
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Abstract A model for the subthreshold current and subthreshold swing of fully depleted short-channel Si–SOI-MESFETs is presented in the paper. The subthreshold current of the device is modeled empirically by an exponential function of gate–source and drain–source voltages.
Satyabrata Jit, Pramod Kumar Tiwari
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A simple subthreshold swing model for short channel MOSFETs
Solid-State Electronics, 2001Abstract A new approach to calculate the subthreshold swing of short channel bulk and silicon-on-insulator metal oxide semiconductor field effect transistors is presented. The procedure utilizes a channel-potential expression appropriate for submicron dimensions. The final result is similar to that used for long channels except for a factor λ which
A. Godoy +4 more
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An analytical model for the subthreshold swing of double-gate MOSFETs
2010 International Workshop on Junction Technology Extended Abstracts, 2010A model for the Symmetric Double-Gate (SDG) n-MOSFET is presented. Poisson equation is solved analytically and channel potential is obtained. The analytical expression for subthreshold swing is achieved. Model results are compared with Medici simulations, good agreement is observed. The subthreshold swing of an SDG MOSFET will be improved by increasing
Zhihao Ding +5 more
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Determination of Ultrathin Oxide Thickness by Subthreshold Swing
Japanese Journal of Applied Physics, 2002Thickness determination of ultrathin oxide by the subthreshold swing has bee developed. From the experimental result, oxide thickness in the range of 3.0–5.3 nm exhibits a linear dependence on the subthreshold swing. We found that this dependence is also valid for oxide grown in N2O or O2.
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Analytical Model of Subthreshold Swing in Triangular-Shaped FinFET
2019 Devices for Integrated Circuit (DevIC), 2019FinFET, a quasi-planar device has gained tremendous importance in the semiconductor industry because it has the ability to suppress all the short-channel effects. The silicon fin of FinFET can be of different shapes-rectangular, trapezoidal, triangular, convex, concave etc.
Subham Banerjee, Buddhadev Pradhan
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